BC807-16W [DIOTEC]
Surface mount Si-Epitaxial PlanarTransistors; 表面贴装硅外延PlanarTransistors
| 型号： | BC807-16W |
| 厂家： | 
DIOTEC SEMICONDUCTOR |
| 描述： | Surface mount Si-Epitaxial PlanarTransistors |
| 文件： | 总2页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC 807W / BC 808W
PNP
General Purpose Transistors
Surface mount Si-Epitaxial PlanarTransistors
PNP
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
Power dissipation – Verlustleistung
225 mW
SOT-323
±0.1
±0.1
Plastic case
2
1
0.3
Kunststoffgehäuse
3
Type
Weight approx. – Gewicht ca.
0.01 g
Code
1
2
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
1.3
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Dimensions / Maße in mm
1 = B 2 = E 3 = C
Maximum ratings (TA = 25ꢀC)
Grenzwerte (TA = 25ꢀC)
BC 807W
BC 808W
25 V
Collector-Emitter-voltage
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
Power dissipation – Verlustleistung
B open
B shorted - VCES
E open
C open
- VCE0
45 V
50 V
50 V
30 V
30 V
- VCB0
- VEB0
Ptot
5 V
225 mW 1)
500 mA
1000 mA
200 mA
1000 mA
150ꢀC
Collector current – Kollektorstrom (DC)
Peak Coll. current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Peak Emitter current – Emitter-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
- IC
- ICM
- IBM
IEM
Tj
TS
- 65…+ 150ꢀC
Characteristics, Tj = 25ꢀC
Kennwerte, Tj = 25ꢀC
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis
- VCE = 1 V, - IC = 100 mA
- VCE = 1 V, - IC = 500 mA
hFE
hFE
100
40
–
–
600
–
BC807W
BC808W
Group -16W hFE
Group -25W hFE
Group -40W hFE
100
160
250
160
250
400
250
400
600
- VCE = 1 V, - IC = 100 mA
1
)
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
4
01.11.2003
General Purpose Transistors
BC 807W / BC 808W
Characteristics, Tj = 25ꢀC
Kennwerte, Tj = 25ꢀC
Min.
Typ.
Max.
0.7 V
1.3 V
1.2 V
Collector saturation voltage – Kollektor-Sättigungsspg.
- IC = 500 mA, - IB = 50 mA
- VCEsat
–
–
–
–
–
–
Base saturation voltage – Basis-Sättigungsspannung
- IC = 500 mA, - IB = 50 mA
- VBEsat
Base-Emitter voltage – Basis-Emitter-Spannung
- VCE = 1 V, - IC = 500 mA
- VBE
Collector-Base cutoff current – Kollektorreststrom
IE = 0, - VCB = 20 V
- ICB0
- ICB0
–
–
–
–
100 nA
5 ꢀA
IE = 0, - VCB = 20 V, Tj = 150ꢀC
Emitter-Base cutoff current – Emitterreststrom
IC = 0, - VEB = 4 V
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 50 MHz
- IEB0
fT
–
–
100 nA
–
80 MHz 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 1 MHz
CCB0
–
10 pF
–
Thermal resistance junction to ambient air
RthA
620 K/W 1)
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
BC 817W / BC 818W
BC 807-16W = 5A BC 807-25W = 5B BC 807-40W = 5C
BC 807W = 5D
Marking of available current gain
groups per type
Stempelung der lieferbaren Strom
verstärkungsgruppen pro Typ
BC 808-16W = 5E BC 808-25W = 5F
BC 808W = 5H
BC 808-40W = 5G
1
)
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
5
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