MMSTA56 [DIODES]
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR; PNP小信号表面贴装晶体管
| 型号： | MMSTA56 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 文件： | 总2页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMSTA55/MMSTA56
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
·
Epitaxial Planar Die Construction
Complementary NPN Type Available
(MMSTA05/MMSTA06)
Ideal for Medium Power Amplification and
Switching
Ultra-Small Surface Mount Package
SOT-323
A
·
Dim
A
Min
0.25
1.15
2.00
Max
0.40
1.35
2.20
C
·
·
C
B
B
C
B
E
D
0.65 Nominal
G
H
Mechanical Data
E
0.30
1.20
1.80
0.0
0.40
1.40
2.20
0.10
1.00
0.40
0.18
8°
G
H
·
·
·
·
Case: SOT-323, Molded Plastic
Case Material - UL Flammability Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
K
J
M
J
L
D
E
K
0.90
0.25
0.10
0°
L
·
·
·
·
·
Terminal Connections: See Diagram
MMSTA55 Marking K2H, K2G (See Page 2)
MMSTA56 Marking K2G (See Page 2)
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approx.)
M
C
a
All Dimensions in mm
E
B
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
MMSTA55
-60
MMSTA56
Unit
V
Collector-Base Voltage
-80
-80
Collector-Emitter Voltage
-60
V
Emitter-Base Voltage
-4.0
-500
200
625
V
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
mA
mW
K/W
°C
Pd
RqJA
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Tj, TSTG
-55 to +150
Note:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30167 Rev. 3 - 2
1 of 2
MMSTA55/MMSTA56
www.diodes.com
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Symbol
Min
Max
Unit
Test Condition
MMSTA55
MMSTA56
-60
-80
V(BR)CBO
IC = -100mA, IE = 0
¾
V
Collector-Emitter Breakdown Voltage
MMSTA55
MMSTA56
-60
-80
I
C = -1.0mA, IB = 0
V(BR)CEO
V(BR)EBO
ICBO
¾
¾
V
V
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IE = -100mA, IC = 0
-4.0
MMSTA55
MMSTA56
VCB = -60V, IE = 0
VCB = -80V, IE = 0
¾
-100
nA
Collector Cutoff Current
MMSTA55
MMSTA56
VCE = -60V, IBO = 0V
VCE = -80V, IBO = 0V
ICEX
¾
-100
nA
ON CHARACTERISTICS (Note 2)
I
C = -10mA, VCE = -1.0V
hFE
VCE(SAT)
VBE(SAT)
DC Current Gain
100
¾
¾
IC = -100mA, VCE = -1.0V
IC = -100mA, IB = -10mA
IC = -100mA, VCE = -1.0V
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
¾
¾
-0.25
-1.2
V
V
VCE = -1.0V, IC = -100mA,
f = 100MHz
fT
Current Gain-Bandwidth Product
50
¾
MHz
(Note 3)
Ordering Information
Device
Packaging
SOT-323
Shipping
MMSTA55-7
MMSTA56-7
3000/Tape & Reel
Notes:
2. Short duration test pulse used to minimize self-heating effect.
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K2x = Product Type Marking Code, e.g. K2H = MMSTA55
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K2x
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
J
K
L
M
N
P
R
S
T
U
V
W
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30167 Rev. 3 - 2
2 of 2
www.diodes.com
MMSTA55/MMSTA56
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