BC817 [DIOTEC]
Surface mount Si-Epitaxial PlanarTransistors; 表面贴装硅外延PlanarTransistors
| 型号： | BC817 |
| 厂家： | 
DIOTEC SEMICONDUCTOR |
| 描述： | Surface mount Si-Epitaxial PlanarTransistors |
| 文件： | 总2页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC 817 / BC 818
NPN
General Purpose Transistors
Surface mount Si-Epitaxial PlanarTransistors
NPN
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
Power dissipation – Verlustleistung
310 mW
±0.1
Plastic case
SOT-23
1.1
2.9
0.4
Kunststoffgehäuse
(TO-236)
3
Type
Code
Weight approx. – Gewicht ca.
0.01 g
2
1
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
1.9
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Dimensions / Maße in mm
1 = B 2 = E 3 = C
Maximum ratings (TA = 25ꢀC)
Grenzwerte (TA = 25ꢀC)
BC 817
BC 818
25 V
30 V
Collector-Emitter-voltage
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (DC)
Peak Coll. current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Peak Emitter current – Emitter-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
B shorted VCES
E open
C open
VCE0
45 V
50 V
50 V
VCB0
VEB0
Ptot
IC
ICM
IBM
- IEM
Tj
30 V
5 V
310 mW 1)
800 mA
1000 mA
200 mA
1000 mA
150ꢀC
TS
- 65…+ 150ꢀC
Characteristics, Tj = 25ꢀC
Kennwerte, Tj = 25ꢀC
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis
VCE = 1 V, IC = 100 mA
VCE = 1 V, IC = 500 mA
hFE
hFE
hFE
hFE
hFE
100
40
100
160
250
–
–
160
250
400
600
–
250
400
600
BC817
BC818
Group -16
Group -25
Group -40
VCE = 1 V, IC = 100 mA
1
)
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
6
01.11.2003
General Purpose Transistors
BC 817 / BC 818
Characteristics, Tj = 25ꢀC
Kennwerte, Tj = 25ꢀC
Min.
Typ.
Max.
0.7 V
1.3 V
1.2 V
Collector saturation voltage – Kollektor-Sättigungsspg.
IC = 500 mA, IB = 50 mA
Base saturation voltage – Basis-Sättigungsspannung
VCEsat
–
–
–
–
–
–
IC = 500 mA, IB = 50 mA
VBEsat
Base-Emitter voltage – Basis-Emitter-Spannung
VCE = 1 V, - IC = 500 mA
VBE
Collector-Base cutoff current – Kollektorreststrom
IE = 0, VCB = 20 V
ICB0
ICB0
–
–
–
–
100 nA
5 ꢀA
IE = 0, VCB = 20 V, Tj = 150ꢀC
Emitter-Base cutoff current – Emitterreststrom
IC = 0, VEB = 4 V
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 50 MHz
IEB0
fT
–
–
–
100 nA
–
100 MHz
12 pF
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 1 MHz
CCB0
–
–
Thermal resistance junction to ambient air
RthA
320 K/W 1)
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BC 807 / BC 808
BC 817-16 = 6A BC 817-25 = 6B BC 817-40 = 6C
BC 817 = 6D
BC 818-16 = 6E BC 818-25 = 6F BC 818-40 = 6G
BC 818 = 6H
Marking of available current gain
groups per type
Stempelung der lieferbaren Strom-
verstärkungsgruppen pro Typ
1
)
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
7
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