BC856AW [DIOTEC]
Surface mount Si-Epitaxial PlanarTransistors; 表面贴装硅外延PlanarTransistors
| 型号： | BC856AW |
| 厂家： | 
DIOTEC SEMICONDUCTOR |
| 描述： | Surface mount Si-Epitaxial PlanarTransistors |
| 文件： | 总2页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC 856W ... BC 860W
PNP
General Purpose Transistors
Surface mount Si-Epitaxial PlanarTransistors
PNP
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
Power dissipation – Verlustleistung
200 mW
SOT-323
±0.1
±0.1
Plastic case
2
1
0.3
Kunststoffgehäuse
3
Type
Weight approx. – Gewicht ca.
0.01 g
Code
1
2
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
1.3
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Dimensions / Maße in mm
1 = B 2 = E 3 = C
Maximum ratings (TA = 25ꢀC)
Grenzwerte (TA = 25ꢀC)
BC 856W
BC 857W
BC 858W
BC 860W
BC 859W
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (DC)
B open
E open
C open
- VCE0
- VCB0
- VEB0
Ptot
65 V
80 V
45 V
50 V
5 V
30 V
30 V
200 mW 1)
100 mA
200 mA
200 mA
200 mA
- IC
Peak Collector current – Kollektor-Spitzenstrom - ICM
Peak Base current – Basis-Spitzenstrom
Peak Emitter current – Emitter-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
- IBM
IEM
Tj
150
ꢀC
TS
- 65…+ 150 C
ꢀ
Characteristics (Tj = 25ꢀC)
Kennwerte (Tj = 25ꢀC)
Group A
Group B
Group C
DC current gain – Kollektor-Basis-Stromverhältnis 2)
- VCE = 5 V, - IC = 10
- VCE = 5 V, - IC = 2 mA
ꢀ
A
hFE
hFE
typ. 90
110...220
typ. 150
200...450
typ. 270
420...800
h-Parameters at - VCE = 5V, - IC = 2 mA, f = 1 kHz
Small signal current gain – Stromverstärkung hfe
typ. 220
typ. 330
typ. 600
Input impedance – Eingangs-Impedanz
Output admittance – Ausgangs-Leitwert
hie
hoe
1.6...4.5 k
ꢁ
3.2...8.5 k
ꢁ
6...15 k
60 < 110
ꢁ
18 < 30
ꢀ
S
30 < 60
ꢀ
S
ꢀ
S
Reverse voltage transfer ratio
Spannungsrückwirkung
hre
typ.1.5 *10-4
typ. 2 *10-4
typ. 3 *10-4
1
2
)
)
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
Tested with pulses tp = 300 ꢀs, duty cycle ꢀ 2% – Gemessen mit Impulsen tp = 300 ꢀs, Schaltverhältnis ꢀ 2%
16
01.11.2003
General Purpose Transistors
BC 856W ... BC 860W
Characteristics (Tj = 25ꢀC)
Kennwerte (Tj = 25ꢀC)
Min.
Typ.
Max.
Collector saturation volt. – Kollektor-Sättigungsspannung 1)
- IC = 10 mA, - IB = 0.5 mA
- IC = 100 mA, - IB = 5 mA
-VCEsat
-VCEsat
–
–
75 mV
250 mV
300 mV
600 mV
Base saturation voltage – Basis-Sättigungsspannung 1)
- IC = 10 mA, - IB = 0.5 mA
- IC = 100 mA, - IB = 5 mA
Base-Emitter voltage – Basis-Emitter-Spannung 1)
- VCE = 5 V, - IC = 2 mA
- VBEsat
- VBEsat
–
–
700 mV
850 mV
–
–
- VBEon
- VBEon
600 mV
–
650 mV
–
750 mV
820 mV
- VCE = 5 V, - IC = 10 mA
Collector-Base cutoff current – Kollektorreststrom
IE = 0, - VCB = 30 V
IE = 0, - VCB = 30 V, Tj = 150ꢀC
Emitter-Base cutoff current – Emitterreststrom
IC = 0, - VEB = 5 V
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- ICB0
- ICB0
–
–
–
–
15 nA
4 ꢀA
- IEB0
fT
–
100 MHz
–
–
–
100 nA
–
- VCB = 10 V, IE = ie = 0, f = 1 MHz
Noise figure – Rauschzahl
CCB0
10 pF
12 pF
BC 856W...
BC 858W
F
–
–
–
–
10 dB
4 dB
- VCE = 5 V, - IC = 200 ꢀA
RG = 2 kꢁ, f = 1 kHz,
ꢂf = 200 Hz
BC 859W...
BC860W
BC 859W
BC 860W
- VCE = 5 V, - IC = 200 ꢀA
RG = 2 kꢁ, f = 30...15 kHz
F
F
–
–
–
–
4 dB
4 dB
Thermal resistance junction to ambient air
RthA
620 K/W 2)
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
BC 846W ... BC 850W
BC 856AW = 3A BC 856BW = 3B
BC 857AW = 3E BC 857BW = 3F
Marking of available current gain
groups per type
BC 857CW = 3G
BC 858AW = 3J
BC 858BW = 3K BC 858CW = 3L
BC 859BW = 4B BC 859CW = 4C
Stempelung der lieferbaren Strom-
verstärkungsgruppen pro Typ
BC 860BW = 4F
BC 860CW = 4G
1
2
)
)
Tested with pulses tp = 300 ꢀs, duty cycle ꢀ 2% – Gemessen mit Impulsen tp = 300 ꢀs, Schaltverhältnis ꢀ 2%
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
17
01.11.2003
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