SBL1050-A [DIODES]
Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 50V V(RRM), Silicon;型号: | SBL1050-A |
厂家: | DIODES INCORPORATED |
描述: | Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 50V V(RRM), Silicon 二极管 局域网 |
文件: | 总2页 (文件大小:69K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SBL1030 - SBL1060
10A SCHOTTKY BARRIER RECTIFIER
Features
·
·
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
TO-220AC
·
·
·
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material: UL Flammability
Classification Rating 94V-0
L
Dim
A
B
C
D
E
Min
14.22
9.65
2.54
5.84
¾
Max
15.88
10.67
3.43
B
M
C
D
E
·
·
K
A
6.86
6.35
Pin 1
Pin 2
G
J
12.70
0.51
14.73
1.14
G
K
L
3.53Æ 4.09Æ
Mechanical Data
J
N
3.56
1.14
0.30
2.03
4.83
4.83
1.40
0.64
2.92
5.33
·
·
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
M
N
P
R
P
Pin 1
Pin 2
·
·
·
·
Polarity: See Diagram
Case
R
Weight: 2.24 grams (approx.)
Mounting Position: Any
Marking: Type Number
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SBL
1030
SBL
1035
SBL
1040
SBL
1045
SBL
1050
SBL
1060
Characteristic
Symbol
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
30
21
35
40
28
45
50
35
60
42
V
VR(RMS)
IO
RMS Reverse Voltage
24.5
31.5
V
A
Average Rectified Output Current
@ TC = 95°C
10
(Note 1)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
250
A
VFM
IRM
Forward Voltage Drop
@ IF = 10A, TC = 25°C
0.60
0.75
V
Peak Reverse Current
at Rated DC Blocking Voltage
@ TC 25°C
=
1.0
50
mA
@ TC = 100°C
Cj
Typical Junction Capacitance
(Note 2)
700
3.5
pF
°C/W
°C
RqJc
Thermal Resistance Junction to Case
Operating and Storage Temperature Range
(Note 1)
Tj, TSTG
-65 to +150
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
DS23042 Rev. C-2
1 of 2
SBL1030 - SBL1060
20
16
12
100
SBL1030CT - SBL10450CT
10
8
SBL1050CT - SBL1060CT
1.0
4
0
Tj = 25°C
Pulse width = 300µs
2% duty cycle
0.1
0
50
100
150
0.2
0.4
0.6
0.8
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
4000
300
250
200
150
Tj = 25°C
8.3 ms single half-sine-wave
JEDEC method
1000
100
50
0
100
0.1
1.0
10
100
1
10
100
VR, REVERSE VOLTAGE (V)
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
Fig. 4 Typical Junction Capacitance per Element
100
Tj = 100°C
10
Tj = 75°C
1.0
0.1
Tj = 25°C
0.01
0
40
80
120
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
DS23042 Rev. C-2
2 of 2
SBL1030 - SBL1060
相关型号:
SBL1050-BP
Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 50V V(RRM), Silicon, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2
MCC
SBL1050CT
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 50V V(RRM), Silicon, TO-220AB, TO-220AB, 3 PIN
MCC
SBL1050CT-BP
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 50V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC
SBL1050CTP
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 50V V(RRM), Silicon, TO-220AB, TO-220AB, 3 PIN
MCC
©2020 ICPDF网 联系我们和版权申明