S16MSD2 [DIOTEC]
Surface Mount Silicon Rectifier Diodes - Half Bridge; 表面贴装型硅整流二极管 - 半桥
| 型号： | S16MSD2 |
| 厂家： | 
DIOTEC SEMICONDUCTOR |
| 描述： | Surface Mount Silicon Rectifier Diodes - Half Bridge |
| 文件： | 总2页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S16ASD2 ... S16MSD2
S16ASD2 ... S16MSD2
Surface Mount Silicon Rectifier Diodes – Half Bridge
Silizium-Gleichrichterdioden für die Oberflächenmontage– Halbbrücke
Version 2010-09-22
Nominal current
Nennstrom
16 A
1.2
10.25±0.5
4.5±0.2
4
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
50...1000 V
Type
Typ
Plastic case
Kunststoffgehäuse
TO-263AB
D2PAK
1
2
3
1.3
0.8
Weight approx.
Gewicht ca.
1.6 g
5.08
0.4
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
1
2
3
4
Standard packaging in tubes
Standard Lieferform in Stangen
Dimensions - Maße [mm]
Maximum ratings and Characteristics
Grenz- und Kennwerte
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V] 1)
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V] 1)
Forward voltage
Durchlass-Spannung
VF [V] 1), Tj = 25°C
IF = 5 A
< 1.0
< 1.0
< 1.0
< 1.0
< 1.0
< 1.0
< 1.0
IF = 8 A
< 1.1
< 1.1
< 1.1
< 1.1
< 1.1
< 1.1
< 1.1
S16ASD2
S16BSD2
S16DSD2
S16GSD2
S16JSD2
S16KSD2
S16MSD2
50
100
200
400
600
800
1000
50
100
200
400
600
800
1000
Max. average forward current, R-load
Dauergrenzstrom mit R-Last
TC = 100°C
TC = 100°C
IFAV
IFAV
8 A 1)
16 A 2)
30 A 3)
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
TA = 25°C
TA = 25°C
IFRM
IFSM
i2t
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
135/150 A 1)
90 A2s 1)
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
-50...+150°C
-50...+175°C
Tj
TS
1
Per diode – Pro Diode
2
Output current when operating two devices in a full bridge configuration
Ausgangsstrom bei Betrieb zweier Bauteile als Vollbrücke
3
Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C
© Diotec Semiconductor AG
http://www.diotec.com/
1
S16ASD2 ... S16MSD2
Characteristics
Kennwerte
Leakage current
Sperrstrom
Tj = 25°C VR = VRRM
IR
< 10 µA
Thermal resistance junction to case
RthC
< 2.5 K/W 1)
Wärmewiderstand Sperrschicht – Gehäuse
102
120
[%]
[A]
10
100
80
Tj = 125°C
Tj = 25°C
1
60
40
10-1
IF
20
IFAV
0
200a-(5a-0.95v)
10-2
0.4
1.0
1.4
VF 0.8
1.2
[V] 1.8
0
TC
100
150
50
[°C]
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
Rated forward current vs. temp. of the case
Zul. Richtstrom in Abh. v. d. Gehäusetemperatur
1
Per diode – Pro Diode
2
http://www.diotec.com/
© Diotec Semiconductor AG
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