ES1D [DIODES]
1.0A SURFACE MOUNT SUPER-FAST RECTIFIER; 1.0A表面装载超快速整流器
| 型号： | ES1D |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 1.0A SURFACE MOUNT SUPER-FAST RECTIFIER |
| 文件： | 总2页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ES1A - ES1G
1.0A SURFACE MOUNT SUPER-FAST RECTIFIER
Features
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Glass Passivated Die Construction
Super-Fast Recovery Time For High Efficiency
Low Forward Voltage Drop and High Current Capability
Surge Overload Rating to 30A Peak
SMA
Min
B
Dim
A
Max
2.92
4.60
1.63
0.31
5.59
0.20
1.52
2.62
Ideally Suited for Automated Assembly
2.29
4.00
1.27
0.15
4.80
0.10
0.76
2.01
Mechanical Data
ꢀ
A
J
B
C
D
Case: Molded Plastic
Case Material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solder Plated Terminal - Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band or Cathode Notch
Marking: Type Number & Date Code: See Below
Ordering Information: See Below
C
ꢀ
D
E
ꢀ
ꢀ
G
H
ꢀ
ꢀ
ꢀ
ꢀ
G
J
H
E
All Dimensions in mm
Weight: 0.064 grams (approx.)
@ TA = 25ꢁC unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
ES1A
ES1B
100
70
ES1C
ES1D
200
ES1G
400
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
50
150
V
VR(RMS)
IO
RMS Reverse Voltage
35
105
1.0
140
280
V
A
Average Rectified Output Current
@ TT = 110ꢁC
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
IFSM
30
A
Forward Voltage Drop
@ IF = 0.6A
@ IF = 1.0A
0.90
0.98
ꢂ
1.25
VFM
IRM
V
5.0
200
Peak Reverse Current
at Rated DC Blocking Voltage
@ TA
= 25ꢁC
ꢃA
@ TA = 100ꢁC
trr
CT
Reverse Recovery Time (Note 1)
Typical Total Capacitance (Note 2)
20
10
40
ns
pF
RꢄJT
Tj, TSTG
Typical Thermal Resistance, Junction to Terminal (Note 3)
Operating and Storage Temperature Range
ꢁC/W
ꢁC
-65 to +150
(Note 4)
Ordering Information
Device*
Packaging
Shipping
5000/Tape & Reel
ES1x-13
SMA
Notes:
1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Unit mounted on PC board with 5.0 mm2 (0.013 mm thick) copper pad as heat sink.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
*x = Device type, e.g. ES1A-13.
Marking Information
XXXX = Product type marking code, ex. ES1A
= Manufacturers’ code marking
YWW = Date code marking
Y = Last digit of year ex: 2 for 2002
WW = Week code 01 to 52
YWW
XXXX
DS14001 Rev. 8 - 2
1 of 2
ES1A - ES1G
10
1.5
1.0
ES1A - ES1D
ES1G
1.0
0.5
0.1
Tj = 25°C
IF Pulse Width: 300 µs
0
0.01
25
50
75
100
125
150
175
0
0.4
0.8
1.2
1.6
TT, TERMINAL TEMPERATURE (°C)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
Fig. 1 Forward Current Derating Curve
30
100
Single Half-Sine-Wave
(JEDEC Method)
Tj = 100°C
20
10
10
1.0
0.1
Tj = 25°C
0
1
10
100
0
40
80
120
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Surge Current Derating Curve
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
trr
+0.5A
50Ω NI (Non-inductive)
10Ω NI
Device
Under
Test
(-)
0A
(+)
(-)
Pulse
Generator
(Note 2)
50V DC
Approx
-0.25A
1.0Ω
NI
(+)
Oscilloscope
(Note 1)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
-1.0A
Set time base for 50/100 ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
DS14001 Rev. 8 - 2
2 of 2
ES1A - ES1G
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