MBR2090CT [DIODES]
20A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER; 20A高压肖特基整流器
| 型号： | MBR2090CT |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 20A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER |
| 文件： | 总2页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR2070CT - MBR20100CT
20A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
Features
·
·
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
TO-220AB
·
·
·
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material: UL Flammability
Classification Rating 94V-0
L
Dim
A
B
C
D
E
Min
14.22
9.65
2.54
5.84
¾
Max
15.88
10.67
3.43
B
M
C
D
E
·
·
K
A
6.86
6.35
1
2
3
G
H
J
12.70
2.29
0.51
14.73
2.79
G
1.14
Mechanical Data
J
N
K
L
3.53Æ 4.09Æ
·
·
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Body
Weight: 2.24 grams (approx)
Mounting Position: Any
3.56
1.14
0.30
2.03
4.83
1.40
0.64
2.92
H
H
P
M
N
P
Pin 1
Pin 2
Pin 3
·
·
·
·
Case
All Dimensions in mm
Marking: Type Number
@ TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MBR
2070CT
MBR
2080CT
MBR
2090CT
MBR
20100CT
Characteristic
Symbol
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
70
49
80
56
90
63
100
70
V
VR(RMS)
IO
RMS Reverse Voltage
V
A
Average Rectified Output Current
(Note 1)
20
@ TC = 125°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
150
A
Forward Voltage Drop
@ IF = 10A, Tj = 125°C
0.75
0.85
0.85
0.95
@ IF = 10A, Tj = 25°C
@ IF = 20A, Tj = 125°C
@ IF = 20A, Tj = 25°C
VFM
V
Peak Reverse Current
at Rated DC Blocking Voltage
@TA
= 25°C
0.15
150
IRM
mA
@ TA = 125°C
Cj
Typical Junction Capacitance (Note 2)
1000
2.0
pF
RqJc
dV/dt
Typical Thermal Resistance Junction to Case (Note 1)
Voltage Rate of Change
°C/W
V/ms
10000
Tj
TSTG
-65 to +150
-65 to +175
Operating and Storage Temperature Range
°C
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V DC.
DS30019 Rev. C-2
1 of 2
MBR2070CT-MBR20100CT
20
16
12
50
10
8
4
1.0
TJ = 125°C
Pulse width = 300µs
2% duty cycle
0.1
0
0.2
0.4
0.6
0.8
1.0
0
50
100
150
TC, CASE TEMPERATURE (°C)
Fig. 1 Fwd Current Derating Curve
VF, INSTANTANEOUS FWD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
300
250
200
150
4000
1000
100
50
0
100
0.1
1.0
10
100
1
10
100
VR, REVERSE VOLTAGE (V)
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
Fig. 4 Typical Junction Capacitance
DS30019 Rev. C-2
2 of 2
MBR2070CT-MBR20100CT
相关型号：
MBR2090CT-011
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 90V V(RRM), Silicon, TO-220AB, 3 PIN
VISHAY
MBR2090CT-1
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 90V V(RRM), Silicon, TO-262AA, PLASTIC, TO-262, 3 PIN
SENSITRON
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