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SBR10U100CTI

更新时间：2024-09-18 18:22:05
品牌：DIODES
描述：Rectifier Diode, 1 Phase, 2 Element, 10A, 100V V(RRM), Silicon, TO-262AA, PLASTIC, TO-262, 3 PIN

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SBR10U100CTI 概述

Rectifier Diode, 1 Phase, 2 Element, 10A, 100V V(RRM), Silicon, TO-262AA, PLASTIC, TO-262, 3 PIN 整流二极管

SBR10U100CTI 规格参数

生命周期：Obsolete零件包装代码：TO-262AA
包装说明：PLASTIC, TO-262, 3 PIN针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.69
应用：GENERAL PURPOSE外壳连接：CATHODE
配置：COMMON CATHODE, 2 ELEMENTS二极管元件材料：SILICON
二极管类型：RECTIFIER DIODEJEDEC-95代码：TO-262AA
JESD-30 代码：R-PSIP-T3最大非重复峰值正向电流：150 A
元件数量：2相数：1
端子数量：3最高工作温度：175 °C
最低工作温度：-65 °C最大输出电流：10 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：IN-LINE认证状态：Not Qualified
最大重复峰值反向电压：100 V表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
Base Number Matches：1

SBR10U100CTI 数据手册

通过下载SBR10U100CTI数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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SBR10U100CT  
SBR10U100CTF  
SBR10U100CTI  
SBR10U100CTB  
Using state-of-the-art SBR IC process technology,  
the following features are made possible in a single device:  
Major ratings and characteristics  
Characteristics  
F(AV) Rectangular Waveform  
Values  
10  
Units  
A
Device optimized for high temperature  
Power Supply applications  
I
VRRM  
100  
V
VF@5A, Tj=125OC  
0.53  
V, typ  
OC  
Tj (operating/storage)  
-65 to 175  
ELECTRICAL:  
MECHANICAL:  
* Ultra-Low Forward Voltage Drop  
* Reliable High Temperature Operation  
* Super Barrier Design  
* Molded Plastic TO-220AB, TO-262, TO-263, and  
ITO-220 packages  
* Softest, Fast Switching Capability  
* 175OC Operating Junction Temperature  
Case Styles  
SBR10U100CT  
SBR10U100CTF  
SBR10U100CTI  
SBR10U100CTB  
2
2
2
2
Common  
Common  
Cathode  
Common  
Cathode  
Common  
3
3
Cathode  
3
Anode  
3
Anode 1 Cathode  
Anode  
Anode 1  
Anode 1  
Anode1  
Anode  
Anode  
TO-220AB  
ITO-220  
TO-262  
TO-263  
________________________________________________________________________________________________  
www.apdsemi.com Version 2.0 - April 2006  
1
SBR10U100CT  
SBR10U100CTF  
SBR10U100CTI  
SBR10U100CTB  
Maximum Ratings and Electrical Characteristics  
(at 25OC unless otherwise specified)  
SYMBOL  
UNITS  
VRM  
VRWM  
VRRM  
DC Blocking Voltage  
Working Peak Reverse Voltage  
Peak Repetitive Reverse Voltage  
100  
10  
Volts  
Average Rectified Forward Current  
(Rated VR-20Khz Square Wave) - 50% duty  
cycle  
IO  
Amps  
Peak Forward Surge Current - 1/2 60hz  
IFSM  
IRRM  
150  
3
Amps  
Amps  
Peak Repetitive Reverse Surge Current  
(2uS-1Khz)  
Instantaneous Forward Voltage (per leg)  
IF = 5A; TJ = 25OC  
Typ  
---  
---  
Max  
0.67  
0.82  
0.56  
VF  
Volts  
IF = 10A; TJ = 25OC  
IF = 5A; TJ= 125OC  
---  
Maximum Instantaneous Reverse Current at  
Rated VRM  
Typ  
---  
---  
Max  
0.2  
25  
*
IR  
mA  
mA  
TJ = 25OC  
TJ = 125OC  
Maximum Rate of Voltage Change  
(at Rated VR)  
10,000  
dv/dt  
V/uS  
Maximum Thermal Resistance JC (per leg)  
Package = TO-220AB, TO-262, & TO-263  
Package = ITO-220  
OC/W  
OC  
2
4
RθJC  
Operating and Storage Junction Temperature  
TJ  
-65 to +175  
* Pulse width < 300 uS, Duty cycle < 2%  
________________________________________________________________________________________________  
www.apdsemi.com Version 2.0 - April 2006  
2
SBR10U100CT  
SBR10U100CTF  
SBR10U100CTI  
SBR10U100CTB  
100  
10  
100  
10  
1
Tj=175C  
Tj=125C  
1
Tj=175C  
Tj=75C  
Tj=25C  
Tj=125C  
0.1  
Tj=75C  
0.01  
0.001  
Tj=25C  
0.1  
0.00  
0.10  
0.20  
0.30  
0.40  
0.50  
0.60  
0.70  
0
20  
40  
60  
80  
100  
Vf, Instantaneous Forward Voltage (Volts)  
Vr, Reverse Voltage (Volts)  
Figure 1: Typical Reverse Current  
Figure 2: Typical Forward Voltage  
5
4
3
2
1
0
0
25  
50  
75  
100  
125  
150  
175  
Tc, Case Temp (C)  
Figure 3: Current Derating, Case  
APD SEMICONDUCTOR reserves the right to make changes without further notice to any products herein. APD SEMICONDUCTOR makes no warranty, representation or guarantee regarding the suitability of its  
products for any particular purpose, nor does APD SEMICONDUCTOR assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without  
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APD SEMICONDUCTOR data sheets and/or specifications can and do vary in different applications and actual  
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APD SEMICONDUCTOR does not convey any license  
under its patent rights nor the rights of others. APD SEMICONDUCTOR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other  
applications intended to support or sustain life, or for any other application in which the failure of the APD SEMICONDUCTOR product could create a situation where personal injury or death may occur. Should Buyer  
purchase or use APD SEMICONDUCTOR products for any such unintended or unauthorized application, Buyer shall indemnify and hold APD SEMICONDUCTOR and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or  
unauthorized use, even if such claim alleges that APD SEMICONDUCTOR was negligent regarding the design or manufacture of the part..  
1 Lagoon Drive, Suite 410, Redwood City, CA 94065, USA  
Ph: 650 508 8896 FAX: 650 508 8865  
Homepage: www.apdsemi.com  
email: info@apdsemi.com  
________________________________________________________________________________________________  
www.apdsemi.com Version 2.0 - April 2006  
3

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SBR10U150CTE-G DIODES Rectifier Diode, 1 Phase, 1 Element, 10A, 150V V(RRM), Silicon, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN 获取价格
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