DDB-JJS-K1 [DOMINANT]
LED GaN; LED的GaN
| 型号： | DDB-JJS-K1 |
| 厂家： | 
DOMINANT SEMICONDUCTORS |
| 描述： | LED GaN |
| 文件： | 总8页 (文件大小：177K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DOMINANT Semiconductors
DomiLED GaN - DDx-JJx-I1
•
•
•
•
•
•
High brightness surface mount LED.
Based on GaN technology.
120° viewing angle.
Small package outline (LxWxH) of 2.8 x 3.2 x 1.8 mm.
Qualified according to JEDEC moisture sensitivity Level 2.
Compatible to both IR reflow soldering and TTW soldering.
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DomiLED GaN DDx-xJx - Catalogue-v3.doc
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DOMINANT Semiconductors
Part Ordering Number
Chip Technology / Viewing Luminous Intensity @ If = 10mA
Color
angle
Iv (mcd )
DDB-JJS-KL2-1-I1
GaN /
120
7.2 … 18.0
7.2 … 9.0
•
•
•
•
DDB-JJS-K1
DDB-JJS-K2
DDB-JJS-L1
DDB-JJS-L2
Blue, 466 nm
9.0 … 11.2
11.2 … 14.0
14.0 … 18.0
DDW-JJD-MN1-1-I1
GaN /
White
120
18.0 … 35.5
•
•
•
DDW-JJD-M1
DDW-JJD-M2
DDW-JJD-N1
18.0 … 22.4
22.4 … 28.5
28.5 … 35.5
NOTE:
1. All part number above comes in a quantity of 2000 units per reel.
2. Other luminous intensity groups are also available upon request.
3. Luminous intensity is measured with an accuracy of ±11%.
4. Wavelength binning is carried for all units as per the wavelength-binning table. Only one
wavelength group is allowed for each reel.
Wavelength Grouping.
Color
Group
Wavelength distribution (nm)
DDB; Blue
Full
W
X
464 - 476
464 - 468
468 - 472
472 - 476
Y
Dominant wavelength is measured with an accuracy of ±1 nm.
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DOMINANT Semiconductors
DDW, White Color Grouping
Dominant White Bin Structure
0.43
0.42
0.41
0.40
0.39
0.38
0.37
0.36
0.35
0.34
0.33
0.32
0.31
0.30
0.29
0.28
0.27
0.26
0.25
0.24
E3
E4
E1
E2
C3
C4
C1
C2
A3
A4
A1
A2
0.27
0.28
0.29
0.30
0.31
0.32
0.33
0.34
0.35
0.36
Chromaticity coordinate groups are measured with an accuracy of ±0.01.
Bin
A1 Cx
Cy
A2 Cx
Cy
A3 Cx
Cy
A4 Cx
Cy
C1 Cx
Cy
C2 Cx
Cy
C3 Cx
Cy
C4 Cx
Cy
W
Bin
0.2775 0.2900 0.2900 0.2775 E1 Cx
0.2732 0.2939 0.3114 0.2907 Cy
0.2775 0.2900 0.2900 0.2775 E2 Cx
0.2557 0.2764 0.2939 0.2732 Cy
0.2900 0.3025 0.3025 0.2900 E3 Cx
0.2939 0.3146 0.3321 0.3114 Cy
0.2900 0.3025 0.3025 0.2900 E4 Cx
X
0.3275 0.3400 0.3400 0.3275
0.3561 0.3768 0.3943 0.3736
0.3275 0.3400 0.3400 0.3275
0.3386 0.3593 0.3768 0.3561
0.3400 0.3525 0.3525 0.3400
0.3768 0.3975 0.4150 0.3943
0.3400 0.3525 0.3525 0.3400
0.3593 0.3800 0.3975 0.3768
0.2764 0.2971 0.3146 0.2939
0.3025 0.3150 0.3150 0.3025
0.3146 0.3354 0.3529 0.3321
0.3025 0.3150 0.3150 0.3025
0.2971 0.3179 0.3354 0.3146
0.3150 0.3275 0.3275 0.3150
0.3354 0.3561 0.3736 0.3529
0.3150 0.3275 0.3275 0.3150
0.3179 0.3386 0.3561 0.3354
Cy
Dominant color coordinate is measured with an accuracy of ±0.01
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DomiLED GaN DDx-xJx - Catalogue-v3.doc
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DOMINANT Semiconductors
Absolute Maximum Ratings.
Maximum Value
Unit
mA
DC forward current.
20
200
4.55
mA
V
Peak pulse current; (tp ≤ 10 μs, Duty cycle = 0.005)
Forward voltage (IF=20mA)
Reverse voltage (IR=10 μA)
LED junction temperature.
5
V
125
°C
Operating temperature.
-40 … +100
-40 … +100
85
°C
Storage temperature.
°C
Power dissipation ( at room temperature )
mW
Recommended Solder Pad
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DomiLED GaN DDx-xJx - Catalogue-v3.doc
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DOMINANT Semiconductors
Relative luminous intensity vs. forward current.
Forward current vs. forward voltage.
Intensity Vs Forward Current
Forward Current (mA) vs. Forward Voltage
(GaN:Blue)
35
30
25
20
15
10
5
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
5
10
15
20
25
30
35
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Forward Current (mA)
Forward Voltage (V)
Radiation pattern.
Maximum forward current vs. temperature.
30°
20°
10°
0°
25
1.0
20
15
10
5
40°
50°
0.8
0.6
0.4
0.2
60°
70°
80°
90°
0
0
10
20
30
40
50
60
70
80
90
100
0
Ambient Temperature
Relative Intensity vs. Wavelength
Relative Spectral Emission
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
White
Blue
400
450
500
550
600
650
700
Wavelength (nm)
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DomiLED GaN DDx-xJx - Catalogue-v3.doc
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DOMINANT Semiconductors
Taping And Orientation.
Reels come in quantity of 8000 units or 2000 units.
Reel diameters are 330 mm and 180 mm respectively.
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DomiLED GaN DDx-xJx - Catalogue-v3.doc
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DOMINANT Semiconductors
Recommended Sn-Pb IR-Reflow Soldering Profile.
Classification Reflow Profile (JEDEC J-STD-020C)
275
250
225
200
175
150
125
100
75
235-240oC
10-30s
Ramp-up
3 oC/sec max.
183 oC
60-150s
Ramp-down
6 oC/sec max.
Preheat
60-120s
50
360s max
100
25
0
50
150
200
Time (sec)
Recommended Pb Free IR-Reflow Soldering Profile.
Classification Reflow Profile (JEDEC J-STD-020C)
300
275
250
225
200
175
150
125
100
75
260-255oC
10-30s
Ramp-up
3 oC/sec max.
217 oC
60-150s
Ramp-down
6 oC/sec max.
Preheat
60-180s
50
480s max
25
0
50
100
150
200
Time (sec)
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DOMINANT Semiconductors
NOTE.
All the information published is considered to be reliable. However, DOMINANT
Semiconductors does not assume any liability arising out of the application or use of any
product described herein.
DOMINANT Semiconductors reserves the right to make changes at any time without notice
to any products in order to improve reliability, function or design.
DOMINANT Semiconductors products are not authorized for use as critical components in
life support devices or systems without the express written approval from the managing
director of DOMINANT Semiconductors.
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