MURF1630CT [DIOTECH]
SUPER FAST RECOVERY SILICON RECTIFIER; 超快速恢复硅整流型号: | MURF1630CT |
厂家: | DIOTECH COMPANY. |
描述: | SUPER FAST RECOVERY SILICON RECTIFIER |
文件: | 总2页 (文件大小:851K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MURF1605CT THRU MURF1660CT
SUPER FAST RECOVERY SILICON RECTIFIER
Reverse Voltage - 50 to 600 Volts
Forward Current - 16.0 Ampere
FEATURES
ITO-220AB
● The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
.138(3.5)
.122(3.1)
.118(3.0)
.102(2.6)
.189(4.8)
.173(4.4)
.118(3.0)
.106(2.7)
● Super fast switching for high efficiency
● Low reverse leakage
.406(10.3)
.386(9.8)
● High forward surge current capability
● High temperature soldering guaranteed:
250 C/10 seconds,0.25”(6.35mm) from case
.610(15.5)
.571(14.5)
.157(4.0)
.142(3.6)
MECHANICAL DATA
● Case: JEDEC ITO-220AB molded plastic body
● Terminals: Plated leads, solderable per MIL-STD-750,
Method 2026
● High temperature soldering guaranteed:
250oC/10 seconds, 0.25" (6.35mm) from case
● Polarity: As marked
● Mounting Position: Any
● Mounting Torque: 10 in-lbs maximum
● Weight: 0.08 ounce, 2.24 grams
.071(1.8)
.055(1.4)
.571(14.5)
.531(13.5)
.114(2.9)
.098(2.5)
.059(1.5)
.043(1.1)
.030(0.76)
.020(0.51)
.112(2.84)
.088(2.24)
.030(0.76)
.020(0.51)
Dimensions in inches and (millimeters)
PIN 1 -
PIN 3 -
+
PIN 2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MURF
1620CT
MURF
MURF
MURF
MURF
MURF
MURF
Characteristic
Symbol
Unit
1605CT 1610CT 1615CT
1630CT 1640CT 1660CT
RRM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RWM
50
35
100
70
150
105
200
300
210
400
280
600
420
V
R
V
R(RMS)
RMS Reverse Voltage
V
140
16
V
A
Average Rectified Output Current
O
I
@TC = 105°C
Non-Repetitive Peak Forward Surge
Current 8.3ms Single half sine-wave
superimposed on rated load (JEDEC Method)
FSM
I
125
A
FM
V
Forward Voltage
@IF = 8.0A
0.95
1.3
1.7
V
Peak Reverse Current
At Rated DC Blocking Voltage @TA = 125°C
@TA = 25°C
10
500
RM
I
µA
rr
Reverse Recovery Time (Note 1)
t
35
80
50
60
nS
pF
°C
j
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
C
j
STG
T, T
-65 to +150
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
MURF1605CT THRU MURF1660CT
RATINGS AND CHARACTERISTIC CURVES
20
100
16
12
8
1605 - 1620
1630 - 1640
10
1660
1.0
4
Pulse width = 300µs
2% duty cycle
0.1
0
0
0.6
1.2
1.8
0
50
100
150
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
225
150
400
100
T = 25°C
f = 1.0MHz
j
8.3 ms single half-sine-wave
JEDEC method
MURF1605CT
-
MURF1620CT
MURF1640CT-
MURF1660CT
75
10
0
1
0.1
1.0
10
100
100
10
VR, REVERSE VOLTAGE (V)
NUMBER OF CYCLES AT 60Hz
Fig. 3 Maximum Non-Repetitive Surge Current
Fig. 4 Typical Junction Capacitance
trr
+0.5A
50Ω NI (Non-inductive)
10Ω NI
Device
Under
Test
(-)
0A
(+)
Pulse
Generator
(Note 2)
50V DC
Approx
-0.25A
(-)
1.0Ω
NI
(+)
Oscilloscope
(Note 1)
Notes:
-1.0A
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
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