1N4007 [DIOTECH]
GENERAL PURPOSE SILICON RECTIFIER; 通用硅整流
| 型号： | 1N4007 |
| 厂家： | 
DIOTECH COMPANY. |
| 描述： | GENERAL PURPOSE SILICON RECTIFIER |
| 文件： | 总2页 (文件大小：623K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N4001 THRU 1N4007
GENERAL PURPOSE SILICON RECTIFIER
Reverse Voltage - 50 to 1000 Volts
Forward Current - 1.0 Ampere
FEATURES
DO-41
●
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Construction utilizes void-free
●
molded plastic technique
1.0 (25.4)
MIN.
●
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
●
●
0.107 (2.7)
0.080 (2.0)
DIA.
250 C/10 seconds,0.375
”(9.5mm) lead length,
5 lbs. (2.3kg) tension
0.205 (5.2)
0.160(4.1)
MECHANICAL DATA
1.0 (25.4)
MIN.
Case: JEDEC DO-41 molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
0.034 (0.86)
0.028 (0.71)
DIA.
Polarity: Color band denotes cathode end
Mounting Position: Any
Dimensions in inches and (millimeters)
Weight:0.012 ounce, 0.33 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
1N
4006
1N
4007
1N
1N
1N
1N
1N
SYMBOLS
Characteristic
UNITS
4001 4002 4003 4004 4005
Maximum repetitive peak reverse voltage
Maximum RMS voltage
50
35
50
100
70
200 400
140 280
200 400
600
420
600
800 1000
560 700
800 1000
V
V
V
V
RRM
RMS
V
100
Maximum DC blocking voltage
V
DC
Maximum average forward rectified current
I
(AV)
1.0
A
0.375”(9.5mm) lead length at TA=75 C
Peak forward surge current
I
FSM
30.0
1.1
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
A
V
F
Maximum instantaneous forward voltage at 1.0A
V
Maximum DC reverse current
at rated DC blocking voltage
T
A
=25 C
5.0
50.0
µA
I
R
T
A=100 C
Typical junction capacitance (NOTE 1)
C
J
pF
C/W
C
15.0
50.0
Typical thermal resistance (NOTE 2)
Operating junction and storage temperature range
R
JA
STG
T
J
,
T
-65 to +150
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375” (9.5mm)lead length,P.C.B. mounted
1N4001 THRU 1N4007
RATINGS AND CHARACTERISTIC CURVES
FIG. 1- FORWARD CURRENT DERATING CURVE
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
30
25
20
15
1.0
0.8
0.6
0.4
0.2
0
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
10
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
25
50
75
100
125
150
175
5.0
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
1,000
100
10
20
10
TJ=150 C
TJ=100 C
1
0.1
TJ=25 C
PULSE WIDTH=300 ms
1
1%DUTY CYCLE
0.1
0.01
0.01
TJ=25 C
0.6
0.8
1.0
1.2
1.4
1.5
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLEAGE,
VOLTS
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 5-TYPICAL JUNCTION CAPACITANCE
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
200
100
100
10
1
TJ=25 C
10
0.1
0.01
0.1
1
10
100
1
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
相关型号：
1N4007-AP
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2
MCC
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