ES1E [DIOTECH]
SURFACE MOUNT SUPER FAST RECTIFIER; 表面装载超快速整流器
| 型号： | ES1E |
| 厂家： | 
DIOTECH COMPANY. |
| 描述： | SURFACE MOUNT SUPER FAST RECTIFIER |
| 文件： | 总2页 (文件大小：801K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ES1A THRU ES1J
SURFACE MOUNT SUPER FAST RECTIFIER
Reverse Voltage - 50 to 600 Volts
Forward Current - 1.0 Ampere
FEATURES
SMA(DO-214AC)
● The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
● For surface mounted applications
● Super fast switching for high efficiency
● Low reverse leakage
● Built-in strain relief,ideal for automated placement
● High forward surge current capability
● High temperature soldering guaranteed:
250℃/10 seconds at terminals
.062(1.60)
.055(1.40)
.114(2.90)
.098(2.50)
.181(4.60)
.157(4.00)
.012(.305)
.006(.152)
.103(2.62)
.079(2.00)
MECHANICAL DATA
Case: JEDEC DO-214AC molded plastic body
Terminals: Solder plated , solderable per MIL-STD-750,
Method 2026
.008(.203)
.002(.051)
.060(1.52)
.030(0.76)
.208(5.28)
.188(4.80)
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight : 0.064 grams (approx.)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
ES1A
ES1B
ES1C
ES1E
ES1G
ES1J
ES1D
Characteristic
Symbol
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
V
50
35
100
70
150
105
200
300
210
400
280
600
420
V
R
RMS Reverse Voltage
VR(RMS)
IO
140
1.0
V
A
Average Rectified Output Current
@TC = 100°C
Non-Repetitive Peak Forward Surge
Current 8.3ms Single half sine-wave
superimposed on rated load (JEDEC Method)
IFSM
30
A
Forward Voltage
@IF = 1.0A
VFM
IRM
0.95
1.3
1.7
V
Peak Reverse Current
At Rated DC Blocking Voltage @TA = 125°C
@TA = 25°C
5.0
500
µA
35
10
Reverse Recovery Time (Note 1)
trr
Cj
nS
pF
°C
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
ES1A THRU ES1J
RATINGS AND CHARACTERISTIC CURVES
1.00
Tj = 25°C
Single phase half wave
Resistive or Inductive load
Pulse width = 300µs
10
0.75
0.50
0.25
- ES1G
- ES1D
1.0
ES1J
0.1
0.01
100
0
0
25
TL,
50
75
100 125
150 175
( ° C)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
TEMPERATURE
Fig. 1 Forward Current Derating Curve
30
Tj = 25°C
f = 1.0MHz
Pulse width
8.3 ms single half-sine-wave
(JEDEC method)
20
10
0
10
1
1
10
100
1
10
100
VR, REVERSE VOLTAGE (V)
NUMBER OF CYCLES AT 60Hz
Fig. 4 Typical Junction Capacitance
trr
+0.5A
50Ω NI (Non-inductive)
10Ω NI
Device
Under
Test
(-)
0A
(+)
(-)
Pulse
Generator
(Note 2)
50V DC
Approx
-0.25A
1.0Ω
NI
(+)
Oscilloscope
(Note 1)
Notes:
-1.0A
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
相关型号：
ES1E-G
Rectifier Diode, Schottky, 1 Element, 1A, 300V V(RRM), Silicon, DO-214AC, GREEN, PLASTIC, SMA, 2 PIN
SENSITRON
ES1E-GT3
Rectifier Diode, Schottky, 1 Element, 1A, 300V V(RRM), Silicon, DO-214AC, GREEN, PLASTIC, SMA, 2 PIN
SENSITRON
ES1E-T3
Rectifier Diode, 1 Element, 1A, 300V V(RRM), Silicon, DO-214AC, PLASTIC, SMA, 2 PIN
SENSITRON
ES1E-T3-LF
Rectifier Diode, 1 Element, 1A, 300V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN
WTE
©2020 ICPDF网 联系我们和版权申明