SBL6030PT-7-F [DIODES]
Rectifier Diode,;
| 型号： | SBL6030PT-7-F |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Rectifier Diode, |
| 文件： | 总2页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SBL6030PT - SBL6060PT
60A SCHOTTKY BARRIER RECTIFIER
Features
·
·
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
TO-3P
Dim
A
B
C
D
E
Min
3.20
Max
3.50
·
·
·
A
B
4.59
5.16
H
20.80
19.70
2.10
21.30
20.20
2.40
·
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
J
S
R
C
D
G
H
J
0.51
0.76
K
15.90
1.70
16.40
2.70
Mechanical Data
L
P
N
K
L
3.10Æ
3.50
3.30Æ
4.51
Q
·
·
Case: Molded Plastic
Plastic Material: UL Flammability
Classification Rating 94V-0
G
M
N
P
5.20
5.70
·
·
Moisture sensitivity: Level 1 per J-STD-020A
1.12
1.22
Terminals: Matte Tin Finish,
Solderable per MIL-STD-202, Method 208
(Note 3)
Polarity: As Marked on Body
Marking: Type Number
1.93
2.18
E
Q
R
S
2.97
3.22
M
M
·
·
·
11.70
12.80
4.30 Typical
Weight: 5.6 grams (approx.)
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SBL
6030PT
SBL
6040PT
SBL
6050PT
SBL
6060PT
Characteristic
Symbol
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
30
21
40
28
50
35
60
42
V
VR(RMS)
RMS Reverse Voltage
V
A
Average Rectified Output Current
@ TC = 100°C
IO
60
(Note 1)
Non-Repetitive Peak Forward Surge Current
8.3ms single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
500
A
VFM
IRM
Forward Voltage Drop
@ IF = 30A, TC = 25°C
0.55
0.70
V
Peak Reverse Current
at Rated DC Blocking Voltage
@ TC 25°C
=
20
200
mA
@ TC = 100°C
CT
Typical Total Capacitance (Note 2)
1500
0.5
pF
°C/W
°C
RqJc
Typical Thermal Resistance Junction to Case (Note 1)
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. For lead free terminal plating part number, please add "-F" suffix to part number above. Example: SBL6030PT-7-F.
DS30050 Rev. 3 - 2
1 of 2
SBL6030PT - SBL6060PT
www.diodes.com
ã Diodes Incorporated
80
70
100
SBL6030PT - SBL6040PT
60
SBL6050PT - SBL6060PT
10
50
40
30
20
10
1.0
0.1
0
0
0.2
0.4
0.6
0.8
1.0
0
50
100
150
TC, CASE TEMPERATURE (°C)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
Fig. 1 Forward Current Derating Curve
10000
600
500
400
300
8.3ms single half-sine-wave
JEDEC method
Tj = 25°C
1000
200
100
0
100
0.1
1.0
10
100
1
10
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Forward Surge Current
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Total Capacitance per Element
100
SBL6030/40PT
SBL6050/60PT
10
Tj = 100°C
1.0
SBL6030/40PT
SBL6050/60PT
0.1
Tj = 25°C
0.01
0
10
20
30
40
50
60
PEAK REVERSE VOLTAGE (V)
Fig. 5 Typical Reverse Characteristics
DS30050 Rev. 3 - 2
2 of 2
SBL6030PT - SBL6060PT
www.diodes.com
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