S3GB-7 [DIODES]
Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, PLASTIC, SMB, 2 PIN;
| 型号： | S3GB-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, PLASTIC, SMB, 2 PIN 光电二极管 |
| 文件： | 总2页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S3A/B - S3M/B
3.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
Features
·
·
Glass Passivated Die Construction
Low Forward Voltage Drop and High Current
Capability
SMB
Min
SMC
Min
B
·
·
·
Surge Overload Rating to 100A Peak
Ideally Suited for Automatic Assembly
Plastic Material - UL Flammability
Classification 94V-0
Dim
A
Max
3.94
4.57
2.21
0.31
5.59
0.20
1.52
2.62
Max
6.22
7.11
3.18
0.31
8.13
0.20
1.52
2.62
3.30
4.06
1.96
0.15
5.00
0.10
0.76
2.00
5.59
6.60
2.75
0.15
7.75
0.10
0.76
2.00
A
J
C
D
B
C
D
Mechanical Data
E
·
·
Case: Molded Plastic
Terminals: Solder Plated Terminal - Solderable
per MIL-STD-202, Method 208
G
H
G
J
H
·
·
Polarity: Cathode Band or Cathode Notch
E
All Dimensions in mm
Weight: SMB 0.093 grams (approx)
SMC 0.21 grams (approx)
AB, BB, DB, GB, JB, KB, MB Suffix Designates SMB Package
A, B, D, G, J, K, M Designates SMC Package
·
Marking: Type Number
@ TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
S3
A/AB
S3
B/BB
S3
D/DB
S3
G/GB
S3
J/JB
S3
K/KB
S3
M/MB
Characteristic
Symbo
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
50
100
70
200
140
400
600
420
800
560
1000
700
V
VR(RMS)
RMS Reverse Voltage
30
280
3.0
V
A
Average Rectified Output Current
@TT = 75°C
IO
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
100
A
Forward Voltage
@ IF = 3.0A
VFM
IRM
1.15
V
µA
10
250
Peak Reverse Current
at Rated DC Blocking Voltage
@TA 25°C
=
@ TA = 125 °C
Cj
Typical Junction Capacitance (Note 2)
40
10
pF
Typical Thermal Resistance Junction to Terminal
(Note 1)
RqJT
Tj, TSTG
°C/W
°C
Operating and Storage Temperature Range
-65 to +150
Notes:
1. Thermal resistance: junction to terminal, unit mounted on PC board with 5.0 mm2 (0.013 mm thick) copper pad as heat sink.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
DS16005 Rev. G-2
1 of 2
S3A/B-S3M/B
3.0
2.5
Resistive or
Inductive Load
10
2.0
1.0
0.1
1.5
1.0
0.5
0
IF PULSE WIDTH = 300 mS
0.01
25
50
75
100
125
150
0
0.4
0.8
1.0
1.4
1.8
TT, TERMINAL TEMPERATURE (ºC)
Fig. 1 Forward Current Derating Curve
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
120
100
1000
100
Single Half-Sine-Wave
JEDEC Method
Tj = 125°C
80
60
10
1.0
0.1
40
20
Tj = 25°C
0.01
0
0
20
40
60
80
100
120 140
10
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Forward Surge Current Derating Curve
100
1
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
DS16005 Rev. G-2
2 of 2
S3A/B-S3M/B
相关型号：
S3GB-T3-LF
Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-214AA, SMB, 2 PIN
SURGE
S3GHE3/9AT
Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN
VISHAY
S3GHE3_A/H
Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-214AB, SMC, 2 PIN
VISHAY
S3GHE3_A/I
Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-214AB, SMC, 2 PIN
VISHAY
©2020 ICPDF网 联系我们和版权申明