ZTX653 [DIODES]
NPN SILICON PLANAR MEDIUM POWER TRANSISTORS; NPN硅平面中功率晶体管
| 型号： | ZTX653 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | NPN SILICON PLANAR MEDIUM POWER TRANSISTORS |
| 文件： | 总3页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN SILICON PLANAR
ZTX652
ZTX653
MEDIUM POWER TRANSISTORS
ISSUE 2 JULY 94
FEATURES
*
*
*
*
100 Volt VCEO
2 Amp continuous current
Low saturation voltage
Ptot=1 Watt
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
ZTX652
100
ZTX653
120
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
V
A
A
80
100
5
6
2
Peak Pulse Current
Continuous Collector Current
IC
Power Dissipation at Tamb=25°C
derate above 25°C
Ptot
1
5.7
W
mW/°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
ZTX652
Tj:Tstg
-55 to +200
°C
= 25°C unless otherwise stated).
amb
ZTX653
PARAMETER
SYMBOL
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Collector-Base
Breakdown
Voltage
V(BR)CBO 100
120
100
5
V
V
V
IC=100µA
IC=10mA*
IE=100µA
Collector-Emitter
Breakdown
Voltage
V(BR)CEO 80
Emitter-Base
Breakdown
Voltage
V(BR)EBO
5
Collector Cut-Off
Current
ICBO
0.1
10
VCB=80V
VCB=100V
VCB=80V,T =100°C
VCB=100V,T =100°C
µA
µA
µA
µA
0.1
10
Emitter Cut-Off
Current
IEBO
0.1
0.1
VEB=4V
µA
Collector-Emitter
Saturation Voltage
VCE(sat)
VBE(sat)
VBE(on)
0.13 0.3
0.23 0.5
0.13 0.3
0.23 0.5
V
V
IC=1A, IB=100mA*
IC=2A, IB=200mA*
Base-Emitter
Saturation Voltage
0.9
1.25
0.9
1.25
V
IC=1A, IB=100mA*
Base-Emitter
Turn-On Voltage
0.8
1
0.8
1
V
IC=1A, VCE=2V*
3-222
ZTX652
ZTX653
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
ZTX652
ZTX653
PARAMETER
SYMBOL
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Transition
Frequency
fT
140
175
140
175
MHz IC=100mA, VCE=5V
f=100MHz
Switching Times
ton
toff
Output Capacitance Cobo
80
80
ns
ns
pF
IC=500mA, VCC=10V
IB1=IB2=50mA
1200
1200
30
30
VCB=10V f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
UNIT
Thermal Resistance: Junction to Ambient1
Junction to Ambient2
Junction to Case
Rth(j-amb)1
Rth(j-amb)2
Rth(j-case)
175
116
70
°C/W
°C/W
°C/W
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
2.5
2.0
200
D=1 (D.C.)
t
1
D=t1/tP
Case temperature
t
P
1.5
100
D=0.5
1.0
0.5
0
D=0.2
D=0.1
Single Pulse
0
0.0001 0.001
-40 -20
0
20
0.01
0.1
1
10
100
40 60 80 100 120 140 160 180 200
T -Temperature (°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-223
ZTX652
ZTX653
TYPICAL CHARACTERISTICS
0.6
0.5
0.4
225
175
IC/IB=10
0.3
0.2
0.1
VCE=2V
125
75
0
0.0001
0.001
25
0.01
0.1
1
10
0.01
0.1
1
10
IC - Collector Current (Amps)
IC - Collector Current (Amps)
FE
C
v I
h
VCE(sat) v IC
1.4
1.2
1.0
1.2
1.0
VCE=2V
IC/IB=10
0.8
0.6
0.4
0.8
0.6
0.001 0.01
0.001 0.01
0.0001
0.1
1
10
0.0001
0.1
1
10
IC - Collector Current (Amps)
BE(sat)
IC - Collector Current (Amps)
C
v I
V
BE(on)
V
C
v I
Single Pulse Test at Tamb=25°C
10
td
tr
tf
IB1=IB2=IC/10
ts
ns
ns
280
240
200
160
2800
1
2400
2000
ts
tf
D.C.
1s
100ms
10ms
1.0ms
100µs
1600
1200
800
120
80
40
0
0.1
td
tr
400
0
0.01
0.1
1
0.01
0.1
1
10
100
VCE - Collector Voltage (Volts)
IC - Collector Current (Amps)
Safe Operating Area
Switching Speeds
3-224
相关型号：
ZTX653DCSM
NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
SEME-LAB
ZTX653DCSM_02
NPN/PNP DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICTIONS
SEME-LAB
ZTX653M1
Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, TO-92 COMPATIBLE, E-LINE PACKAGE-3
ZETEX
ZTX653STZ
Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3
DIODES
©2020 ICPDF网 联系我们和版权申明