PAM8945 [DIODES]
4.0W CLASS-G AUDIO AMPLIFIER WITH INTEGRATED BOOST CONVERTER;
| 型号： | PAM8945 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 4.0W CLASS-G AUDIO AMPLIFIER WITH INTEGRATED BOOST CONVERTER 放大器 |
| 文件： | 总9页 (文件大小：568K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PAM8945
4.0W CLASS-G AUDIO AMPLIFIER WITH INTEGRATED
BOOST CONVERTER AND BATTERY TRACKING AGC
Description
Pin Assignments
(Top View)
The PAM8945 is a high-efficiency Class-G audio power
amplifier with an integrated boost converter. It drives up to
4.0W (10% THD+N) into a 4Ω speaker. With 85% typical
efficiency, the PAM8945 helps extend battery life when
playing audio.
BGND SW
12
11
PVDD
OUT+
OUT-
1
2
3
4
10 VBAT
The built-in boost converter generates the voltage rail for the
output stage. This provides a louder audio output than a
stand-alone amplifier connected directly to the battery. It also
9
8
7
AGC
EN
maintains
voltage.
a consistent loudness, regardless of battery
The PAM8945 features battery tracking AGC function which
adjusts the amplifier gain to limit battery current at lower
battery voltage.
PGND
IN+
5
5
5
6
5
6
AGND IN-
The PAM8945 features DC input protection and all outputs
are fully protected against output-to-output shorts. The
PAM8945 is available in tiny W-QFN2030-12 package.
W-QFN2030-12
Applications
Features
Cell Phones
PDA
Built-in Battery Tracking Automatic Gain Control (AGC)
High-Efficiency Integrated Boost Converter Over 85%
4.0W into a 4Ω Load at 10% THD
3.2W into a 4Ω Load at 1% THD
GPS
Portable Electronics
Speakers
Operates from 2.8V to 5.2V
Efficient Class-G Prolongs Battery Life
Minimized ON/OFF Pop Noise
Superior Low Noise
High PSRR
DC Input Protection
Auto-Recovery Short-Circuit Protection
Thermal Shutdown
Available in 2.0mm x 3.0mm 12L W-QFN Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and
Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total
Br + Cl) and <1000ppm antimony compounds.
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June 2016
© Diodes Incorporated
PAM8945
Document number: DS38267 Rev. 2 - 2
PAM8945
Typical Applications Circuit
2.2μH
2.8V to 5.2V
+
10μF
100μF
1μF 10μF
VBAT
EN
SW PVDD
PGND
ON
OFF
OUT+
OUT-
IN+
IN-
Audio Input
AGC
AGC AGND
BGND
Pin Descriptions
Pin Number
Pin Name
Description
1
2
PVDD
OUT+
OUT-
PGND
AGND
IN-
Boost Converter Output and Amplifier Power Supply
Amplifier Positive Audio Output
Amplifier Negative Audio Output
Power Ground
3
4
5
Analog Ground
6
Negative Audio Input
7
IN+
Positive Audio Input
8
EN
Shutdown Terminal for the Chip
AGC Setting Gain
9
AGC
VBAT
SW
10
11
12
Supply Voltage
Boost Convertor Switching
Power Ground
BGND
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© Diodes Incorporated
PAM8945
Document number: DS38267 Rev. 2 - 2
PAM8945
Functional Block Diagram
VBAT
SW
EN
Bias
PVDD
Boost Convertor
IN+
Gate
+
-
OUT+
OUT-
Drive
PWM
Modulator
AGC
Gate
Drive
IN-
SCP
OTP
DCP
UVLO
AGC
Startup
Protection
VREF
OSC
AGND
BGND
PGND
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Symbol
Parameter
Value
Unit
V
Supply Voltage
-0.3 to 6.0
VBAT
VI
Input Voltage, EN, IN+, IN-, AGC
Operating Free-air Temperature Range
Operating Junction Temperature Range
Storage Temperature Range
V
-0.3 to VBAT + 0.3
-40 to +85
TA
°C
°C
°C
TJ
-40 to +150
-65 to +150
TSTG
Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.)
Symbol
Parameter
Min
2.8
Max
5.2
Unit
V
Supply Voltage
VBAT
VIH
High-Level Input Voltage
Low-Level Input Voltage
EN
EN
1.3
GND
-40
VBAT
0.6
V
VIL
V
TA
Operating Free-Air Temperature
+85
°C
Thermal Information
Symbol
Parameter
Package
Max
Unit
Thermal Resistance (Junction to Ambient)
Thermal Resistance (Junction to Case)
W-QFN2030-12
W-QFN2030-12
62
11
θJA
θJc
°C/W
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© Diodes Incorporated
PAM8945
Document number: DS38267 Rev. 2 - 2
PAM8945
Electrical Characteristics (@VBAT=3.6V, AGC=GND, TA = +25°C, RL=4Ω+33µH, unless otherwise specified.)
Symbol
Parameter
Supply Voltage
Test Conditions
Min
2.8
—
Typ
—
Max
Unit
V
—
5.2
—
—
—
—
—
—
—
—
—
VBAT
THD+N=10%, f=1kHz
THD+N=1%, f=1kHz
PO=1.0W, RL=8Ω
PO=2W, RL=4Ω
4.0
3.2
0.07
0.15
70
W
Output Power
PO
VBAT=3.6V
f=1kHz
—
W
Total Harmonic
Distortion Plus
Noise
—
THD+N
%
—
f=217Hz
f=1kHz
—
Power Supply Ripple
Rejection
VBAT=3.6V, Input AC -
ground with C=1μF
PSRR
—
70
dB
f=10kHz
THD+N=1%
f=1kHz
—
67
SNR
VOP
Signal-To-Noise Ratio
Peak Output Voltage
A-weighting
VBAT=3.6V
—
95
dB
V
—
5.75
Boost Convertor Auto-Pass
Through Threshold
—
—
—
2
—
V(PEAK)
VO_TH
VN
No A-weighting
A-weighting
—
—
100
60
—
—
Output Noise
Input AC-ground
μV
η
Efficiency
f=1kHz
—
—
86
4
—
—
%
RL=8Ω, PO=1W
Quiescent Current
No Load
mA
IQ
VBAT=3.6V
Shutdown Current
EN=0V
—
—
1
μA
mΩ
mΩ
ISD
VBAT=2.8V to 5.2V
High Side PMOS,
I=500mA
Low Side NMOS,
I=500mA
—
—
—
—
260
160
—
—
—
—
VBAT=5V
VBAT=5V
Boost
Static Drain-to-Source On-
State Resistor
RDS(ON)
1,200
300
Switching Frequency
kHz
fSW
VBAT=2.8V to 5.2V
Class D
Closed-Loop Gain
—
—
—
—
—
—
—
—
—
—
—
20
24
—
4
—
—
20
—
—
dB
KΩ
mV
A
GV
RIN
Input Impedance
Av=20dB
Input AC-ground
VBAT=3.6V
—
Output Offset Voltage
Convertor SW Peak Current
Start-Up Time From EN
VOS
IPEAK
tON
6
ms
En Input High Voltage
En Input Low Voltage
—
—
1.3
—
—
—
VIH
VIL
VBAT=5V
VBAT=5V
V
—
0.6
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June 2016
© Diodes Incorporated
PAM8945
Document number: DS38267 Rev. 2 - 2
PAM8945
Performance Characteristics (@VBAT=3.6V, AGC=GND, TA = +25°C, RL=8Ω+33μH, unless otherwise specified.)
THD+N vs. Output Power (RL= 8Ω) THD+N vs. Output Power (RL = 4Ω)
20
10
5
20
10
5
f=100Hz/1kHz/10kHz
(Red/Pink/Blue)
f=100Hz/1kHz/10kHz
(Red/Pink/Blue)
2
1
2
1
0.5
0.5
%
%
0.2
0.1
0.2
0.1
0.05
0.05
0.02
0.01
0.02
0.01
1m
2m
5m
10m
20m
50m
100m 200m
500m
1
2
4
1m
2m
5m
10m
20m
50m 100m 200m
W
500m
1
2
5
8
W
THD+N vs. Frequency (RL = 8Ω)
THD+N vs. Frequency (RL = 4Ω)
10
5
10
5
Po=0.3W/0.5W/1W
(Red/Pink/Blue)
Po=0.3W/0.5W/1W
(Red/Pink/Blue)
2
1
2
1
%
0.5
%
0.5
0.2
0.1
0.2
0.1
0.05
0.03
0.05
0.03
20
50
100
200
500
Hz
1k
2k
5k
10k
20k
20
50
100
200
500
Hz
1k
2k
5k
10k
20k
PSRR vs. Frequency (RL = 8Ω)
PSRR vs. Frequency (RL = 4Ω)
+0
TT TT TT TTT T T
+0
TT TT TT TTT TT T
-10
-10
AGC=GND
AGC=GND
-20
-30
-40
-50
-60
-70
-80
-90
-100
-20
-30
-40
-50
-60
-70
-80
-90
-100
d
B
d
B
-110
20
-110
20
50
100
200
500
Hz
1k
2k
5k
10k 20k
50
100
200
500
Hz
1k
2k
5k
10k 20k
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© Diodes Incorporated
PAM8945
Document number: DS38267 Rev. 2 - 2
PAM8945
Performance Characteristics (@VBAT=3.6V, AGC=GND, TA = +25°C, RL=8Ω+33μH, unless otherwise specified.)
Noise Floor (RL =8Ω) Gain vs. Supply Voltage
+0
-10
-20
-30
-40
-50
d
B
r
-60
A
-70
-80
-90
AGC=Float/GND/VBAT
(Red /Blue/Green)
-100
-110
-120
20
50
100
200
500
Hz
1k
2k
5k
10k
20k
Efficiency vs. Output Power (RL ꢀ8Ω)
Quiescent Current vs. Supply Voltage
Start Up
Shutdown
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© Diodes Incorporated
PAM8945
Document number: DS38267 Rev. 2 - 2
PAM8945
Ordering Information (Note 4)
PAM8945 X X X
Package
Packing
Pin Configuration
P: 12 Pin
J: W-QFN2030-12
R: Tape & Reel
7” Tape and Reel
Part Number
Package
W-QFN2030-12
Quantity
Part Number Suffix
PAM8945PJR
3,000/Tape & Reel
-7
Note:
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
W-QFN2030-12
(Top View)
P8945: Product Code
X: Internal Code
Y: Year 0~9
W: Week: A~Z: 1~26 weeks;
a~z: 27~52 weeks; z
represents 52 and 53 weeks.
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© Diodes Incorporated
PAM8945
Document number: DS38267 Rev. 2 - 2
PAM8945
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
W-QFN2030-12
D
PIN 1# DOT
BY MARKING
b
PIN #1 ID
C0.125
W-QFN2030-12
Dim Min Max Typ
E
A
A1
A3
b
0.700 0.800 0.750
e
--
0.050 --
0.203 REF
0.200 0.300 0.250
1.950 2.050 2.000
2.950 3.050 3.000
0.500 BSC
D
E
e
L
0.350 0.450 0.400
La( x5)
L( x7)
La 0.450 0.550 0.50
All Dimensions in mm
A3
A
A1
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
W-QFN2030-12
X3
X2( 5x)
Y1( 2x)
Dimensions Value (in mm)
C
X
X1
X2
X3
Y
Y1
Y2
Y3
0.500
0.350
0.700
0.600
2.300
0.600
0.700
0.350
3.300
Y2( 8x)
Y3
C
Y( 2x)
X1( 3x)
X( 4x)
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© Diodes Incorporated
PAM8945
Document number: DS38267 Rev. 2 - 2
PAM8945
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
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© Diodes Incorporated
PAM8945
Document number: DS38267 Rev. 2 - 2
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