BC807 [DIOTEC]
Surface mount Si-Epitaxial PlanarTransistors; 表面贴装硅外延PlanarTransistors型号: | BC807 |
厂家: | DIOTEC SEMICONDUCTOR |
描述: | Surface mount Si-Epitaxial PlanarTransistors |
文件: | 总2页 (文件大小:121K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BC 807 / BC 808
PNP
General Purpose Transistors
Surface mount Si-Epitaxial PlanarTransistors
PNP
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
Power dissipation – Verlustleistung
310 mW
±0.1
Plastic case
SOT-23
1.1
2.9
0.4
Kunststoffgehäuse
(TO-236)
3
Type
Code
Weight approx. – Gewicht ca.
0.01 g
2
1
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
1.9
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Dimensions / Maße in mm
1 = B 2 = E 3 = C
Maximum ratings (TA = 25ꢀC)
Grenzwerte (TA = 25ꢀC)
BC 807
BC 808
25 V
30 V
Collector-Emitter-voltage
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
Power dissipation – Verlustleistung
B open
B shorted - VCES
E open
C open
- VCE0
45 V
50 V
50 V
- VCB0
- VEB0
Ptot
30 V
5 V
310 mW 1)
800 mA
1000 mA
200 mA
1000 mA
150ꢀC
Collector current – Kollektorstrom (DC)
Peak Coll. current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Peak Emitter current – Emitter-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
- IC
- ICM
- IBM
IEM
Tj
TS
- 65…+ 150ꢀC
Characteristics, Tj = 25ꢀC
Kennwerte, Tj = 25ꢀC
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis
- VCE = 1 V, - IC = 100 mA
- VCE = 1 V, - IC = 500 mA
hFE
hFE
hFE
hFE
hFE
100
40
100
160
250
–
–
160
250
400
600
–
250
400
600
BC807
BC808
Group -16
Group -25
Group -40
- VCE = 1 V, - IC = 100 mA
1
)
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2
01.11.2003
General Purpose Transistors
BC 807 / BC 808
Characteristics, Tj = 25ꢀC
Kennwerte, Tj = 25ꢀC
Min.
Typ.
Max.
0.7 V
1.3 V
1.2 V
Collector saturation voltage – Kollektor-Sättigungsspg.
- IC = 500 mA, - IB = 50 mA
- VCEsat
–
–
–
–
–
–
Base saturation voltage – Basis-Sättigungsspannung
- IC = 500 mA, - IB = 50 mA
- VBEsat
Base-Emitter voltage – Basis-Emitter-Spannung
- VCE = 1 V, - IC = 500 mA
- VBE
Collector-Base cutoff current – Kollektorreststrom
IE = 0, - VCB = 20 V
- ICB0
- ICB0
–
–
–
–
100 nA
5 ꢀA
IE = 0, - VCB = 20 V, Tj = 150ꢀC
Emitter-Base cutoff current – Emitterreststrom
IC = 0, - VEB = 4 V
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 50 MHz
- IEB0
fT
–
–
100 nA
–
80 MHz 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 1 MHz
CCB0
–
12 pF
–
Thermal resistance junction to ambient air
RthA
320 K/W 1)
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
BC 817 / BC 818
BC 807-16 = 5A BC 807-25 = 5B BC 807-40 = 5C
BC 807 = 5D
BC 808-16 = 5E BC 808-25 = 5F BC 808-40 = 5G
BC 808 = 5H
Marking of available current gain
groups per type
Stempelung der lieferbaren Strom-
verstärkungsgruppen pro Typ
1
)
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
3
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BC807-16
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