PN2222 [DIOTEC]
Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren; 硅外延平面开关晶体管硅外延平面Schalttransistoren
| 型号： | PN2222 |
| 厂家： | 
DIOTEC SEMICONDUCTOR |
| 描述： | Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren |
| 文件： | 总2页 (文件大小：97K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PN2222 / PN2222A
PN2222 / PN2222A
Si-Epi-Planar Switching Transistors
Si-Epi-Planar Schalttransistoren
NPN
NPN
Version 2006-09-12
Power dissipation
Verlustleistung
625 mW
Plastic case
Kunststoffgehäuse
TO-92
(10D3)
C B E
Weight approx. – Gewicht ca.
0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
2 x 2.54
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Dimensions - Maße [mm]
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
PN2222
PN2222A
(2N2222)
(2N2222A)
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Base-voltage – Kollektor-Basis-Spannung
Emitter-Base-voltage – Emitter-Basis-Spannung
Power dissipation – Verlustleistung
B open
E open
C open
VCEO
VCBO
VEBO
Ptot
30 V
40 V
75 V
6 V
60 V
5 V
625 mW 1)
Collector current – Kollektorstrom (dc)
IC
600 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis 2)
IC = 0.1 mA, VCE = 10 V
hFE
hFE
hFE
hFE
35
50
75
–
–
–
–
–
–
–
IC = 1 mA,
IC = 10 mA,
VCE = 10 V
VCE = 10 V
IC = 150 mA, VCE = 10 V
100
300
IC = 500 mA, VCE = 10 V
PN2222
PN2222A
hFE
hFE
30
40
–
–
–
–
h-Parameters at/bei VCE = 10 V, f = 1 kHz, IC = 1 mA / 10 mA
Small signal current gain
Kleinsignal-Stromverstärkung
PN2222A
PN2222A
hfe
hfe
50
75
–
–
300
375
Input impedance – Eingangs-Impedanz
PN2222A
PN2222A
hie
hie
2 kΩ
0.25 kΩ
–
–
8 kΩ
1.25 kΩ
Output admittance – Ausgangs-Leitwert
PN2222A
PN2222A
hoe
hoe
5 µS
25 µS
–
–
35 µS
200 µS
1
2
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
PN2222 / PN2222A
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)
IC = 150 mA, IB = 15 mA
PN2222
PN2222A
VCEsat
VCEsat
–
–
–
–
0.4 V
0.3 V
IC = 500 mA, IB = 50 mA
PN2222
PN2222A
VCEsat
VCEsat
–
–
–
–
1.6 V
1.0 V
Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)
IC = 150 mA, IB = 15 mA
PN2222
PN2222A
VBEsat
VBEsat
–
–
–
1.3 V
1.2 V
0.65 V
IC = 500 mA, IB = 50 mA
PN2222
PN2222A
VBEsat
VBEsat
–
–
–
–
2.6 V
2.0 V
Collector-Base cutoff current – Kollektor-Basis-Reststrom
VCB = 50 V, (E open)
VCB = 60 V, (E open)
PN2222
PN2222A
ICBO
ICBO
–
–
–
–
10 nA
10 nA
VCB = 50 V, Tj = 125°C, (E open)
VCB = 60 V, Tj = 125°C, (E open)
PN2222
PN2222A
ICBO
ICBO
–
–
–
–
10 µA
10 µA
Emitter-Base cutoff current – Emitter-Basis-Reststrom
VEB = 3 V, (C open)
PN2222A
IEB0
–
–-
–
100 nA
–
Gain-Bandwidth Product – Transitfrequenz
VCE = 20 V, IC = 20 mA, f = 100 MHz
fT
250 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 1 MHz
CCBO
CEBO
F
–
–
–
–
8 pF
30 pf
4 dB
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
–
Noise figure – Rauschzahl
VCE = 10 V, IC = 100 µA, RG = 1 kΩ, f = 1 kHz
PN2222A
–
Switching times – Schaltzeiten (between 10% and 90% levels)
td
tr
ts
tf
–
–
–
–
–
–
–
–
10 ns
25 ns
225 ns
60 ns
delay time
VCC = 3 V, VBE = 0.5 V
IC = 150 mA, IB1 = 15mA
rise time
storage time
VCC = 3 V, IC = 150 mA,
IB1 = IB2 = 15 mA
fall time
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
< 200 K/W 1)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
PN2709 / PN2709A
2
1
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
http://www.diotec.com/
© Diotec Semiconductor AG
相关型号：
PN2222-L-AP
Small Signal Bipolar Transistor, 0.6A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC
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