KBPC2510IP [DIOTEC]

Bridge Rectifier Diode, 1 Phase, 25A, 1000V V(RRM), Silicon, 28.50 X 28.50 MM, 10 MM HEIGHT, ROHS COMPLIANT, PLASTIC PACKAGE-4;
KBPC2510IP
型号: KBPC2510IP
厂家: DIOTEC SEMICONDUCTOR    DIOTEC SEMICONDUCTOR
描述:

Bridge Rectifier Diode, 1 Phase, 25A, 1000V V(RRM), Silicon, 28.50 X 28.50 MM, 10 MM HEIGHT, ROHS COMPLIANT, PLASTIC PACKAGE-4

整流二极管 桥式整流二极管 IOT 局域网
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KBPC2500F ... KBPC2516F, KBPC2500W ... KBPC2516W  
KBPC2500F ... KBPC2516F, KBPC2500W ... KBPC2516W  
Silicon-Bridge-Rectifiers  
Silizium-Brückengleichrichter  
Version 2006-12-09  
Type “FP“  
Nominal current  
Nennstrom  
25 A  
35...1000 V  
16.6±0.5  
Ø 5.2  
6.7  
+
7.3  
+
Alternating input voltage  
Eingangswechselspannung  
Plastic case with alu bottom  
Plastikgehäuse mit Alu-Boden  
Index “P“  
21.6±1  
18.1±0.5  
28.6±0.2  
=
=
Dimensions  
Abmessungen  
28.6 x 28.6 x 7.3 [mm]  
17 g  
Type “WP“  
Weight approx.  
Gewicht ca.  
11.6±0.5  
7.3  
+
Compound has classification UL94V-0  
Vergussmasse nach UL94V-0 klassifiziert  
+
Ø 5.2  
Standard packaging bulk  
Standard Lieferform lose im Karton  
18±0.5  
min. 30  
=
=
28.6±0.2  
Dimensions - Maße [mm]  
Recognized Product – Underwriters Laboratories Inc.® File E175067  
Anerkanntes Produkt – Underwriters Laboratories Inc.® Nr. E175067  
Maximum ratings  
Grenzwerte  
Type  
Typ  
Max. alternating input voltage  
Max. Eingangswechselspannung  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
VRRM [V] 1)  
V
VRMS [V]  
KBPC2500F/W  
KBPC2501F/W  
KBPC2502F/W  
KBPC2504F/W  
KBPC2506F/W  
KBPC2508F/W  
KBPC2510F/W  
KBPC2512F/W  
KBPC2514F/W  
KBPC2516F/W  
35  
50  
100  
70  
140  
280  
420  
560  
700  
800  
900  
1000  
200  
400  
600  
800  
1000  
1200  
1400  
1600  
1
Valid per diode – Gültig pro Diode  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1
KBPC2500F ... KBPC2516F, KBPC2500W ... KBPC2516W  
Maximum ratings  
Grenzwerte  
Repetitive peak forward current  
Periodischer Spitzenstrom  
f > 15 Hz  
TA = 25°C  
TA = 25°C  
IFRM  
IFSM  
i2t  
60 A 1)  
270/300 A  
375 A2s  
Peak forward surge current 50/60 Hz half sine-wave  
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle  
Rating for fusing, t < 10 ms  
Grenzlastintegral, t < 10 ms  
Operating junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
Tj  
TS  
-50...+150°C  
-50...+150°C  
Characteristics  
Kennwerte  
Max. current with cooling fin 300 cm²  
Dauergrenzstrom mit Kühlblech 300 cm2  
TA = 50°C R-load  
IFAV  
IFAV  
25 A  
20 A  
C-load  
Forward voltage – Durchlass-Spannung  
Leakage current – Sperrstrom  
Tj = 25°C IF = 12.5 A  
Tj = 25°C VR = VRRM  
VF  
IR  
< 1.2 V 2)  
< 25 µA  
Isolation voltage terminals to case  
VISO  
> 2500 V  
Isolationsspannung Anschlüsse zum Gehäuse  
Thermal resistance junction to case  
RthC  
< 2.0 K/W  
Wärmewiderstand Sperrschicht – Gehäuse  
Admissible torque for mounting  
Zulässiges Anzugsdrehmoment  
10-32 UNF  
M5  
18 ± 10% lb.in.  
2 ± 10% Nm  
102  
120  
[%]  
[A]  
10  
100  
Tj = 125°C  
80  
Tj = 25°C  
1
60  
40  
10-1  
IF  
20  
IFAV  
0
270a-(12a-1.2v)  
10-2  
0.4  
1.0  
1.4  
VF 0.8  
1.2  
[V] 1.8  
0
TA  
100  
150  
50  
[°C]  
Rated forward current versus ambient temperature1)  
Zul. Richtstrom in Abh. von der Umgebungstemp.1)  
Forward characteristics (typical values)  
Durchlasskennlinien (typische Werte)  
1
2
Valid, if the temperature of the case is kept to TC = 120°C – Gültig, wenn die Gehäusetemperatur auf TC = 120°C gehalten wird  
Valid for one branch – Gültig für einen Brückenzweig  
2
http://www.diotec.com/  
© Diotec Semiconductor AG  

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