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B125S-SLIM [DIOTEC]

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B125S-SLIM
型号： B125S-SLIM
厂家： DIOTEC SEMICONDUCTOR    DIOTEC SEMICONDUCTOR
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整流二极管 桥式整流二极管 光电二极管 IOT
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B40D ... B500D  
B40D ... B500D  
Silicon-Bridge-Rectifiers  
Silizium-Brückengleichrichter  
Version 2009-01-02  
Nominal current  
Nennstrom  
1 A  
Alternating input voltage  
Eingangswechselspannung  
40...500 V  
Plastic case DIL  
Kunststoffgehäuse DIL  
8.3 x 6.4 x 3.1  
[mm]  
Weight approx. – Gewicht ca.  
0.4 g  
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
Standard packaging: plastic tubes  
Standard Lieferform: Plastik-Schienen  
Dimensions - Maße [mm]  
Recognized Product – Underwriters Laboratories Inc.® File E175067  
Anerkanntes Produkt – Underwriters Laboratories Inc.® Nr. E175067  
Maximum ratings  
Grenzwerte  
Type  
Typ  
Max. alternating input voltage  
Max. Eingangswechselspannung  
VVRMS [V]  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
VRRM [V] 1)  
B40D  
40  
80  
80  
B80D  
160  
B125D  
B250D  
B380D  
B500D  
125  
250  
380  
500  
250  
600  
800  
1000  
Repetitive peak forward current  
Periodischer Spitzenstrom  
f > 15 Hz  
TA = 25°C  
TA = 25°C  
IFRM  
IFSM  
i2t  
10 A 2)  
40/44 A  
8 A2s  
Peak forward surge current, 50/60 Hz half sine-wave  
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle  
Rating for fusing, t < 10 ms  
Grenzlastintegral, t < 10 ms  
Operating junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
Tj  
TS  
-50...+150°C  
-50...+150°C  
1
2
Valid per diode – Gültig pro Diode  
Max. temperature of the terminals TT = 100°C – Max. Temperatur der Anschlüsse TT = 100°C  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1
 
 
B40D ... B500D  
Characteristics  
Kennwerte  
Max. average forward rectified current  
Dauergrenzstrom  
TA = 50°C  
R-load  
C-load  
IFAV  
IFAV  
1.0 A 1)  
0.8 A 1)  
Forward voltage – Durchlass-Spannung  
Leakage current – Sperrstrom  
Tj = 25°C  
Tj = 25°C  
IF = 1 A  
VF  
IR  
< 1.1 V 2)  
VR = VRRM  
< 10 µA  
Thermal resistance junction to ambient air  
RthA  
< 60 K/W1)  
Wärmewiderstand Sperrschicht – umgebende Luft  
Type  
Typ  
Max. admissible load capacitor  
Max. zulässiger Ladekondensator  
CL [µF]  
Min. required protective resistor  
Min. erforderl. Schutzwiderstand  
Rt [Ω]  
B40D  
2500  
1250  
800  
0.005  
0.005  
0.005  
0.005  
0.005  
0.005  
2.0  
4.0  
80  
160  
250  
600  
800  
B80D  
B125D  
B250D  
B380D  
B500D  
6.3  
333  
15.0  
20.0  
250  
200  
25.0  
1000  
102  
120  
[%]  
[A]  
10  
100  
Tj = 125°C  
80  
Tj = 25°C  
1
60  
40  
10-1  
IF  
20  
IFAV  
40a-(1a-1.1v)  
10-2  
0
0
0.4  
1.0  
1.4  
VF 0.8  
1.2  
[V] 1.8  
TA  
100  
150  
50  
[°C]  
Rated forward current versus ambient temperature  
Zul. Richtstrom in Abh. von der Umgebungstemp.  
Forward characteristics (typical values)  
Durchlasskennlinien (typische Werte)  
1
2
Mounted on P.C. Board with 25 mm2 copper pads at each terminal  
Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad) an jedem Anschluss  
Valid per diode – Gültig pro Diode  
2
http://www.diotec.com/  
© Diotec Semiconductor AG  
 
 

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