MMBTA92Q-7-F [DIODES]

300V PNP SMALL SIGNAL TRANSISTOR IN SOT23;
MMBTA92Q-7-F
型号: MMBTA92Q-7-F
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

300V PNP SMALL SIGNAL TRANSISTOR IN SOT23

文件: 总5页 (文件大小:355K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MMBTA92  
300V PNP SMALL SIGNAL TRANSISTOR IN SOT23  
Features  
Mechanical Data  
BVCEO > 300V  
Case: SOT-23  
Ideal for Medium Power Amplification and Switching  
Complementary NPN Type: MMBTA42  
Case Material: Molded Plastic, “Green” Molding Compound;  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Finish-Matte Tin Plated Leads; Solderable per MIL-  
STD-202, Method 208  
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
PPAP Capable (Note 4)  
Weight: 0.008 grams (Approximate)  
SOT23  
C
E
B
C
B
E
Top View  
Pin-Out  
Top View  
Device Symbol  
Ordering Information (Notes 4 & 5)  
Part Number  
MMBTA92-7-F  
MMBTA92-13-F  
MMBTA92Q-7-F  
Compliance  
AEC-Q101  
AEC-Q101  
Automotive  
Marking  
K3R  
K3R  
Reel size (inches)  
Tape width (mm)  
Quantity per reel  
3,000  
7
13  
7
8
8
8
10,000  
3,000  
K3R  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"  
and Lead-free.  
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally  
the same, except where specified.  
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.  
Marking Information  
SOT23  
K3R = Product Type Marking Code  
YM = Date Code Marking  
Y = Year (ex: C = 2015)  
M = Month (ex: 9 = September)  
K3R  
Date Code Key  
Year  
2015  
2016  
2017  
2018  
2019  
2020  
2021  
2022  
2023  
2024  
2025  
2026  
Code  
C
D
E
F
G
H
I
J
K
L
M
N
Month  
Code  
Jan  
1
Feb  
2
Mar  
3
Apr  
4
May  
5
Jun  
6
Jul  
7
Aug  
8
Sep  
9
Oct  
O
Nov  
N
Dec  
D
1 of 5  
www.diodes.com  
May 2015  
© Diodes Incorporated  
MMBTA92  
Document number: DS30060 Rev. 12 - 2  
MMBTA92  
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
-300  
-300  
-5.0  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
-500  
mA  
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
PD  
Value  
300  
Unit  
mW  
°C/W  
°C  
Power Dissipation  
(Note 5)  
(Note 5)  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
417  
R  
JA  
-55 to +150  
TJ, TSTG  
ESD Ratings (Note 6)  
Characteristic  
Electrostatic Discharge - Human Body Model  
Electrostatic Discharge - Machine Model  
Symbol  
Value  
4,000  
400  
Unit  
V
JEDEC Class  
ESD HBM  
ESD MM  
3A  
C
V
Notes:  
5. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air  
conditions whilst operating in a steady-state.  
6. Refer to JEDEC specification JESD22-A114 and JESD22-A115.  
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
OFF CHARACTERISTICS (Note 7)  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
Symbol  
Min  
Max  
Unit  
Test Condition  
IC = -100µA, IE = 0  
IC = -1.0mA, IB = 0  
IE = -100µA, IC = 0  
VCB = -200V, IE = 0  
VEB = -3.0V, IC = 0  
-300  
-300  
-5.0  
V
V
V
nA  
nA  
-250  
-100  
BVCBO  
BVCEO  
BVEBO  
ICBO  
Emitter Cut-Off Current  
IEBO  
ON CHARACTERISTICS (Note 7)  
IC = -1.0mA, VCE = -10V  
IC = -10mA, VCE = -10V  
IC = -30mA, VCE = -10V  
IC = -20mA, IB = -2.0mA  
IC = -20mA, IB = -2.0mA  
-0.5  
-0.9  
25  
40  
25  
DC Current Gain  
hFE  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
V
V
VCE(SAT)  
VBE(SAT)  
6.0  
pF  
Cobo  
fT  
VCB = -20V, f = 1.0MHz, IE = 0  
VCE = -20V, IC = -10mA,  
f = 100MHz  
Current Gain-Bandwidth Product  
50  
MHz  
Note:  
7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.  
2 of 5  
www.diodes.com  
May 2015  
© Diodes Incorporated  
MMBTA92  
Document number: DS30060 Rev. 12 - 2  
MMBTA92  
1.0  
0.9  
IC  
IB  
350  
300  
250  
= 10  
0.8  
0.7  
0.6  
0.5  
200  
150  
0.4  
0.3  
TA = 150°C  
100  
0.2  
TA = 25°C  
0.1  
0
50  
0
TA = -50°C  
100  
1000  
10  
1
0
175 200  
25  
50  
75 100 125 150  
TA, AMBIENT TEMPERATURE (°C)  
Fig. 1Power Dissipation  
IC, COLLECTOR CURRENT (mA)  
Fig. 2, Collector Emitter Saturation Voltage  
vs. Collector Current  
vs. Ambient Temperature  
10,000  
1.0  
0.9  
VCE = 5V  
VCE = 5V  
TA = -50°C  
0.8  
0.7  
1,000  
100  
TA = 150°C  
TA = 25°C  
0.6  
0.5  
TA = -50°C  
TA = 25°C  
TA = 150°C  
0.4  
0.3  
0.2  
10  
1
0.1  
10  
1000  
1
100  
1
10  
IC, COLLECTOR CURRENT (mA)  
Fig. 4, Base Emitter Voltage vs Collector Current  
100  
0.1  
IC, COLLECTOR CURRENT (mA)  
Fig. 3, DC Current Gain vs  
Collector Current  
100  
10  
1
VCE = 5V  
10  
1
IC, COLLECTOR CURRENT (mA)  
Fig. 5, Gain Bandwidth Product vs  
Collector Current  
3 of 5  
www.diodes.com  
May 2015  
© Diodes Incorporated  
MMBTA92  
Document number: DS30060 Rev. 12 - 2  
MMBTA92  
Package Outline Dimensions  
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version  
All 7°  
H
GAUGE PLANE  
SOT23  
0.25  
Dim  
A
B
C
D
F
G
H
J
Min  
Max  
0.51  
1.40  
2.50  
1.03 0.915  
0.60 0.535  
Typ  
J
K
K1  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.40  
1.30  
2.40  
a
M
A
L
L1  
2.05  
3.00  
1.83  
2.90  
0.05  
0.013 0.10  
K
K1  
L
L1  
M
a  
0.890 1.00 0.975  
0.903 1.10 1.025  
C
B
0.45  
0.25  
0.61  
0.55  
0.55  
0.40  
0.085 0.150 0.110  
8°  
D
G
F
All Dimensions in mm  
Suggested Pad Layout  
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.  
Y
Dimensions Value (in mm)  
Z
X
Y
C
E
2.9  
0.8  
0.9  
2.0  
1.35  
Z
C
X
E
Note:  
For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between  
device terminals and PCB tracking.  
4 of 5  
www.diodes.com  
May 2015  
© Diodes Incorporated  
MMBTA92  
Document number: DS30060 Rev. 12 - 2  
MMBTA92  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume  
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  
website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  
noted herein may also be covered by one or more United States, international or foreign trademarks.  
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the  
final and determinative format released by Diodes Incorporated.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  
failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its  
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  
Copyright © 2015, Diodes Incorporated  
www.diodes.com  
5 of 5  
www.diodes.com  
May 2015  
© Diodes Incorporated  
MMBTA92  
Document number: DS30060 Rev. 12 - 2  

相关型号:

MMBTA92S62Z

100mA, 300V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
TI

MMBTA92W

PNP Silicon Epitaxial Planar Transistor
SEMTECH

MMBTA92W

General Purpose Transistor
SECOS

MMBTA92_09

HIGH VOLTAGE PNP TRANSISTOR
UTC

MMBTA92_1

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
DIODES

MMBTA92_11

PNP Silicon High Voltage Transistor
MCC

MMBTA92_15

HIGH VOLTAGE PNP TRANSISTOR
UTC

MMBTA92_15

300V PNP SMALL SIGNAL TRANSISTOR IN SOT23
DIODES

MMBTA92_15

PNP Transistors
KEXIN

MMBTA92_2

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
DIODES

MMBTA93

HIGH VOLTAGE TRANSISTOR PNP SILICON
ZOWIE

MMBTA93

PNP (HIGH VOLTAGE TRANSISTOR)
SAMSUNG