BC860C [DIOTEC]
Surface mount Si-Epitaxial PlanarTransistors; 表面贴装硅外延PlanarTransistors
| 型号： | BC860C |
| 厂家： | 
DIOTEC SEMICONDUCTOR |
| 描述： | Surface mount Si-Epitaxial PlanarTransistors |
| 文件： | 总2页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC 856 ... BC 860
PNP
General Purpose Transistors
Surface mount Si-Epitaxial PlanarTransistors
PNP
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
Power dissipation – Verlustleistung
250 mW
±0.1
Plastic case
SOT-23
1.1
2.9
0.4
Kunststoffgehäuse
(TO-236)
3
Type
Code
Weight approx. – Gewicht ca.
0.01 g
2
1
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
1.9
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Dimensions / Maße in mm
1 = B 2 = E 3 = C
Maximum ratings (TA = 25ꢀC)
Grenzwerte (TA = 25ꢀC)
BC 856
65 V
80 V
BC 857/860 BC 858/859
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (DC)
B open
E open
C open
- VCE0
- VCB0
- VEB0
Ptot
45 V
50 V
30 V
30 V
5 V
250 mW 1)
100 mA
- IC
Peak Collector current – Kollektor-Spitzenstrom - ICM
200 mA
Peak Base current – Basis-Spitzenstrom
Peak Emitter current – Emitter-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
- IBM
IEM
Tj
200 mA
200 mA
150ꢀC
- 65…+ 150ꢀC
TS
Characteristics (Tj = 25ꢀC)
Kennwerte (Tj = 25ꢀC)
Group A
Group B
Group C
DC current gain – Kollektor-Basis-Stromverhältnis 2)
- VCE = 5 V, - IC = 10 ꢀA
- VCE = 5 V, - IC = 2 mA
hFE
hFE
typ. 90
110...220
typ. 150
200...450
typ. 270
420...800
h-Parameters at - VCE = 5V, - IC = 2 mA, f = 1 kHz
Small signal current gain
hfe
typ. 220
typ. 330
typ. 600
Kleinsignal-Stromverstärkung
Input impedance – Eingangs-Impedanz
Output admittance – Ausgangs-Leitwert
hie
hoe
1.6...4.5 kꢁ
18 < 30 ꢀS
3.2...8.5 kꢁ
30 < 60 ꢀS
6...15 kꢁ
60 < 110 ꢀS
Reverse voltage transfer ratio
Spannungsrückwirkung
hre
typ.1.5 *10-4
typ. 2 *10-4
typ. 3 *10-4
1
2
)
)
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
Tested with pulses tp = 300 ꢀs, duty cycle ꢀ 2% – Gemessen mit Impulsen tp = 300 ꢀs, Schaltverhältnis ꢀ 2%
14
01.11.2003
General Purpose Transistors
BC 856 ... BC 860
Characteristics (Tj = 25ꢀC)
Kennwerte (Tj = 25ꢀC)
Min.
Typ.
Max.
Collector saturation volt. – Kollektor-Sättigungsspannung 1)
- IC = 10 mA, - IB = 0.5 mA
- IC = 100 mA, - IB = 5 mA
-VCEsat
-VCEsat
–
–
90 mV
200 mV
250 mV
600 mV
Base saturation voltage – Basis-Sättigungsspannung 1)
- IC = 10 mA, - IB = 0.5 mA
- IC = 100 mA, - IB = 5 mA
Base-Emitter voltage – Basis-Emitter-Spannung 1)
- VCE = 5 V, - IC = 2 mA
- VBEsat
- VBEsat
–
–
700 mV
900 mV
–
–
- VBEon
- VBEon
600 mV
–
650 mV
–
750 mV
820 mV
- VCE = 5 V, - IC = 10 mA
Collector-Base cutoff current – Kollektorreststrom
IE = 0, - VCB = 30 V
IE = 0, - VCB = 30 V, Tj = 150ꢀC
Emitter-Base cutoff current – Emitterreststrom
IC = 0, - VEB = 5 V
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- ICB0
- ICB0
–
–
–
–
15 nA
5 ꢀA
- IEB0
fT
–
100 MHz
–
–
–
–
100 nA
–
- VCB = 10 V, IE = ie = 0, f = 1 MHz
Noise figure – Rauschzahl
CCB0
6 pF
BC 856...
- VCE = 5 V, - IC = 200 ꢀA
RG = 2 kꢁ, f = 1 kHz,
ꢂf = 200 Hz
F
F
–
–
2 dB
1 dB
10 dB
4 dB
BC 858
BC 859/860
- VCE = 5 V, - IC = 200 ꢀA
RG = 2 kꢁ, f = 30...15 kHz
BC 859
BC 860
F
F
–
–
1.2 dB
1.2 dB
4 dB
4 dB
Equivalent noise voltage – Äquivalente Rauschspannung
- VCE = 5 V, - IC = 200 ꢀA
BC 860
uF
–
–
0.11 ꢀV
RG = 2 kꢁ, f = 10 ... 50 Hz
Thermal resistance junction to ambient air
RthA
420 K/W 2)
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
BC 846 ... BC 850
BC 856A = 3A
BC 857A = 3E
BC 858A = 3J
BC 856B = 3B
Marking of available current gain
groups per type
BC 857B = 3F
BC 858B = 3K
BC 859B = 4B
BC 860B = 4F
BC 857C = 3G
BC 858C = 3L
BC 859C = 4C
BC 860C = 4G
Stempelung der lieferbaren Strom-
verstärkungsgruppen pro Typ
1
2
)
)
Tested with pulses tp = 300 ꢀs, duty cycle ꢀ 2% – Gemessen mit Impulsen tp = 300 ꢀs, Schaltverhältnis ꢀ 2%
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
15
01.11.2003
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