SBR40U100CTF [DIODES]
Rectifier Diode, 1 Phase, 2 Element, 40A, 100V V(RRM), Silicon, TO-220AB, PLASTIC, ITO-220, 3 PIN;
| 型号： | SBR40U100CTF |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Rectifier Diode, 1 Phase, 2 Element, 40A, 100V V(RRM), Silicon, TO-220AB, PLASTIC, ITO-220, 3 PIN 局域网 功效 二极管 |
| 文件： | 总2页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SBR40U100CT - Prel
SBR40U100CTF - Prel
SBR40U100CTI - Prel
SBR40U100CTB - Prel
Using state-of-the-art SBR IC process technology,
the following features are made possible in a single device:
Major ratings and characteristics
Device optimized for low forward voltage drop to
maximize efficiency in Power Supply applications
Characteristics
F(AV) Rectangular Waveform
Values
Units
A
I
40
VRRM
100
V
VF@20A, Tj=125OC
0.64
V, typ
OC
Tj (operating/storage)
-65 to 175
ELECTRICAL:
MECHANICAL:
* Ultra-Low Forward Voltage Drop
* Reliable High Temperature Operation
* Super Barrier Design
* Molded Plastic TO-220AB, TO-262, TO-263, and
ITO-220 packages
* Softest, fast switching capability
* 175OC Operating Junction Temperature
Case Styles
SBR40U100CT
SBR40U100CTF
SBR40U100CTI
SBR40U100CTB
2
2
2
2
Common
Common
Cathode
Common
Cathode
Common
3
3
Cathode
3
Anode
Anode 1
1
3
Anode1
Anode 1 Cathode
Anode
Anode
Anode
Anode
TO-220AB
ITO-220
TO-262
TO-263
________________________________________________________________________________________________
www.apdsemi.com Version 0.0 - Preliminary, April 2006
1
SBR40U100CT - Prel
SBR40U100CTF - Prel
SBR40U100CTI - Prel
SBR40U100CTB - Prel
Maximum Ratings and Electrical Characteristics
(at 25OC unless otherwise specified)
SYMBOL
UNITS
VRM
VRWM
VRRM
DC Blocking Voltage
Working Peak Reverse Voltage
Peak Repetitive Reverse Voltage
100
40
Volts
Average Rectified Forward Current
(Rated VR-20Khz Square Wave) - 50% duty
cycle
IO
Amps
Peak Forward Surge Current - 1/2 60hz
IFSM
IRRM
300
3
Amps
Amps
Peak Repetitive Reverse Surge Current
(2uS-1Khz)
Instantaneous Forward Voltage (per leg)
IF = 20A; TJ = 25OC
IF = 20A; TJ= 125OC
Typ
---
---
Max
0.73
0.67
VF
Volts
Maximum Instantaneous Reverse Current at
Rated VRM
Typ
---
---
Max
0.5
25
*
IR
mA
mA
TJ = 25OC
TJ = 125OC
Maximum Rate of Voltage Change
(at Rated VR)
10,000
dv/dt
V/uS
Maximum Thermal Resistance JC (per leg)
Package = TO-220AB, TO-262, & TO-263
Package = ITO-220
OC/W
OC
2
4
RθJC
Operating and Storage Junction Temperature
TJ
-65 to +175
* Pulse width < 300 uS, Duty cycle < 2%
APD SEMICONDUCTOR reserves the right to make changes without further notice to any products herein. APD SEMICONDUCTOR makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does APD SEMICONDUCTOR assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APD SEMICONDUCTOR data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APD SEMICONDUCTOR does not convey any license
under its patent rights nor the rights of others. APD SEMICONDUCTOR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the APD SEMICONDUCTOR product could create a situation where personal injury or death may occur. Should Buyer
purchase or use APD SEMICONDUCTOR products for any such unintended or unauthorized application, Buyer shall indemnify and hold APD SEMICONDUCTOR and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or
unauthorized use, even if such claim alleges that APD SEMICONDUCTOR was negligent regarding the design or manufacture of the part..
1 Lagoon Drive, Suite 410, Redwood City, CA 94065, USA
Ph: 650 508 8896 FAX: 650 508 8865
Homepage: www.apdsemi.com
email: info@apdsemi.com
________________________________________________________________________________________________
www.apdsemi.com Version 0.0 - Preliminary, April 2006
2
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