FZT655 [DIODES]
SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR; SOT223 NPN硅平面高性能晶体管
| 型号： | FZT655 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR |
| 文件： | 总2页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT223 NPN SILICON PLANAR
FZT655
HIGH PERFORMANCE TRANSISTOR
✪
FEATURES
ISSUE 3 FEBRUARY 1995
C
*
Low saturation voltage
COMPLEMENTARY TYPE FZT755
PARTMARKING DETAIL FZT655
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
150
Collector-Emitter Voltage
Emitter-Base Voltage
150
V
5
V
Peak Pulse Current
2
A
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
IC
1
2
A
Ptot
W
°C
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT
V
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
150
150
5
IC=100µA
Collector-Emitter
Breakdown Voltage
V
V
IC=10mA*
Emitter-Base
Breakdown Voltage
IE=100µA
Collector Cut-Off Current ICBO
0.1
0.1
VCB=125V
VEB=3V
µA
µA
Emitter Cut-Off Current
IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
0.5
0.5
V
V
IC=500mA, IB=50mA*
IC=1A, IB=200mA*
Base-Emitter
Saturation Voltage
VBE(sat)
VBE(on)
hFE
1.1
V
IC=500mA, IB=50mA*
Base-Emitter
Turn-On Voltage
1.0
V
IC=500mA, VCE =5V*
Static Forward Current
Transfer Ratio
50
50
20
IC=10mA, VCE =5V*
IC=500mA, VCE =5V*
IC=1A, VCE =5V*
300
20
Transition Frequency
fT
30
MHz
pF
IC=10mA, VCE =20V
f=20MHz
Output Capacitance
Cobo
VCB =10V, f=1MHz
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
3 - 211
FZT655
TYPICAL CHARACTERISTICS
I
- Collector Current (Amps)
I
- Collector Current (Amps)
hFE v IC
VCE(sat) v IC
I
- Collector Current (Amps)
I
- Collector Current (Amps)
VBE(sat) v IC
VBE(on) v IC
10
1
0.1
0.01
µ
1
10
100
1000
VCE - Collector Emitter Voltage (V)
I
- Collector Current (Amps)
Switching Speeds
Safe Operating Area
3 - 212
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