2N3905 [DIOTEC]
Si-Epitaxial PlanarTransistors; 硅外延PlanarTransistors
| 型号： | 2N3905 |
| 厂家： | 
DIOTEC SEMICONDUCTOR |
| 描述： | Si-Epitaxial PlanarTransistors |
| 文件： | 总2页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N3905, 2N3906
Switching Transistors
PNP
PNP
Si-Epitaxial PlanarTransistors
Version 2004-01-20
Power dissipation – Verlustleistung
625 mW
Plastic case
Kunststoffgehäuse
TO-92
(10D3)
Weight approx. – Gewicht ca.
0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Pinning
Standard Lieferform gegurtet in Ammo-Pack
1 = C 2 = B 3 = E
Maximum ratings (TA = 25/C)
Grenzwerte (TA = 25/C)
2N3905, 2N3906
40 V
Collector-Emitter-voltage
B open
E open
C open
- VCE0
- VCE0
- VEB0
Ptot
Collector-Base-voltage
40 V
Emitter-Base-voltage
5 V
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
625 mW 1)
100 mA
200 mA
150/C
- IC
Peak collector current – Kollektorspitzenstrom
Junction temp. – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
- ICM
Tj
TS
- 55…+ 150/C
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
Collector saturation volt. – Kollektor-Sättigungsspannung
- IC = 10 mA, - IB = 1 mA
- IC = 50 mA, - IB = 5 mA
- VCEsat
- VCEsat
–
–
–
–
250 mV
400 mV
Base saturation voltage – Basis-Sättigungsspannung
- IC = 10 mA, - IB = 1 mA
- IC = 50 mA, - IB = 5 mA
- VBEsat
–
–
–
–
850 mV
950 mV
- VBEsat
- ICEV
- IEBV
Collector cutoff current – Kollektorreststrom
- VCE = 30 V, - VEB = 3 V
–
–
–
–
50 nA
50 nA
Emitter cutoff current – Emitterreststrom
- VCE = 30 V, - VEB = 3 V
1
)
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
32
General Purpose Transistors
2N3905, 2N3906
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis
2N3905
2N3906
hFE
hFE
30
60
–
–
–
–
- VCE = 1 V, - IC = 0.1 mA
- VCE = 1 V, - IC = 1 mA
- VCE = 1 V, - IC = 10 mA
- VCE = 1 V, - IC = 50 mA
- VCE = 1 V, - IC = 100 mA
2N3905
2N3906
hFE
hFE
40
80
–
–
–
–
2N3905
2N3906
hFE
hFE
50
100
–
–
150
300
2N3905
2N3906
hFE
hFE
30
60
–
–
–
–
2N3905
2N3906
hFE
hFE
15
30
–
–
–
–
Gain-Bandwidth Product – Transitfrequenz
- VCE = 20 V, - IC = 10 mA,
f = 100 MHz
2N3905
2N3906
fT
fT
200 MHz
250 MHz
–
–
–
–
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 5 V, IE = ie = 0, f = 100 kHz CCB0
Emitter-Base Capacitance – Emitter-Basis-Kapazität
–
–
–
–
4.5 pF
10 pF
- VEB = 0.5 V, IC = ic = 0, f = 100 kHz
Noise figure – Rauschzahl
CEB0
- VCE = 5 V, - IC = 100 :A
RG = 1 kS f = 10 Hz ...15.7 kHz 2N3906
2N3905
F
F
–
–
–
–
5 dB
4 dB
Switching times – Schaltzeiten
turn-on time
turn-off time
ton
toff
–
–
–
–
70
300
I
I
Con = 10 mA,
Bon = - IBoff = 1 mA
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
200 K/W 1)
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
2N3903, 2N3904
1
)
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
33
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