SBM835L [DIODES]
8A LOW VF SCHOTTKY BARRIER RECTIFIER; 8A低VF肖特基整流器
| 型号： | SBM835L |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 8A LOW VF SCHOTTKY BARRIER RECTIFIER |
| 文件： | 总2页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SBM835L
8A LOW VF SCHOTTKY BARRIER RECTIFIER
POWERMITEÒ3
DEVELOPMENT
UNDER
Features
·
Guard Ring Die Construction for
Transient Protection
·
·
Low Forward Voltage Drop
POWERMITEâ3
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material: UL Flammability
Classification Rating 94V-0
E
A
P
Min
4.03
6.40
Max
4.09
6.61
Dim
A
G
·
3
B
C
.889 NOM
1.83 NOM
1.10 1.14
.178 NOM
H
J
D
B
E
Mechanical Data
G
H
1
2
5.01
5.17
4.43
·
·
Case: POWERMITEâ3 Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagram
Marking: Type Number, See also Sheet 2
Weight: 0.072 grams (approx.)
M
J
4.37
D
K
K
.178 NOM
·
·
·
C
C
L
L
.71
.36
.77
.46
M
P
PIN 1
PIN 2
PIN 3, BOTTOMSIDE
HEAT SINK
1.73
1.83
All Dimensions in mm
Note:
Pins 1 & 2 must be electrically
connected at the printed circuit board.
@ TA = 25°C unless otherwise specified
Maximum Ratings
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Value
Characteristic
Symbol
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
35
V
VR(RMS)
IO
RMS Reverse Voltage
25
8
V
A
Average Rectified Output Current
@ TS = 88°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
IFSM
75
A
(JEDEC Method)
@ TC = 88°C
RqJC
RqJS
Tj
Typical Thermal Resistance Junction to Case
0.9
°C/W
°C/W
°C
Typical Thermal Resistance Junction to Soldering Point
Operating Temperature Range
3.2
-65 to +125
-65 to +150
TSTG
Storage Temperature Range
°C
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Min
Typ
Max
Unit
Characteristic
Symbol
Test Condition
V(BR)R
IR = 1mA
Reverse Breakdown Voltage (Note 1)
35
¾
¾
V
V
IF = 8A, TS = 25°C
IF = 8A, TS = 125°C
¾
¾
0.47
0.38
0.51
0.41
VFM
IRM
Forward Voltage (Note 1)
TS = 25°C, VR = 35V
TS = 100°C, VR = 35V
¾
¾
0.07
7.5
1.4
35
mA
Peak Reverse Current (Note 1)
Notes:
1. Short duration test pulse used to minimize self-heating effect.
DS30225 Rev. 1 - 1
1 of 2
SBM835L
100
10
1
100
10
TJ = 125ºC
TJ = 100ºC
Tj = 125ºC
Tj = 25ºC
1.0
0.1
TJ = 75ºC
Tj = 75ºC
0.1
0.01
TJ = 25ºC
0.01
0.001
0.0001
0.001
0
100 200 300
600 700
400 500
10
30
0
15
20
25
35
5
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Typical Forward Characteristics
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 2 Typical Reverse Characteristics
100
80
10,000
1000
100
Single Half-Sine-Wave
(JEDEC Method)
f = 1MHz
TC = 88°C
60
40
20
0
5
15
VR, REVERSE VOLTAGE (V)
0
25
10
30
20
35
1
10
100
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
Fig. 4 Typical Junction Capacitance vs. Reverse Voltage
(Note 2)
Ordering Information
Device
Packaging
Shipping
SBM835L-13
POWERMITEâ3
5000/Tape & Reel
Notes:
2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
SBM835L = Product type marking code
= Manufacturers’ code marking
YYWW = Date code marking
YY = Last digit of year ex: 2 for 2002
WW = Week code 01 to 52
SBM835L
YYWW
DEVELOPMENT
UNDER
POWERMITE is a registered trademark of Microsemi Corporation.
DS30225 Rev. 1 - 1
2 of 2
SBM835L
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