BCX71K [DIOTEC]
Surface mount Si-Epitaxial PlanarTransistors; 表面贴装硅外延PlanarTransistors
| 型号： | BCX71K |
| 厂家： | 
DIOTEC SEMICONDUCTOR |
| 描述： | Surface mount Si-Epitaxial PlanarTransistors |
| 文件： | 总2页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCX 71
PNP
General Purpose Transistors
Surface mount Si-Epitaxial PlanarTransistors
PNP
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
Power dissipation – Verlustleistung
250 mW
±0.1
Plastic case
SOT-23
1.1
2.9
0.4
Kunststoffgehäuse
(TO-236)
3
Type
Code
Weight approx. – Gewicht ca.
0.01 g
2
1
Plastic material has UL classification 94V-0
1.9
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Dimensions / Maße in mm
1 = B 2 = E 3 = C
Maximum ratings (TA = 25ꢀC)
Grenzwerte (TA = 25ꢀC)
BCX 71
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (DC)
B open
E open
C open
- VCE0
- VCB0
- VEB0
Ptot
45 V
45 V
5 V
250 mW 1)
100 mA
- IC
Peak Collector current – Kollektor-Spitzenstrom - ICM
200 mA
Peak Base current – Basis-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
- IBM
Tj
TS
200 mA
150ꢀC
- 65…+ 150ꢀC
Characteristics (Tj = 25ꢀC)
Kennwerte (Tj = 25ꢀC)
Min.
Typ.
Max.
Collector-Base cutoff current – Kollektorreststrom
IE = 0, - VCB = 32 V
- ICB0
–
–
–
–
20 nA
20 ꢀA
IE = 0, - VCB = 32 V, Tj = 150ꢀC
Emitter-Base cutoff current – Emitterreststrom
IC = 0, - VEB = 4 V
- ICB0
- IEB0
–
–
20 nA
Collector saturation volt. – Kollektor-Sättigungsspg. 2)
- IC = 10 mA, - IB = 0.25 mA
- IC = 50 mA, - IB = 1.25 mA
- VCEsat
- VCEsat
60 mV
120 mV
–
–
250 mV
550 mV
1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2) Tested with pulses tp = 300 ꢀs, duty cycle ꢀ 2% – Gemessen mit Impulsen tp = 300 ꢀs, Schaltverhältnis ꢀ 2%
58
01.11.2003
General Purpose Transistors
BCX 71
Characteristics (Tj = 25ꢀC)
Kennwerte (Tj = 25ꢀC)
Min.
Typ.
Max.
Base saturation voltage – Basis-Sättigungsspannung 1)
- IC = 10 mA, - IB = 0.25 mA
- IC = 50 mA, - IB = 1.25 mA
- VBEsat
- VBEsat
600 mV
700 mV
–
–
850 mV
1050 mV
DC current gain – Kollektor-Basis-Stromverhältnis 1)
BCX 71G
BCX 71H
BCX 71J
BCX 71K
BCX 71G
BCX 71H
BCX 71J
BCX 71K
BCX 71G
BCX 71H
BCX 71J
BCX 71K
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
–
30
40
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
- VCE = 5 V, - IC = 10 ꢀA
- VCE = 5 V, - IC = 2 mA
- VCE = 1 V, - IC = 50 mA
100
120
180
250
380
60
80
100
110
–
220
310
460
630
–
–
–
–
Base-Emitter voltage – Basis-Emitter-Spannung 1)
- VCE = 5 V, - IC = 10 ꢀA
- VBEon
- VBEon
- VBEon
–
600 mV
–
550 mV
650 mV
720 mV
–
750 mV
–
- VCE = 5 V, - IC = 2 mA
- VCE = 1 V, - IC = 50 mA
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0
Emitter-Base Capacitance – Emitter-Basis-Kapazität
fT
100 MHz
–
–
–
–
–
–
4.5 pF
11 pF
- VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Noise figure – Rauschzahl
CEB0
- VCE = 5 V, - IC = 200 ꢀA, RG = 2 kꢁ,
F
–
2 dB
6 dB
f = 1 kHz, ꢂf = 200 Hz
Thermal resistance junction to ambient air
RthA
420 K/W 2)
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
BCX 70 series
Empfohlene komplementäre NPN-Transistoren
Marking
BCX 71G = BG
BCX 71H = BH
BCX 71J = BJ
BCX 71K = BK
Stempelung
1) Tested with pulses tp = 300 ꢀs, duty cycle ꢀ 2% – Gemessen mit Impulsen tp = 300 ꢀs, Schaltverhältnis ꢀ 2%
2) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
59
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