SBL1060CT [DIODES]
10A SCHOTTKY BARRIER RECTIFIER; 10A肖特基整流器
| 型号： | SBL1060CT |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 10A SCHOTTKY BARRIER RECTIFIER |
| 文件： | 总2页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SBL1030CT - SBL1060CT
10A SCHOTTKY BARRIER RECTIFIER
Features
·
Schottky Barrier Chip
·
Guard Ring Die Construction for
Transient Protection
TO-220AB
·
·
·
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material: UL Flammability
Classification Rating 94V-0
L
Dim
A
B
C
D
E
Min
14.22
9.65
2.54
5.84
¾
Max
15.88
10.67
3.43
B
M
C
D
E
·
·
K
A
6.86
6.35
1
2
3
G
H
J
12.70
2.29
0.51
14.73
2.79
G
1.14
Mechanical Data
J
N
K
L
3.53Æ 4.09Æ
·
·
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Body
Marking: Type Number
Weight: 2.24 grams (approx.)
Mounting Position: Any
3.56
1.14
0.30
2.03
4.83
1.40
0.64
2.92
H
H
P
M
N
P
Pin 1
Pin 2
Pin 3
·
·
·
·
Case
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SBL
SBL
SBL
SBL
SBL
SBL
Characteristic
Symbol
Unit
1030CT 1035CT 1040CT 1045CT 1050CT 1060CT
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
30
21
35
40
28
45
50
35
60
42
V
VR(RMS)
IO
RMS Reverse Voltage
24.5
31.5
V
A
Average Rectified Output Current
@ TC = 95°C
10
(Note 1)
Non-Repetitive Peak Forward Surge Current
8.3ms single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
175
A
VFM
IRM
Forward Voltage Drop
@ IF = 5.0A, TC = 25°C
0.55
0.70
V
Peak Reverse Current
at Rated DC Blocking Voltage
@ TC = 25°C
@ TC = 125°C
0.5
50
mA
Cj
Typical Junction Capacitance
(Note 2)
450
5.5
pF
°C/W
°C
RqJc
Typical Thermal Resistance Junction to Case
Operating and Storage Temperature Range
(Note 1)
Tj, TSTG
-65 to +150
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
DS23048 Rev. C-2
1 of 2
SBL1030CT - SBL1060CT
100
20
16
12
SBL1030CT - SBL10450CT
10
SBL1050CT - SBL1060CT
8
1.0
0.1
4
0
Tj = 25°C
Pulse width = 300µs
2% duty cycle
0.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics per Element
0.4
0.6
0.8
0
50
100
150
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
4000
300
250
200
150
Tj = 25°C
8.3ms single half-sine-wave
JEDEC method
1000
100
50
0
100
0.1
1.0
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance per Element
10
100
1
100
10
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
10
TC = 125°C
1.0
0.1
TC = 75°C
TC = 25°C
0.01
0.001
0
40
80
120
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
DS23048 Rev. C-2
2 of 2
SBL1030CT - SBL1060CT
相关型号：
SBL1060CTP
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 60V V(RRM), Silicon, TO-220AB, TO-220AB, 3 PIN
MCC
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