MURF1630CT [DIOTECH]

SUPER FAST RECOVERY SILICON RECTIFIER; 超快速恢复硅整流
MURF1630CT
型号: MURF1630CT
厂家: DIOTECH COMPANY.    DIOTECH COMPANY.
描述:

SUPER FAST RECOVERY SILICON RECTIFIER
超快速恢复硅整流

超快速恢复二极管
文件: 总2页 (文件大小:851K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MURF1605CT THRU MURF1660CT  
SUPER FAST RECOVERY SILICON RECTIFIER  
Reverse Voltage - 50 to 600 Volts  
Forward Current - 16.0 Ampere  
FEATURES  
ITO-220AB  
The plastic package carries Underwriters Laboratory  
Flammability Classification 94V-0  
.138(3.5)  
.122(3.1)  
.118(3.0)  
.102(2.6)  
.189(4.8)  
.173(4.4)  
.118(3.0)  
.106(2.7)  
Super fast switching for high efficiency  
Low reverse leakage  
.406(10.3)  
.386(9.8)  
High forward surge current capability  
High temperature soldering guaranteed:  
250 C/10 seconds,0.25(6.35mm) from case  
.610(15.5)  
.571(14.5)  
.157(4.0)  
.142(3.6)  
MECHANICAL DATA  
Case: JEDEC ITO-220AB molded plastic body  
Terminals: Plated leads, solderable per MIL-STD-750,  
Method 2026  
High temperature soldering guaranteed:  
250oC/10 seconds, 0.25" (6.35mm) from case  
Polarity: As marked  
Mounting Position: Any  
Mounting Torque: 10 in-lbs maximum  
Weight: 0.08 ounce, 2.24 grams  
.071(1.8)  
.055(1.4)  
.571(14.5)  
.531(13.5)  
.114(2.9)  
.098(2.5)  
.059(1.5)  
.043(1.1)  
.030(0.76)  
.020(0.51)  
.112(2.84)  
.088(2.24)  
.030(0.76)  
.020(0.51)  
Dimensions in inches and (millimeters)  
PIN 1 -  
PIN 3 -  
+
PIN 2  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 C ambient temperature unless otherwise specified.  
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.  
MURF  
1620CT  
MURF  
MURF  
MURF  
MURF  
MURF  
MURF  
Characteristic  
Symbol  
Unit  
1605CT 1610CT 1615CT  
1630CT 1640CT 1660CT  
RRM  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
RWM  
50  
35  
100  
70  
150  
105  
200  
300  
210  
400  
280  
600  
420  
V
R
V
R(RMS)  
RMS Reverse Voltage  
V
140  
16  
V
A
Average Rectified Output Current  
O
I
@TC = 105°C  
Non-Repetitive Peak Forward Surge  
Current 8.3ms Single half sine-wave  
superimposed on rated load (JEDEC Method)  
FSM  
I
125  
A
FM  
V
Forward Voltage  
@IF = 8.0A  
0.95  
1.3  
1.7  
V
Peak Reverse Current  
At Rated DC Blocking Voltage @TA = 125°C  
@TA = 25°C  
10  
500  
RM  
I
µA  
rr  
Reverse Recovery Time (Note 1)  
t
35  
80  
50  
60  
nS  
pF  
°C  
j
Typical Junction Capacitance (Note 2)  
Operating and Storage Temperature Range  
C
j
STG  
T, T  
-65 to +150  
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
MURF1605CT THRU MURF1660CT  
RATINGS AND CHARACTERISTIC CURVES  
20  
100  
16  
12  
8
1605 - 1620  
1630 - 1640  
10  
1660  
1.0  
4
Pulse width = 300µs  
2% duty cycle  
0.1  
0
0
0.6  
1.2  
1.8  
0
50  
100  
150  
TC, CASE TEMPERATURE (°C)  
Fig. 1 Forward Current Derating Curve  
VF, INSTANTANEOUS FORWARD VOLTAGE (V)  
Fig. 2 Typical Forward Characteristics  
225  
150  
400  
100  
T = 25°C  
f = 1.0MHz  
j
8.3 ms single half-sine-wave  
JEDEC method  
MURF1605CT  
-
MURF1620CT  
MURF1640CT-  
MURF1660CT  
75  
10  
0
1
0.1  
1.0  
10  
100  
100  
10  
VR, REVERSE VOLTAGE (V)  
NUMBER OF CYCLES AT 60Hz  
Fig. 3 Maximum Non-Repetitive Surge Current  
Fig. 4 Typical Junction Capacitance  
trr  
+0.5A  
50NI (Non-inductive)  
10NI  
Device  
Under  
Test  
(-)  
0A  
(+)  
Pulse  
Generator  
(Note 2)  
50V DC  
Approx  
-0.25A  
(-)  
1.0Ω  
NI  
(+)  
Oscilloscope  
(Note 1)  
Notes:  
-1.0A  
1. Rise Time = 7.0ns max. Input Impedance = 1.0M, 22pF.  
2. Rise Time = 10ns max. Input Impedance = 50.  
Set time base for 5/10ns/cm  
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit  

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