TIP123 [DIOTEC]
Si-Epitaxial PlanarTransistors; 硅外延PlanarTransistors
| 型号： | TIP123 |
| 厂家： | 
DIOTEC SEMICONDUCTOR |
| 描述： | Si-Epitaxial PlanarTransistors |
| 文件： | 总2页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TIP120, TIP121, TIP122
NPN
Darlington Transistors
NPN
Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren
Version 2004-06-21
Collector current – Kollektorstrom
5 A
Plastic case
TO-220AB
Kunststoffgehäuse
Weight approx. – Gewicht ca.
2.2 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
1 = B1 2 = C2 3 = E2
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
TIP120
60 V
TIP121
80 V
TIP122
100 V
100 V
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
B open
E open
C open
VCE0
VCB0
VEB0
60 V
80 V
50 V
Power dissipation – Verlustleistung
without cooling – ohne Kühlung
with cooling – mit Kühlung
Ptot
2 W 1)
65 W
TC = 25°C Ptot
IC
Peak Collector current – Kollektor-Spitzenstrom ICM
Collector current – Kollektorstrom (dc)
5 A
8 A
Base current – Basisstrom (dc)
IB
Tj
TS
120 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
- 65…+ 150°C
- 65…+ 150°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
Collector-Emitter cutoff current – Kollektorreststrom
IB = 0, VCE = 30 V
IB = 0, VCE = 40 V
IB = 0, VCE = 50 V
TIP120
TIP121
TIP123
ICE0
ICE0
ICE0
–
–
–
–
–
–
500 nA
500 nA
500 nA
Collector-Base cutoff current – Kollektorreststrom
IE = 0, VCB = 60 V
IE = 0, VCB = 80 V
IE = 0, VCB = 100 V
TIP120
TIP121
TIP122
ICB0
ICB0
ICB0
–
–
–
–
–
–
200 nA
200 nA
200 nA
1
)
Valid, if leads are kept at ambient temperature at a distance of 5 mm from case
Gültig, wenn die Anschlußdrähte in 5 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
1
Darlington Transistors
TIP120, TIP121, TIP122
Kennwerte (Tj = 25°C)
Characteristics (Tj = 25°C)
Min.
Typ.
Max.
Emitter-Base cutoff current – Emitterreststrom
IC = 0, VEB = 5 V
IEB0
–
–
2 mA
Collector saturation voltage – Kollektor-Sättigungsspg. 1)
IC = 3 A, IB = 12 mA
IC = 5 A, IB = 20 mA
VCEsat
VCEsat
–
–
–
–
2 V
4 V
Base-Emitter on-voltage – Basis-Emitter-Spannung 1)
IC = 3 A, VCE = 3 V
VBEon
–
–
2.5 V
DC current gain – Kollektor-Basis-Stromverhältnis 1)
VCE = 3 V, IC = 0.5 A
VCE = 3 V, IC = 3 A
hFE
hFE
1000
1000
–
–
–
–
Small signal current gain – Kleinsignal-Stromverstärkung
VCE = 4 V, IC = 3 A, f = 1 MHz hfe
Collector-Base Capacitance – Kollektor-Basis-Kapazität
4
–
–
–
–
VCB = 10 V, IE = ie = 0, f = 100 kHz
CCB0
200 pF
Thermal resistance – Wärmewiderstand
junction to ambient air – Sperrschicht zu umgebender Luft
junction to case – Sperrschicht zu Gehäuse
RthA
RthC
62.5 K/W 2)
2 K/W
Admissible torque for mounting
Zulässiges Anzugsdrehmoment
M 4
9 ± 10% lb.in.
1 ± 10% Nm
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
TIP125, TIP126, TIP127
Equivalent Circuit – Ersatzschaltbild
C2
B1
T2
T1
E2
1
2
)
)
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
Valid, if leads are kept at ambient temperature at a distance of 5 mm from case
Gültig, wenn die Anschlußdrähte in 5 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
2
相关型号：
©2020 ICPDF网 联系我们和版权申明