ZXT2MATA [DIODES]
20V PNP LOW SATURATION SWITCHING TRANSISTOR;
| 型号： | ZXT2MATA |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 20V PNP LOW SATURATION SWITCHING TRANSISTOR 开关 |
| 文件： | 总7页 (文件大小：160K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A Product Line of
Diodes Incorporated
ZXT2MA
20V PNP LOW SATURATION SWITCHING TRANSISTOR
Features and Benefits
Mechanical Data
•
•
•
•
•
•
•
Case: DFN322
•
•
•
•
•
•
•
•
•
•
BVCEO > -20V
C = -3.5A Continuous Collector Current
Low Saturation Voltage (-220mV @ -1A)
RSAT = 64 mΩ for a low equivalent On-Resistance
hFE specified up to -6A for high current gain hold up
I
Case material: Molded Plastic. “Green” Molding Compound.
Terminals: Matte Tin Finish.
Nominal package height: 0.85mm
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Weight: 0.01 grams (approximate)
RθJA efficient, 60% lower than SOT23
4mm2 footprint, 50% smaller than SOT23
Lead Free, RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Applications
•
•
•
•
•
MOSFET Gate Driving
DC-DC Converters
Charging Circuits
Power switches
Motor Control
DFN322
B
E
C
B
E
C
Top View
Device Symbol
Bottom View
Pin Out
Bottom View
Ordering Information (Note 3)
Product
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
ZXT2MATA
ZXT2MATC
S2
S2
7
13
8
8
3,000
10,000
Notes:
1. No purposefully added lead.
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
S2 = Product Type Marking code
S2
Top View
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April 2011
© Diodes Incorporated
ZXT2MA
Document Number: DS35302 Rev. 1 - 2
A Product Line of
Diodes Incorporated
ZXT2MA
Maximum Ratings
Parameter
Symbol
VCBO
VCEO
VEBO
ICM
Limit
-25
-20
-7.5
-6
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
V
V
A
(Note 4)
(Note 5)
-3.5
-4.0
-1
Continuous Collector Current
Base Current
A
A
IC
IB
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
1.5
12
2.45
19.6
83
Unit
(Note 4)
(Note 5)
W
mW/°C
Power Dissipation
Linear Derating Factor
PD
(Note 4)
(Note 5)
(Note 6)
Thermal Resistance, Junction to Ambient
°C/W
Rθ
JA
51
16.8
Thermal Resistance, Junction to Lead
°C/W
°C
Rθ
JL
Operating and Storage Temperature Range
-55 to +150
TJ, TSTG
Notes:
4. For a device surface mounted on 31mm x 31mm (10cm2) FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The entire exposed collector pad is attached to the heatsink.
5. Same as note (4), except the device is measured at t < 5 sec.
6. Thermal resistance from junction to solder-point (at the end of the collector lead).
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April 2011
© Diodes Incorporated
ZXT2MA
Document Number: DS35302 Rev. 1 - 2
A Product Line of
Diodes Incorporated
ZXT2MA
Thermal Characteristics
2.0
1.5
1.0
0.5
0.0
10
VCE(SAT)
10 sqcm
Single
1oz Cu
Limited
Tamb=25°C
1
DC
1s
100ms
10ms
0.1
1ms
100us
Single Pulse, Tamb=25°C
0.01
0.1
1
10
0
25
50
75
100
125
150
VCE Collector-Emitter Voltage (V)
Temperature (°C)
Derating Curve
Safe Operating Area
225
200
175
150
125
100
75
10 sqcm
Single
1oz Cu
80
60
40
20
0
D=0.5
1oz copper
Single Pulse
D=0.05
D=0.1
D=0.2
50
25
2oz copper
10
0
0.1
100µ 1m 10m 100m
1
10
100
1k
1
100
Pulse Width (s)
Board Cu Area (sqcm)
Thermal Resistance v Board Area
Transient Thermal Impedance
3.5
Tamb=25°C
Tj max=150°C
Continuous
2oz copper
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1oz copper
0.1
1
10
100
Board Cu Area (sqcm)
Power Dissipation v Board Area
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www.diodes.com
April 2011
© Diodes Incorporated
ZXT2MA
Document Number: DS35302 Rev. 1 - 2
A Product Line of
Diodes Incorporated
ZXT2MA
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 7)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Min
-25
Typ
-35
-25
-8.5
-
Max
-
-
Unit
V
Test Condition
IC = -100µA
IC = -10mA
IE = -100µA
VCB = -20V
VEB = -6V
-20
V
-7.5
-
V
-
-25
-25
-25
-
nA
nA
nA
Emitter Cutoff Current
-
-
IEBO
Collector Emitter Cutoff Current
-
-
ICES
VCES = -16V
300
475
450
230
30
IC = -10mA, VCE = -2V
300
-
I
I
I
I
I
I
I
I
C = -100mA, VCE = -2V
Static Forward Current Transfer Ratio
(Note 7)
-
hFE
150
-
C = -2A, VCE = -2V
15
-
-
C = -6A, VCE = -2V
-19
-170
-190
-240
-225
-0.87
-1.01
21
-30
-220
-250
-350
-300
-0.95
-1.075
30
C =- 0.1A, IB = -10mA
C = -1A, IB = -20mA
C = -1.5A, IB = -50mA
C = -2.5A, IB = -150mA
C = -3.5A, IB = -350mA
-
Collector-Emitter Saturation Voltage
(Note 7)
-
mV
VCE(sat)
-
-
Base-Emitter Turn-On Voltage (Note 7)
Base-Emitter Saturation Voltage (Note 7)
Output Capacitance
-
V
V
VBE(on)
VBE(sat)
Cobo
IC = -3.5A, VCE = -2V
IC = -3.5A, IB = -350mA
VCB = -10V. f = 1MHz
-
-
pF
V
CE = -10V, IC = -50mA,
Transition Frequency
150
180
-
MHz
fT
f = 100MHz
Turn-On Time
Turn-Off Time
-
-
40
-
-
ns
ns
ton
toff
VCC = -10V, IC = -1A
IB1 = IB2 = -10mA
670
Notes:
7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
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April 2011
© Diodes Incorporated
ZXT2MA
Document Number: DS35302 Rev. 1 - 2
A Product Line of
Diodes Incorporated
ZXT2MA
Typical Electrical Characteristics
1
0.25
0.20
0.15
0.10
0.05
0.00
IC/IB=50
Tamb=25°C
100°C
25°C
100m
IC/IB=100
IC/IB=50
10m
-55°C
IC/IB=10
1m
IC10mCollec1to0r0mCurrent (A)
IC10mCollec1to0r0mCurrent (A)
1
10
1m
1
10
VCE(SAT) v IC
VCE(SAT) v IC
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
630
540
450
360
270
180
90
VCE=2V
IC/IB=50
1.0
0.8
0.6
0.4
100°C
25°C
-55°C
25°C
-55°C
100°C
0
1m
10m
100m
1
10
1m
1
10
IC10mCollec1to0r0mCurrent (A)
IC Collector Current (A)
hFE v IC
VBE(SAT) v IC
VCE=2V
1.0
0.8
0.6
0.4
0.2
-55°C
25°C
100°C
IC10mCollec1to0r0mCurrent (A)
1m
1
10
VBE(ON) v IC
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April 2011
© Diodes Incorporated
ZXT2MA
Document Number: DS35302 Rev. 1 - 2
A Product Line of
Diodes Incorporated
ZXT2MA
Package Outline Dimensions
e
e
D
b (3x)
DFN322
Dim Min Max Typ
L (3x)
E2
A
A1
0.800 1.00 0.850
0.050
-
-
A3 0.153 0.253 0.203
E
b
D
0.180 0.300 0.230
1.900 2.100 2.000
E4
D2 1.220 1.420 1.320
e
-
-
0.650
E
1.900 2.100 2.000
E2 0.780 0.990 0.880
E4 0.480 0.680 0.580
D2
L
0.300 0.500 0.400
A1
A3
A
All Dimensions in mm
Suggested Pad Layout
Value
(in mm)
0.65
C
C
X (3x)
Dimensions
C
G
Y (2x)
0.20
G
X
0.35
X1
Y
Y1
Y2
Y3
Y4
1.52
0.55
0.98
0.47
0.63
2.20
Y4
Y1
Y3
Y2
X1
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April 2011
© Diodes Incorporated
ZXT2MA
Document Number: DS35302 Rev. 1 - 2
A Product Line of
Diodes Incorporated
ZXT2MA
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2011, Diodes Incorporated
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April 2011
© Diodes Incorporated
ZXT2MA
Document Number: DS35302 Rev. 1 - 2
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DIODES
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