DC1281G [DYNEX]

Gunn Diode, 8GHz Min, 12GHz Max, 0.1W P(O), Gallium Arsenide, Continuous Wave,;
DC1281G
型号: DC1281G
厂家: Dynex Semiconductor    Dynex Semiconductor
描述:

Gunn Diode, 8GHz Min, 12GHz Max, 0.1W P(O), Gallium Arsenide, Continuous Wave,

连续波 二极管
文件: 总4页 (文件大小:105K)
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DC1281H

Gunn Diode, 6.2GHz Min, 10.9GHz Max, 0.2W P(O), Continuous Wave,

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0 MICROSEMI

DC1281H

Gunn Diode, 8GHz Min, 12GHz Max, 0.2W P(O), Gallium Arsenide, Continuous Wave,

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0 DYNEX

DC1281J

Gunn Diode, 8GHz Min, 12GHz Max, 0.3W P(O), Gallium Arsenide, Continuous Wave,

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0 DYNEX

DC1282F

Gunn Diode, 13GHz Min, 19GHz Max, 0.05W P(O), Continuous Wave,

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0 MICROSEMI

DC1282F

Gunn Diode, 12GHz Min, 18GHz Max, 0.05W P(O), Gallium Arsenide, Continuous Wave,

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0 DYNEX

DC1282G

Gunn Diode, 13GHz Min, 19GHz Max, 0.1W P(O), Continuous Wave,

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0 MICROSEMI

DC1282G

Gunn Diode, 12GHz Min, 18GHz Max, 0.1W P(O), Gallium Arsenide, Continuous Wave,

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0 DYNEX

DC1282H

Gunn Diode, 13GHz Min, 19GHz Max, 0.2W P(O), Continuous Wave,

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0 MICROSEMI

DC1282H

Gunn Diode, 12GHz Min, 18GHz Max, 0.2W P(O), Gallium Arsenide, Continuous Wave,

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0 DYNEX

DC1283F

Gunn Diode, 4GHz Min, 8GHz Max, 0.05W P(O), Gallium Arsenide, Continuous Wave,

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0 DYNEX

DC1283G

Gunn Diode, 1GHz Min, 2GHz Max, 0.1W P(O), Continuous Wave,

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0 MICROSEMI

DC1283G

Gunn Diode, 4GHz Min, 8GHz Max, 0.1W P(O), Gallium Arsenide, Continuous Wave,

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0 DYNEX

DC1283H

Gunn Diode, 0.5GHz Min, 1GHz Max, 0.2W P(O), Continuous Wave,

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0 MICROSEMI

DC1283H

Gunn Diode, 4GHz Min, 8GHz Max, 0.2W P(O), Gallium Arsenide, Continuous Wave,

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0 DYNEX

DC12KV

High Voltage Ceramic Capacitors (over 10kV)

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10 MURATA