SM5061R7 [DIOTEC]

Rectifier Diode,;
SM5061R7
型号: SM5061R7
厂家: DIOTEC SEMICONDUCTOR    DIOTEC SEMICONDUCTOR
描述:

Rectifier Diode,

文件: 总2页 (文件大小:105K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SM5059 ... SM5063  
Version 2012-02-04  
SM5059 ... SM5063  
Surface Mount Silicon Rectifier Diodes  
Silizium-Gleichrichterdioden für die Oberflächenmontage  
Nominal current – Nennstrom  
2 A  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
200...1000 V  
Plastic case MELF  
Kunststoffgehäuse MELF  
DO-213AB  
0.12 g  
Weight approx. – Gewicht ca.  
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
Standard packaging taped and reeled  
Standard Lieferform gegurtet auf Rolle  
Dimensions - Maße [mm]  
Maximum ratings  
Grenzwerte  
Type  
Typ  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
VRRM [V]  
Surge peak reverse voltage  
Stoßspitzensperrspannung  
VRSM [V]  
SM5059  
SM5060  
SM5061  
SM5062  
SM5063  
200  
400  
200  
400  
600  
600  
800  
800  
1000  
1000  
Max. average forward rectified current, R-load  
Dauergrenzstrom in Einwegschaltung mit R-Last  
TA = 50°C  
f > 15 Hz  
TA = 25°C  
TA = 25°C  
IFAV  
IFRM  
IFSM  
i2t  
2 A  
10 A 1)  
Repetitive peak forward current  
Periodischer Spitzenstrom  
Peak forward surge current, 50/60 Hz half sine-wave  
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle  
50/55 A  
12.5 A2s  
Rating for fusing, t < 10 ms  
Grenzlastintegral, t < 10 ms  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
-50...+175°C  
-50...+175°C  
Tj  
TS  
1
Mounted on P.C. board with 50 mm2 copper pads at each terminal  
Montage auf Leiterplatte mit 50 mm2 Kupferbelag (Lötpad) an jedem Anschluss  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1
 
SM5059 ... SM5063  
Characteristics  
Kennwerte  
Forward voltage – Durchlass-Spannung  
Tj = 25°C  
Tj = 25°C  
IF = 2 A  
VF  
< 1.1 V  
Leakage current  
Sperrstrom  
VR = VRRM  
IR  
IR  
< 5 µA  
< 300 µA  
Tj = 165°C VR = VRRM  
Thermal resistance junction to ambient air  
RthA  
< 45 K/W 1)  
Wärmewiderstand Sperrschicht – umgebende Luft  
Thermal resistance junction to terminal  
RthT  
< 10 K/W  
Wärmewiderstand Sperrschicht − Anschluss  
120  
[%]  
102  
[A]  
10  
100  
Tj = 125°C  
80  
Tj = 25°C  
1
60  
40  
10-1  
IF  
20  
IFAV  
0
50a-(2a-1.1v)  
10-2  
0.4  
1.0  
1.4  
VF 0.8  
1.2  
[V] 1.8  
0
TA  
100  
150  
50  
[°C]  
Rated forward current versus ambient temperature1)  
Forward characteristics (typical values)  
Durchlasskennlinien (typische Werte)  
Zul. Richtstrom in Abh. von der Umgebungstemp.1)  
102  
[A]  
10  
îF  
1
1
10  
102  
[n]  
103  
Peak forward surge current versus number of cycles at 50 Hz  
Durchlaß-Spitzenstrom in Abh. von der Zahl der Halbwellen bei 50 Hz  
1
Mounted on P.C. board with 50 mm2 copper pads at each terminal  
Montage auf Leiterplatte mit 50 mm2 Kupferbelag (Lötpad) an jedem Anschluss  
2
http://www.diotec.com/  
© Diotec Semiconductor AG  
 

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