DMT6015LFV_18 [DIODES]
60V N-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | DMT6015LFV_18 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 60V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总7页 (文件大小：547K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMT6015LFV
60V N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI3333-8 (TYPE UX)
Product Summary
Features and Benefits
Low RDS(ON) – Ensures On-State Losses are Minimized
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
ID Max
BVDSS
RDS(ON) Max
TC = +25°C
16mΩ @ VGS = 10V
22mΩ @ VGS = 4.5V
35A
28A
Occupies just 33% of the Board Area Occupied by SO-8 Enabling
Smaller End Product
60V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
Mechanical Data
®
Case: PowerDI 3333-8 (Type UX)
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)), yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (Approximate)
Motor Control
DC-DC Converters
Power Management
PowerDI3333-8 (Type UX)
Pin1
D
S
S
S
G
G
D
Gate Protection
Diode
D
S
D
D
Internal Schematic
Top View
Bottom View
Ordering Information (Note 4)
Part Number
DMT6015LFV-7
DMT6015LFV-13
Case
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
PowerDI3333-8 (Type UX)
PowerDI3333-8 (Type UX)
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See http://www.diodes.com/quality/lead_free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
T6V= Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 18 = 2018)
WW = Week Code (01 to 53)
T6V
PowerDI is a registered trademark of Diodes Incorporated.
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March 2018
© Diodes Incorporated
DMT6015LFV
Document number: DS38454 Rev. 5 - 2
DMT6015LFV
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
60
Unit
V
Gate-Source Voltage
±16
V
VGSS
TA = +25°C
TA = +70°C
TC = +25°C
9.5
7.6
A
A
ID
Continuous Drain Current (Note 5) VGS = 10V
35
22
ID
IDM
IS
TC = +100°C
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L = 0.1mH
60
2
A
A
60
A
ISM
17
A
IAS
Avalanche Energy, L = 0.1mH
14.5
75
mJ
V
EAS
VSPIKE
t = 10µs
VDS Spike
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
2.2
30
57
35
Unit
W
TA = +25°C
Total Power Dissipation (Note 5)
PD
W
TC = +25°C
Steady State
t<10s
Thermal Resistance, Junction to Ambient (Note 5)
RθJA
°C/W
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
4.2
RθJC
-55 to +150
°C
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
60
—
—
—
—
—
—
1
V
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 48V, VGS = 0V
VGS = ±16V, VDS = 0V
µA
µA
±10
IGSS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
0.5
—
—
—
—
2.5
16
V
mΩ
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = 250μA
VGS = 10V, ID = 10A
VGS = 4.5V, ID = 6A
VGS = 0V, IS = 1A
11.7
15.7
0.7
Static Drain-Source On-Resistance
22
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1103
251
20
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
VDS = 30V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
1.5
VDS = 0V, VGS = 0V, f = 1MHz
8.9
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Qg
18.9
3
Qg
VDS = 30V, ID = 10A
Qgs
Qgd
tD(ON)
tR
Gate-Drain Charge
2.8
Turn-On Delay Time
4.1
Turn-On Rise Time
7.1
VGS = 10V, VDS = 30V,
Rg = 6Ω, ID = 10A
Turn-Off Delay Time
19.5
8.6
tD(OFF)
tF
Turn-Off Fall Time
Body Diode Reverse Recovery Time
tRR
21.2
13.2
IF = 10A, di/dt = 100A/µs
Body Diode Reverse Recovery Charge
QRR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
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© Diodes Incorporated
DMT6015LFV
Document number: DS38454 Rev. 5 - 2
DMT6015LFV
30
25
20
15
10
5
30
25
20
15
10
5
V
= 5.0V
DS
V
= 10V
GS
V
= 4.5V
GS
V
= 4V
GS
V
= 3.5V
GS
V
= 3.0V
GS
T
= 150°C
A
T
= 125°C
A
T
= 25°C
A
T
= 85°C
A
T
= -55°C
A
V
= 2.5V
GS
0
0
1
1.5
2
2.5
3
3.5
0
0.5
1
1.5
2
2.5
3
VGS, GATE-SOURCE VOLTAGE (V)
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
Figure 2 Typical Transfer Characteristics
0.018
0.017
0.016
0.015
0.014
0.013
0.012
0.1
0.08
0.06
0.04
0.02
0
I
= 10A
D
V
= 4.5V
GS
I
= 6A
D
V
= 10V
GS
0.011
0.01
0
5
10
15
20
25
30
0
4
8
12
16
20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.024
0.022
0.02
1.8
1.6
1.4
1.2
V
= 10V
GS
V
= 4.5V
= 6A
GS
T
T
= 150°C
= 125°C
A
A
I
D
0.018
0.016
0.014
0.012
0.01
T
= 85°C
A
V
= 10V
GS
= 10A
I
D
T
= 25°C
A
1
0.8
0.6
T
= -55°C
A
0.008
0.006
0.004
0
5
10
15
20
25
30
-50 -25
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
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© Diodes Incorporated
DMT6015LFV
Document number: DS38454 Rev. 5 - 2
DMT6015LFV
2.2
2
0.03
0.025
0.02
1.8
1.6
1.4
V
= 4.5V
= 6A
GS
I
= 1mA
D
I
D
I
= 250µA
D
0.015
V
= 10V
GS
= 10A
I
D
1.2
1
0.01
0.8
0.005
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
TJ, JUNCTION TEMPERATURE (C)
Temperature
Figure 8 Gate Threshold Variation vs.
Figure 7 On-Resistance Variation with Temperature
10000
30
25
20
15
10
5
f=1MHz
C
iss
1000
100
C
oss
T
= 150°C
A
T
= 25°C
A
T
= 125°C
A
C
rss
T
= 85°C
T = -55°C
A
A
10
1
0
0
0
5
10
15
20
25
30
35
40
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
Figure 9 Diode Forward Voltage vs. Current
10
100
10
1
R
DS(on)
Limited
P
= 100µs
W
8
6
4
2
0
V
I
= 30V
DS
DC
= 10A
D
P
= 10s
P
W
= 1s
W
P
= 100ms
W
P
= 10ms
W
TJ(max) = 150°C
TC = 25°C
0.1
P
= 1ms
W
VGS = 10V
Single Pulse
DUT on 1 * MRP Board
0.01
0.1
1
10
100
0
4
8
12
16
20
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
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© Diodes Incorporated
DMT6015LFV
Document number: DS38454 Rev. 5 - 2
DMT6015LFV
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
0.001
D = 0.01
D = 0.005
RJA(t) = r(t) * RJA
D = Single Pulse
RJA = 126°C/W
Duty Cycle, D = t1/ t2
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
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© Diodes Incorporated
DMT6015LFV
Document number: DS38454 Rev. 5 - 2
DMT6015LFV
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI3333-8 (Type UX)
D
D1
A
A1
PowerDI3333-8
(Type UX)
Dim
Min
Max
0.85 0.80
0.05 --
Typ
A
A1
b
c
D
D1
D2
E
E1
E2
E2a
E2b
e
0.75
0.00
0.25
0.10
3.20
2.95
2.30
3.20
2.95
1.60
0.95
0.10
E1 E
0.40 0.32
0.25 0.15
3.40 3.30
3.15 3.05
2.70 2.50
3.40 3.30
3.15 3.05
2.00 1.80
1.35 1.15
0.30 0.20
0
c
L
E2a
E2b
E2
0.65 BSC
k
L
θ
0.50
0.30
0°
0.90 0.70
0.50 0.40
D2
k
12°
10°
All Dimensions in mm
L
b
e
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI3333-8 (Type UX)
X3
X2
8
Y4
Dimensions Value (in mm)
C
X
0.650
0.420
0.420
0.230
2.370
0.700
1.850
2.250
3.700
0.540
X1
Y1
Y2
X1
X2
X3
Y
Y1
Y2
Y3
Y4
Y3
Y
1
X
C
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DMT6015LFV
Document number: DS38454 Rev. 5 - 2
DMT6015LFV
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2018, Diodes Incorporated
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Document number: DS38454 Rev. 5 - 2
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