MMST6427_2 [DIODES]
NPN SURFACE MOUNT DARLINGTON TRANSISTOR; NPN表面贴装达林顿晶体管
| 型号： | MMST6427_2 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | NPN SURFACE MOUNT DARLINGTON TRANSISTOR |
| 文件： | 总3页 (文件大小：114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMST6427
NPN SURFACE MOUNT DARLINGTON TRANSISTOR
Features
•
•
•
•
•
•
Epitaxial Planar Die Construction
Ideal for Low Power Amplification and Switching
High Current Gain
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 2)
"Green" Device (Note 3 and 4)
SOT-323
Min
A
C
Dim
A
B
C
D
E
Max
0.40
1.35
2.20
0.25
1.15
C
B
2.00
B
E
0.65 Nominal
G
H
Mechanical Data
0.30
1.20
1.80
0.0
0.40
1.40
2.20
0.10
1.00
0.40
0.18
8°
G
H
J
•
•
Case: SOT-323
Case Material: Molded Plastic, "Green" Molding
Compound, Note 4. UL Flammability Classification Rating
94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
K
J
M
K
L
0.90
0.25
0.10
0°
•
•
•
•
L
D
E
M
α
C
All Dimensions in mm
•
•
•
Marking Information: K1D - See Page 3
Ordering & Date Code Information: See Page 3
Weight: 0.006 grams (approximate)
E
B
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Symbol
VCBO
VCEO
VEBO
IC
Value
40
40
12
500
Unit
V
V
V
mA
mW
°C/W
°C
200
Pd
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
625
Rθ
JA
-55 to +150
Tj, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Symbol
Min
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
40
40
12
⎯
⎯
⎯
V
V
V
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
⎯
⎯
⎯
50
1.0
50
IC = 100μA, IE = 0
IC = 100mA, IB = 0
IE = 10μA, IC = 0
VCB = 30V, IE = 0
nA
μA VCE = 25V, IB = 0
nA
VEB = 10V, IC = 0
ON CHARACTERISTICS (Note 5)
IC = 10mA, VCE = 5.0V
IC = 100mA, VCE = 5.0V
IC = 500mA, VCE = 5.0V
IC = 50mA, IB = 0.5mA
IC = 500mA, IB = 0.5mA
IC = 500mA, IB = 0.5mA
IC = 50mA, VCE =5.0V
10,000
20,000
14,000
100,000
200,000
140,000
DC Current Gain
hFE
⎯
1.2
1.5
Collector-Emitter Saturation Voltage
V
VCE(SAT)
⎯
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
2.0
1.75
V
V
VBE(SAT)
VBE(ON)
⎯
⎯
8.0 Typical
15 Typical
pF
pF
Cobo
Cibo
VCB = 10V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
Input Capacitance
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Code
0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
5. Short duration pulse test used to minimize self-heating effect.
MMST6427
© Diodes Incorporated
DS30166 Rev. 10 - 2
1 of 3
www.diodes.com
300
250
1.10
1.05
I
I
C
B
= 1000
1.00
0.95
0.90
0.85
0.80
Note 1
T
= -50°C
A
200
150
100
T
= 25°C
A
0.75
0.70
0.65
0.60
T
= 150°C
A
0.55
0.50
50
0
0.45
0.40
1,000
25
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs. Ambient Temperature
10
IC, COLLECTOR CURRENT (mA)
75 100 125 150
200
1
0
175
100
50
Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current
1,000,000
1.6
V
= 5V
1.5
1.4
1.3
CE
T
= -50°C
= 25°C
A
100,000
1.2
1.1
T
A
1.0
0.9
0.8
10,000
1,000
T
= 150°C
A
0.7
0.6
0.5
0.4
0.3
0.2
100
10
IC, COLLECTOR CURRENT (mA)
Fig. 4, Base Emitter Voltage vs. Collector Current
100
1
0.1
10
IC, COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain vs. Collector Current
1,000
1
100
1,000
100
10
1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 5, Gain Bandwidth Product vs. Collector Current
MMST6427
© Diodes Incorporated
DS30166 Rev. 10 - 2
2 of 3
www.diodes.com
Ordering Information (Note 4 & 6)
Packaging
Shipping
Device
SOT-323
3000/Tape & Reel
MMST6427-7-F
Notes:
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K1D= Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
K1D
M = Month ex: 9 = September
Date Code Key
2005
2006
2007
2008
2009
2010
2011
2012
Year
2000
2001
2002
2003
2004
S
T
U
V
W
X
Y
Z
Code
L
M
N
P
R
Aug
Sep
Oct
Nov
Dec
Month
Code
Jan
Feb
Mar
Apr
May
Jun
Jul
8
9
O
N
D
1
2
3
4
5
6
7
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
MMST6427
© Diodes Incorporated
DS30166 Rev. 10 - 2
3 of 3
www.diodes.com
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