GBPC2508W [DIODES]
25A GLASS PASSIVATED BRIDGE RECTIFIER; 25A玻璃钝化整流桥型号: | GBPC2508W |
厂家: | DIODES INCORPORATED |
描述: | 25A GLASS PASSIVATED BRIDGE RECTIFIER |
文件: | 总2页 (文件大小:74K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
GBPC25005/W - GBPC2510/W
25A GLASS PASSIVATED BRIDGE RECTIFIER
Features
GBPC
·
·
·
·
·
·
Glass Passivated Die Construction
H
Diffused Junction
Low Reverse Leakage Current
Low Power Loss, High Efficiency
Surge Overload Rating to 300A Peak
B
GBPC / GBPC-W
E
Dim
A
MinMax
28.30
7.40
28.80
8.25
Electrically Isolated Metal Base for Maximum
Heat Dissipation
A
C
B
H
C
16.10
18.80
13.80
17.10
21.30
14.80
·
·
Case to Terminal Isolation Voltage 1500V
(AC)
( - )
E
UL Listed Under Recognized Component
Index, File Number E94661
(+)
J
A
C
G
(AC)
Hole for #10 screw
H
5.08Æ
17.60
10.90
0.97Æ
31.80
17.60
5.59Æ
18.60
11.90
1.07Æ
¾
G
Mechanical Data
J
K
L
GBPC-W
·
·
Case: Molded Plastic with Heatsink Internally
Mounted in the Bridge Encapsulation
H
B
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
M
M
P
L
18.60
·
·
·
·
·
·
Polarity: As Marked on Case
All Dimensions in mm
Mounting: Through Hole for #10 Screw
Mounting Torque: 8.0 Inch-pounds Maximum
GBPC Weight: 20 grams (approx.)
GBPC-W Weight: 14 grams (approx.)
Mounting Position: Any
A
H
P
(AC)
( + )
“W” Suffix Designates Wire Leads
P
A
K
No Suffix Designates Faston Terminals
( - )
(AC)
@ TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
GBPC25 GBPC25 GBPC25 GBPC25 GBPC25 GBPC25 GBPC25
Characteristic
Symbol
Unit
005/W 01/W
02/W
04/W
06/W
08/W
10/W
1000
700
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
50
35
100
70
200
400
600
800
V
VR(RMS)
IO
RMS Reverse Voltage
140
280
25
420
560
V
A
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
@ TC = 60°C
IFSM
8.3ms single half sine-wave superimposed on rated load
(JEDEC Method)
300
1.1
A
Forward Voltage (per element)
@ IF = 12.5A
VFM
IR
V
Peak Reverse Current
at Rated DC Blocking Voltage
@ TC = 25°C
@ TC = 125°C
5.0
500
mA
I2t Rating for Fusing
(Note 1)
I2t
Cj
374
300
A2s
pF
Typical Junction Capacitance
Typical Thermal Resistance per leg
Operating and Storage Temperature Range
(Note 2)
RqJC
Tj, TSTG
(Note 3)
1.3
°C/W
°C
-65 to +150
Notes:
1. Non-repetitive, for t > 1.0ms and t < 8.3ms.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance junction to case mounted on heatsink.
DS21209 Rev. G-2
1 of 2
GBPC25005/W - GBPC2510/W
40
30
20
100
10
Mounted on a
220 x 220 x 50 mm
AL plate heatsink
1.0
0.1
0.01
10
0
Tj = 25°C
Resistive or
Inductive load
Pulse Width = 300µs
0
25
50
75
100
125
150
1.6
1.8
1.4
0
0.2 0.4 0.6 0.8 1.0 1.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics (per element)
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward. Current Derating Curve
400
300
1000
Single Half-Sine Wave
(JEDEC Method)
f = 1 Mhz
Tj = 25°C
200
100
100
0
Tj = 150°C
10
1
10
100
0.1
1.0
VR, REVERSE VOLTAGE (V)
10
100
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Surge Current
Fig. 4 Typical Junction Capacitance (per element)
100
Tj = 125°C
Tj = 130°C
10
1.0
0.1
Tj = 25°C
50V - 400V
600V - 1000V
0.01
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics (per element)
DS21209 Rev. G-2
2 of 2
GBPC25005/W - GBPC2510/W
相关型号:
GBPC2508W1
Bridge Rectifier Diode, 1 Phase, 25A, 800V V(RRM), Silicon, PLASTIC, GBPC-W, 4 PIN
VISHAY
GBPC2508W1-E4
DIODE 25 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, GBPC-W, 4 PIN, Bridge Rectifier Diode
VISHAY
GBPC2508WPBF
Bridge Rectifier Diode, 1 Phase, 25A, 800V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-4
INFINEON
©2020 ICPDF网 联系我们和版权申明