ER101AL [DSK]
ULTRA FAST RECTIFIERS;型号: | ER101AL |
厂家: | Diode Semiconductor Korea |
描述: | ULTRA FAST RECTIFIERS |
文件: | 总2页 (文件大小:263K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Diode Semiconductor Korea
ER100L--- ER106L
VOLTAGE RANGE: 50 --- 600 V
CURRENT: 1.0 A
ULTRA FAST RECTIFIERS
FEATURES
Low cost
A - 405
Diffusde junction
Ultra fast switching for high efficiency
Low reverse leakage current
Low forward voltage drop
High current capability
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC A--405,molded plastic
Polarity: Color band denotes cathode
Weight: 0.008 ounces,0.23 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.
ER
100L
ER
ER
ER
102L 103L
ER
ER
ER
UNITS
101L 101AL
106L
104L
Maximumrecurrent peakreverse voltage
Max imum RMS v oltage
50
35
50
100
70
150
105
150
200
140
200
300
210
300
400
280
400
600
420
600
V
V
V
VRRM
VRMS
VDC
100
Max imum DC bloc king v oltage
Maximumaverage forward rectified current
1.0
A
IF(AV)
9.5mmlead length,
Peak forw ard surge current
8.3ms single half-sine-wave
@T =75
A
IFSM
30.0
A
V
superimposed on rated load @T =125
J
Maximuminstantaneous forw ard voltage
@1.0A
0.95
1.25
1.7
VF
Maximumreverse current
@T =25
5.0
A
A
IR
at rated DCblocking voltage @T =100
150.0
A
Maximum reverse recovery time (Note1)
35
17
ns
trr
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
pF
C
J
50
R JA
/ W
θ
- 55 ----- + 150
- 55 ----- + 150
Operating junction temperature range
T
J
Storage temperature range
TSTG
NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3.Thermal resistance junction to ambient
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Diode Semiconductor Korea
ER100L--- ER106L
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
10
N 1.
50
N 1.
tr r
+0.5A
D.U.T.
(-)
0
(+)
PULSE
50VDC
(approx)
(-)
GENERATOR
(NOTE2)
-0.25A
OSCILLOSCOPE
(NOTE 1)
1
(-)
NONIN-
DUCTIVE
-1.0A
1 c m
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF.
SET TIME BASE FOR 5 ns/cm
JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50
.
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
FIG.3 -- FORWARD DERATING CURVE
10
z
ER100S-ER102S
1.0
1.0
ER103S-ER104S
0.1
0.5
ER106S
Single Phase
Half Wave 60H
Resistive or
Z
0.01
Inductive Load
0.375"(95mm)Lead Length
TJ = 25
0
0
2 5
5 0
7 5
1 00 1 25 1 50 175
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
AMBIENT TEMPERATURE,
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
FIG.5 -- PEAK FORWARD SURGE CURRENT
30
100
TJ = 25
25
20
8.3ms Single Half
Sine-Wave
f = 1.0MHz
Vsig = 50mVp-p
15
10
10
5
0
1
0.1
0
1
5
20
50 100
1
10
100
REVERSE VOLTAGE,VOLTS
NUMBER OF CYCLES AT 60Hz
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