KDB32S 概述
Ideally Suited for Automatic Assembly
KDB32S 数据手册
通过下载KDB32S数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载KDB32S THRU KDB325S
SCHOTTKY
BRIDGE RECTIFIER
3.0
SINGLE PHASE
AMP SURFACE MOUNT
Features
High current capacity,low VF
·
·
·
DB-S
0.043(1.1)
0.035(0.9)
Low Power Loss,High Efficiency
Ideally Suited for Automatic Assembly
For Use in Low Voltage Application
Plastic Case Material has UL Flammability
Classification Rating 94V-0
0.311(7.9)
0.291(7.4)
·
·
- +
~ ~
0.402(10.2)
0.378(
)
9.6
Mechanical Data
·Case: DB-S, molded plastic
·Terminals: plated leads solderable per
MIL-STD-202, Method 208
0.329(8.35)
(
)
7.95
0.313
0.098(2.50)
0.083(2.10)
·Polarity: as marked on case
Mounting position: Any
·
·Marking: type number
0.205(5.2)
0.197(5.0)
·Lead Free: For RoHS / Lead Free Version
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 ambient temperature unless otherwise specified.
℃
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
KDB KDB KDB KDB KDB KDB KDB KDB KDB KDB KDB
SYMBOL
UNITS
V
TYPE NUMBER
32S 33S 34S 345S 35S 36S 38S 310S 315S320S 325S
VRRM
VRWM
VDC
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
20 30 40 45 50
14 21 28 31 35
60 80 100 150 200 250
RMS Reverse Voltage
VRMS
42 56 70 105 140 175
3.0
V
A
IO
Average Rectified Output Current (Note 1)@TA=90
℃
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
80
A
0.55
0.1
10
0.7
0.85
0.9
0.05
5
0.92
Forward Voltage per element @IF=3.0A
VFM
IR
V
Peak Reverse Current
@TA=25
℃
mA
pF
At Rated DC Blocking Voltage @TA=100
℃
Typical Junction Capacitance per leg
Typical Thermal Resistance per leg
CJ
RθJA
28
75
20
(Note 2)
/W
℃
RθJL
Operating and Storage Temperature Range
TJ,TSTG
-55to+150
℃
Note:1. Mounted on glass epoxy PC board with 1.3mm2 solder pad.
2.Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
version:01
1 of 2
www.dyelec.com
KDB32S THRU KDB325S
Fig. 2 Typical Forward Characteristics (per leg)
Fig. 1 Output Current Derating Curve
20
10
3.0
2.5
2
5
1.9
1
TJ=25 C
PULSE WIDTH=300 µs
1%DUTY CYCLE
1
KDB32S-KDB345S
0.1
KDB35S-KDB36S
KDB38S-KDB310S
KDB315S-KDB320S
KDB325S
0.5
0
Resistive or Inductive Load
0.01
0.2
0.5
0.7
0.9
1.1 1.2
0
40
80
120
160
TA, AMBIENT TEMPERATURE (°C)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 3 Maximum Peak Forward Surge Current (per leg)
g ypical Reverse Characteristics (per element)
Fi . 4 T
1,000
120
100
10
1
80
TJ=100 C
TJ=25 C
40
0.1
TA = 25°C
Single Half Sine-Wave
Pulse Width =8.3ms
(JEDEC Method)
0.01
0
20
40
60
80
100
0
1.0
10
NUMBER OF CYCLES AT 60 Hz
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
2 of 2
version:01
www.dyelec.com
KDB32S 相关器件
型号 | 制造商 | 描述 | 价格 | 文档 |
KDB3632 | KEXIN | N-Channel PowerTrench MOSFET | 获取价格 | |
KDB3632 | TYSEMI | rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A UIS Capability (Single Pulse and Repetitive Pulse) | 获取价格 | |
KDB3632(FDB3632) | KEXIN | N-Channel MOSFET | 获取价格 | |
KDB3652 | KEXIN | N-Channel PowerTrench MOSFET | 获取价格 | |
KDB3652 | TYSEMI | rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A Qg(tot) = 41nC (Typ.), VGS = 10V | 获取价格 | |
KDB3652(FDB3652) | KEXIN | N-Channel MOSFET | 获取价格 | |
KDB3672 | KEXIN | N-Channel PowerTrench MOSFET | 获取价格 | |
KDB3672 | TYSEMI | rDS(ON) =24m (Typ.), VGS = 10V, ID =44A Qg(tot) = 24nC (Typ.), VGS = 10V | 获取价格 | |
KDB3672(FDB3672) | KEXIN | N-Channel MOSFET | 获取价格 | |
KDB3682 | KEXIN | N-Channel PowerTrench MOSFET | 获取价格 |
KDB32S 相关文章
- 2024-09-20
- 5
- 2024-09-20
- 8
- 2024-09-20
- 8
- 2024-09-20
- 6