30CTQ040 [DIOTEC]
High Temperature Schottky Rectifier . Common Cathode; 高温肖特基整流器。共阴极
| 型号： | 30CTQ040 |
| 厂家： | 
DIOTEC SEMICONDUCTOR |
| 描述： | High Temperature Schottky Rectifier . Common Cathode |
| 文件： | 总2页 (文件大小：138K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
30CTQ035 ... 30CTQ045
30CTQ035 ... 30CTQ045
High Temperature Schottky Rectifier – Common Cathode
Hochtemperatur Schottky Gleichrichterdiode – Gemeinsame Kathode
Version 2013-05-07
Nominal current
Nennstrom
2 x 15 A
35...45 V
TO-220AB
1.8 g
10.1±0.3
1.2±0.2
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Ø 3.8±0.2
4
4
2
4.5±0.2
Plastic case
Kunststoffgehäuse
Type
Typ
1 2 3
Weight approx.
Gewicht ca.
2.67±0.2
0.42±0.1
1.3±0.1
0.8±0.2
1
3
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
2.54±0.1
Standard packaging in tubes
Standard Lieferform in Stangen
Dimensions - Maße [mm]
Maximum ratings and Characteristics
Grenz- und Kennwerte
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V] 1)
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V] 1)
Forward voltage
Durchlass-Spannung
VF [V] 1), Tj = 25°C
IF = 5 A
< 0.52
< 0.52
< 0.52
IF = 15 A
< 0.62
< 0.62
< 0.62
30CTQ035
30CTQ040
30CTQ045
35
40
45
35
40
45
Max. average forward current,
Dauergrenzstrom
TC = 127°C
TC = 127°C
IFAV
IFAV
15 A 2)
30 A 3)
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
TA = 25°C
TA = 25°C
IFRM
IFSM
i2t
53 A 4)
Peak forward surge current, 50 Hz half sine-wave
Stoßstrom für eine 50 Hz Sinus-Halbwelle
265 A 1)
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
351 A2s 1)
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
-50...+175°C
-50...+175°C
Tj
TS
1
Per diode – Pro Diode
2
3
4
50% Duty Cycle, Rectangular waveform - 50% Duty Cycle, Rechteckwellenform
Per device (parallel operation) − Pro Bauteil (Parallelbetrieb)
Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C
© Diotec Semiconductor AG
http://www.diotec.com/
1
30CTQ035 ... 30CTQ045
Characteristics
Kennwerte
Leakage current
Sperrstrom
Tj = 25°C VR = VRRM
Tj = 125°C VR = VRRM
< 50 µA
< 15 mA
IR
RthC
CJ
Thermal resistance junction to case
Wärmewiderstand Sperrschicht – Gehäuse
< 3.25 K/W 1)
900 pF 1)
Maximum Junction Capacitance
Maximale Sperrschichtkapazität
103
120
[%]
[A]
102
100
Tj = 175°C
80
Tj = 125°C
10
60
Tj = 25°C
40
1
IF
20
IFAV
0
30CTQ0xx
10-1
VF 0.4
0.8
[V] 1.4
0
0
TA
100
150
50
[°C]
Rated forward current versus ambient temperature1)
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
Zul. Richtstrom in Abh. von der Umgebungstemp.1)
102
Tj = 175°C
[mA]
10
Tj = 150°C
Tj = 125°C
Tj = 100°C
1
10-1
IR
Tj = 75°C
Tj = 50°C
Tj = 25°C
80
10-2
VRRM
[%]
0
40
60
100
Typ. instantaneous leakage current vs. rev. voltage
Typ. Sperrstrom (Augenblickswert) ü. Sperrspannung
1
Per diode – Pro Diode
2
http://www.diotec.com/
© Diotec Semiconductor AG
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