BC549BBK [DIOTEC]
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3;
| 型号： | BC549BBK |
| 厂家： | 
DIOTEC SEMICONDUCTOR |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3 晶体 小信号双极晶体管 |
| 文件： | 总2页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC 546 ... BC 549
NPN
General Purpose Transistors
NPN
Si-Epitaxial PlanarTransistors
Power dissipation – Verlustleistung
500 mW
Plastic case
TO-92
(10D3)
Kunststoffgehäuse
Weight approx. – Gewicht ca.
0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Pinning
Standard Lieferform gegurtet in Ammo-Pack
1 = C 2 = B 3 = E
Maximum ratings (TA = 25ꢀC)
Grenzwerte (TA = 25ꢀC)
BC 546
65 V
85 V
80 V
6 V
BC 547
45 V
50 V
50 V
6 V
500 mW 1)
100 mA
200 mA
200 mA
200 mA
150ꢀC
BC 548/549
30 V
Collector-Emitter-voltage
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (DC)
Peak Coll. current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Peak Emitter current – Emitter-Spitzenstrom
Junction temp. – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
B shorted
E open
VCE0
VCES
VCB0
VEB0
Ptot
IC
ICM
IBM
- IEM
Tj
30 V
30 V
5 V
C open
TS
- 65…+ 150ꢀC
Characteristics, Tj = 25ꢀC
Kennwerte, Tj = 25ꢀC
Group A
Group B
Group C
DC current gain – Kollektor-Basis-Stromverhältnis
VCE = 5 V, IC = 10 ꢀA
VCE = 5 V, IC = 2 mA
VCE = 5 V, IC = 100 mA
hFE
hFE
hFE
typ. 90
110...220
typ. 120
typ. 150
200...450
typ. 200
typ. 270
420...800
typ.400
h-Parameters at VCE = 5V, IC = 2 mA, f = 1 kHz
Small signal current gain – Stromverst.
Input impedance – Eingangsimpedanz
Output admittance – Ausgangsleitwert
hfe
hie
hoe
typ. 220
1.6...4.5 kꢁ
18 < 30 ꢀS
typ. 330
3.2...8.5 kꢁ
30 < 60 ꢀS
typ. 600
6...15 kꢁ
60 < 110 ꢀS
Reverse voltage transfer ratio
Spannungsrückwirkung
hre
typ.1.5 *10-4
typ. 2 *10-4
typ. 3 *10-4
1
)
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
6
01.11.2003
General Purpose Transistors
BC 546 ... BC 549
Characteristics, Tj = 25ꢀC
Kennwerte, Tj = 25ꢀC
Min.
Typ.
Max.
Collector saturation voltage – Kollektor-Sättigungsspannung
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VCEsat
VCEsat
–
–
80 mV
200 mV
200 mV
600 mV
Base saturation voltage – Basis-Sättigungsspannung
IC = 10 mA, IB = 0.5 mA
VBEsat
VBEsat
–
–
700 mV
900 mV
–
–
IC = 100 mA, IB = 5 mA
Base-Emitter voltage – Basis-Emitter-Spannung
V
V
CE = 5 V, IC = 2 mA
CE = 5 V, IC = 10 mA
VBE
VBE
580 mV
–
660 mV
–
700 mV
720 mV
Collector-Emitter cutoff current – Kollektorreststrom
V
V
V
V
CE = 80 V
CE = 50 V
CE = 30 V
CE = 30 V
BC 546
BC 547
BC 548
BC 549
ICES
ICES
ICES
ICES
–
–
–
–
0.2 nA
0.2 nA
0.2 nA
0.2 nA
15 nA
15 nA
15 nA
15 nA
Collector-Emitter cutoff current – Kollektorreststrom
V
V
V
V
CE = 80 V, Tj = 125ꢀC
CE = 50 V, Tj = 125ꢀC
CE = 30 V, Tj = 125ꢀC
CE = 30 V, Tj = 125ꢀC
BC 546
BC 547
BC 548
BC 549
ICES
ICES
ICES
ICES
–
–
–
–
–
–
–
–
4 ꢀA
4 ꢀA
4 ꢀA
4 ꢀA
Gain-Bandwidth Product – Transitfrequenz
CE = 5 V, IC = 10 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
V
fT
–
–
–
300 MHz
3.5 pF
9 pF
–
6 pF
–
V
CB = 10 V, f = 1 MHz
Emitter-Base Capacitance – Emitter-Basis-Kapazität
EB = 0.5 V, f = 1 MHz
Noise figure – Rauschmaß
CE = 5 V, IC = 200 ꢀA
CCB0
V
CEB0
V
BC 547
BC 548
BC 549
F
F
F
–
–
–
2 dB
1.2 dB
1.2 dB
10 dB
4 dB
4 dB
RG = 2 kꢁ f = 1 kHz,
ꢂ f = 200 Hz
Thermal resistance junction to ambient air
RthA
250 K/W 1)
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
BC 556 ... BC 559
Empfohlene komplementäre PNP-Transistoren
Available current gain groups per type
BC 546A
BC 546B
BC 547B
BC 548B
BC 549B
Lieferbare Stromverstärkungsgruppen pro Typ
BC 547A
BC 548A
BC 547C
BC 548C
BC 549C
1
)
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
01.11.2003
7
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