SF18 [DIOTECH]
SUPER FAST RECOVERY SILICON RECTIFIER; 超快速恢复硅整流型号: | SF18 |
厂家: | DIOTECH COMPANY. |
描述: | SUPER FAST RECOVERY SILICON RECTIFIER |
文件: | 总2页 (文件大小:619K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SF11 THRU SF18
SUPER FAST RECOVERY SILICON RECTIFIER
Reverse Voltage - 50 to 600 Volts
Forward Current - 1.0 Ampere
FEATURES
DO-41
●
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
●
Super fast switching for high efficiency
Low reverse leakage
●
●
●
1.0 (25.4)
MIN.
High forward surge current capability
High temperature soldering guaranteed:
0.107(2.7)
0.080(2.0)
DIA.
250 C/10 seconds,0.375”(9.5mm) lead length,
5 lbs. (2.3kg) tension
0.205(5.2)
0.166(4.2)
MECHANICAL DATA
Case: JEDEC DO-41 molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
1.0 (25.4)
MIN.
Polarity: Color band denotes cathode end
Mounting Position: Any
0.034(0.9)
0.028(0.7)
DIA.
Weight:0.012 ounce, 0.33 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
UNITS
Characteristic
SF11 SF12 SF13 SF14 SF15 SF16 SF18
Maximum repetitive peak reverse voltage
Maximum RMS voltage
50
35
50
100
70
150 200
105 140
150 200
300
210
300
400
280
400
600
420
600
V
V
V
VRRM
VRMS
VDC
100
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at TA=55 C
Peak forward surge current
I(AV)
1.0
A
IFSM
VF
30.0
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
A
0.95
1.25
10.0
Maximum instantaneous forward voltage at 1.0A
V
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time
TA=25 C
TA=100 C
(NOTE 1)
5.0
50.0
µA
IR
ns
trr
35
Typical junction capacitance (NOTE 2)
CJ
R JA
pF
C/W
C
15.0
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
60.0
TJ,TSTG
-65 to +150
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
SF11 THRU SF18
RATINGS AND CHARACTERISTIC CURVES
FIG. 1- FORWARD CURRENT DERATING CURVE
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
30
25
20
15
1.0
0.8
0.6
0.4
0.2
0
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
10
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
25
50
75
100
125
150
175
5.0
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
1,000
100
10
20
10
TJ=25 C
PULSE WIDTH=300 ms
1%DUTY CYCLE
1
0.1
TJ=100 C
1
SF11-SF14
SF15-SF18
0.1
0.01
0.01
TJ=25 C
0
0.4
0.8
1.2
1.6
1.8
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLEAGE,
VOLTS
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 5-TYPICAL JUNCTION CAPACITANCE
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
200
100
100
10
1
TJ=25 C
10
SF11-SF14
SF15-SF18
0.1
0.01
0.1
1
10
100
1
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
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