DMS3019SSD-13 [DIODES]
ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET; 非对称双N沟道增强型MOSFET型号: | DMS3019SSD-13 |
厂家: | DIODES INCORPORATED |
描述: | ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
文件: | 总10页 (文件大小:197K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DMS3019SSD
ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
•
DIOFET utilize a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:
•
•
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
•
Low RDS(on) – minimizes conduction loss
•
•
•
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.072 grams (approximate)
•
•
•
•
Low VSD – reducing the losses due to body diode
construction
Low Qrr – lower Qrr of the integrated Schottky reduces body
diode switching losses
Low gate capacitance (Qg/Qgs) ratio – reduces risk of shoot-
through or cross conduction currents at high frequencies
Avalanche rugged – IAR and EAR rated
•
•
•
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Q1
D1
Q2
D2
D2
G2
D2
G1
S1
S2/D1
S2/D1
S2/D1
G1
G2
S1
S2
N-Channel MOSFET +
Integrated Schottky Diode
N-Channel MOSFET
Top View
Internal Schematic
Top View
Ordering Information (Note 3)
Part Number
DMS3019SSD-13
Case
SO-8
Packaging
2500 / Tape & Reel
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Top View
8
5
Logo
S3019SD
YY WW
Part no.
Week: 01 ~ 53
Year: “09” = 2009
1
4
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© Diodes Incorporated
DMS3019SSD
Document number: DS35053 Rev. 2 - 2
DMS3019SSD
Maximum Ratings – Q1 @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
30
Unit
V
Gate-Source Voltage
±12
V
VGSS
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
Steady
Continuous Drain Current (Note 4) VGS = 10V
State
7.0
5.6
A
A
A
ID
ID
ID
Steady
Continuous Drain Current (Note 5) VGS = 10V
State
9.0
7.0
Steady
Continuous Drain Current (Note 5) VGS = 4.5V
State
8.0
6.5
Pulsed Drain Current (Note 6)
40
13
A
A
IDM
Avalanche Current (Notes 6 & 7)
IAR
Repetitive Avalanche Energy (Notes 6 & 7) L = 0.3mH
25.4
mJ
EAR
Maximum Ratings – Q2 @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
30
Unit
V
Gate-Source Voltage
±20
V
VGSS
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
Steady
Continuous Drain Current (Note 4) VGS = 10V
State
5.7
4.6
A
A
A
ID
ID
ID
Steady
Continuous Drain Current (Note 5) VGS = 10V
State
7.0
5.6
Steady
Continuous Drain Current (Note 5) VGS = 4.5V
State
6.0
4.7
Pulsed Drain Current (Note 6)
40
16
A
A
ID
Avalanche Current (Notes 6 & 7)
IAR
EAR
Repetitive Avalanche Energy (Notes 6 & 7) L = 0.1mH
12.8
mJ
Thermal Characteristics
Characteristic
Power Dissipation (Note 4)
Symbol
PD
Value
1.19
Unit
W
107
°C/W
W
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4)
Power Dissipation (Note 5)
RθJA
1.79
PD
70
°C/W
°C
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5)
Operating and Storage Temperature Range
RθJA
-55 to +150
TJ, TSTG
Notes:
4. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout. The value in any given application depends on the user’s specific
board design. Device contains two active die running at equal power.
5. Device mounted on 1 inch x 1 inch FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Device contains two active die running
at equal power.
6. Repetitive rating, pulse width limited by junction temperature.
7. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C
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© Diodes Incorporated
DMS3019SSD
Document number: DS35053 Rev. 2 - 2
DMS3019SSD
Electrical Characteristics – Q1 @ T = 25°C unless otherwise stated
A
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
30
-
-
-
-
-
V
BVDSS
IDSS
VGS = 0V, ID = 1mA
0.1
mA
nA
VDS = 30V, VGS = 0V
VGS = ±12V, VDS = 0V
-
±100
IGSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
1.0
-
-
2.4
V
VGS(th)
VDS = VGS, ID = 250μA
VGS = 10V, ID = 9A
VGS = 4.5V, ID = 7A
VDS = 5V, ID = 9A
VGS = 0V, IS = 1A
10
12
15
18
mΩ
Static Drain-Source On-Resistance
RDS (ON)
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
-
-
5
-
S
V
|Yfs|
VSD
0.4
1
-
-
-
-
-
-
-
-
-
-
-
-
1932
154
-
-
-
-
-
-
-
-
-
-
-
-
Ciss
Coss
Crss
Rg
VDS = 15V, VGS = 0V,
f = 1.0MHz
Output Capacitance
pF
121
Reverse Transfer Capacitance
Gate Resistance
2.7
Ω
VDS = 0V, VGS = 0V, f = 1MHz
18.1
42.0
4.5
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Qg
VDS = 15V, VGS = 4.5V, ID = 9A
Qg
nC
ns
Qgs
Qgd
tD(on)
tr
VDS = 15V, VGS = 10V, ID = 9A
4.0
Gate-Drain Charge
6.16
7.22
36.76
5.38
Turn-On Delay Time
Turn-On Rise Time
VGS = 10V, VDS = 15V,
RG = 3Ω, RL = 1.7Ω
Turn-Off Delay Time
tD(off)
tf
Turn-Off Fall Time
Notes:
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
30
25
30
V
= 4.5V
GS
V
= 4.0V
V
= 5V
25
20
15
10
5
GS
DS
V
= 3.5V
GS
20
15
10
5
V
= 3.0V
GS
V
= 2.5V
GS
V
= 150°C
GS
V
= 125°C
= 85°C
GS
V
GS
V
V
= 25°C
GS
V
= 2.2V
V
= 2.0V
GS
GS
= -55°C
GS
0
0
0
0
0.5
1
1.5
2
0.5
1
1.5
2
2.5
3
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
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DMS3019SSD
Document number: DS35053 Rev. 2 - 2
DMS3019SSD
0.05
0.04
0.04
0.03
V
= 4.5V
GS
0.03
0.02
T
= 150°C
A
0.02
T
= 125°C
= 85°C
A
T
A
V
= 4.5V
GS
T
= 25°C
A
0.01
0
0.01
0
T
= -55°C
A
V
= 10V
GS
0
5
10
15
20
25
30
0
5
10
ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
15
20
25
30
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
vs. Drain Current and Temperature
0.03
0.02
1.6
1.4
1.2
V
= 4.5V
GS
I
= 10A
D
V
= 10V
GS
I
= 20A
D
V
= 4.5V
GS
I
= 10A
D
1.0
0.01
V
= 10V
GS
I
= 20A
D
0.8
0.6
0
-50 -25
-50 -25
0
25
50
75 100 125 150
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
Fig. 5 On-Resistance Variation with Temperature
20
16
3.0
2.5
2.0
1.5
1.0
T
= 25°C
A
12
8
I
= 100mA
D
4
0
0.5
0
0
0.2
0.4
0.6
0.8
1.0
1.2
-50 -25
0
25
50
75 100 125 150
VSD, SOURCE-DRAIN VOLTAGE (V)
TA, AMBIENT TEMPERATURE (°C)
Fig. 8 Diode Forward Voltage vs. Current
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
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DMS3019SSD
Document number: DS35053 Rev. 2 - 2
DMS3019SSD
10,000
1,000
10,000
1,000
f = 1MHz
T
= 125°C
= 85°C
A
C
iss
T
A
100
C
oss
C
rss
100
10
10
1
T
= 25°C
A
0
10
20
30
0
5
10
15
20
25
30
VDS, DRAIN-SOURCE VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
Fig. 9 Typical Total Capacitance
10
8
V
I
= 15V
DS
= 12.7A
D
6
4
2
0
0
5
10 15 20 25 30 35 40 45
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
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© Diodes Incorporated
DMS3019SSD
Document number: DS35053 Rev. 2 - 2
DMS3019SSD
Electrical Characteristics – Q2 @ T = 25°C unless otherwise stated
A
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
30
-
-
-
-
-
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
1.0
μA
nA
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
-
±100
IGSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
1.0
-
-
2.4
V
VGS(th)
VDS = VGS, ID = 250μA
VGS = 10V, ID = 10A
VGS = 4.5V, ID = 7.5A
VDS = 5V, ID = 10A
VGS = 0V, IS = 1A
15
25
23
33
mΩ
Static Drain-Source On-Resistance
RDS (ON)
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
-
-
2.5
-
S
V
|Yfs|
VSD
0.65
1.0
-
478.9
96.7
61.4
1.1
-
Ciss
Coss
Crss
Rg
VDS = 15V, VGS = 0V,
f = 1.0MHz
-
-
Output Capacitance
pF
-
-
Reverse Transfer Capacitance
Gate Resistance
0.4
1.6
Ω
VDS = 0V, VGS = 0V, f = 1MHz
-
-
-
-
-
-
-
-
5.0
-
-
-
-
-
-
-
-
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Qg
VDS = 15V, VGS = 4.5V, ID = 10A
10.5
1.8
Qg
nC
ns
Qgs
Qgd
tD(on)
tr
VDS = 15V, VGS = 10V, ID = 10A
1.6
Gate-Drain Charge
2.9
Turn-On Delay Time
7.9
Turn-On Rise Time
VGS = 10V, VDS = 15V,
RG = 3Ω, RL = 1.5Ω
14.6
3.1
Turn-Off Delay Time
tD(off)
tf
Turn-Off Fall Time
Notes:
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
20
15
30
V
= 10V
GS
V
= 5V
DS
25
20
15
V
= 4.5V
GS
V
= 4.0V
GS
V
= 3.5V
GS
10
5
V
= 150°C
GS
V
= 125°C
= 85°C
GS
10
5
V
GS
V
= 3.0V
V
= 25°C
GS
GS
V
= 2.5V
GS
V
= -55°C
GS
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 Typical Output Characteristic
2
2.5
3
3.5
4
4.5
5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 13 Typical Transfer Characteristic
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DMS3019SSD
Document number: DS35053 Rev. 2 - 2
DMS3019SSD
0.05
0.04
0.04
0.03
V
= 10V
GS
T
= 150°C
= 125°C
A
T
A
0.03
0.02
T
= 85°C
A
0.02
V
= 4.5V
GS
T
= 25°C
A
V
= 10V
GS
T
= -55°C
A
0.01
0
0.01
0
0
5
10
15
20
25
30
0
5
10
ID, DRAIN CURRENT (A)
Fig. 15 Typical On-Resistance
vs. Drain Current and Temperature
15
20
25
30
ID, DRAIN-SOURCE CURRENT (A)
Fig. 14 Typical On-Resistance
vs. Drain Current and Gate Voltage
1.7
1.5
0.06
0.05
0.04
V
= 4.5V
= 5A
GS
I
D
V
= 10V
GS
1.3
1.1
I
= 10A
D
V
= 4.5V
= 5A
GS
I
D
0.03
0.02
0.9
V
= 10V
GS
I
= 10A
D
0.01
0
0.7
0.5
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
TA, AMBIENT TEMPERATURE (°C)
Fig. 16 On-Resistance Variation with Temperature
Fig. 17 On-Resistance Variation with Temperature
20
18
2.0
1.8
1.6
1.4
1.2
1.0
16
14
12
10
8
T
= 25°C
A
I
= 1mA
D
I
= 250µA
D
6
4
0.8
0.6
2
0
-50 -25
0
25
50
75 100 125 150
0.2
0.4
0.6
0.8
1.0
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
TA, AMBIENT TEMPERATURE (°C)
Fig. 19 Diode Forward Voltage vs. Current
Fig. 18 Gate Threshold Variation vs. Ambient Temperature
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DMS3019SSD
Document number: DS35053 Rev. 2 - 2
DMS3019SSD
10,000
1,000
1,000
100
10
f = 1MHz
C
iss
T
= 150°C
A
T
= 125°C
A
C
100
oss
C
rss
T
= 85°C
A
10
1
T
= 25°C
A
0
5
10
15
20
25
30
0
5
10
15
20
25
30
VDS, DRAIN-SOURCE VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 21 Typical Leakage Current
vs. Drain-Source Voltage
Fig. 20 Typical Total Capacitance
10
8
V
= 15V
DS
6
I
= 10A
D
4
2
0
0
2
4
6
8
10
12
Qg, TOTAL GATE CHARGE (nC)
Fig. 22 Gate-Charge Characteristics
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
R
(t) = r(t) * R
θJA
θJA
R
= 113°C/W
θJA
0.01
P(pk)
T
D = 0.01
t
1
t
2
D = 0.005
- T = P * R (t)
J
A
θJA
Duty Cycle, D = t /t
1
2
D = Single Pulse
0.001
0.00001 0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (s)
Fig. 23 Transient Thermal Response
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DMS3019SSD
Document number: DS35053 Rev. 2 - 2
DMS3019SSD
Package Outline Dimensions
SO-8
Min
-
Dim
A
Max
1.75
0.20
1.50
0.25
0.5
A1
A2
A3
b
0.10
1.30
0.15
0.3
E1
E
Gauge Plane
Seating Plane
A1
L
Detail ‘A’
D
4.85
5.90
3.85
4.95
6.10
3.95
E
7°~9°
h
E1
e
°
45
1.27 Typ
Detail ‘A’
A2
A3
A
h
-
0.35
0.82
8°
L
0.62
b
e
θ
0°
D
All Dimensions in mm
Suggested Pad Layout
X
Dimensions Value (in mm)
X
Y
C1
C2
0.60
1.55
5.4
C1
1.27
C2
Y
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DMS3019SSD
Document number: DS35053 Rev. 2 - 2
DMS3019SSD
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
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© Diodes Incorporated
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Document number: DS35053 Rev. 2 - 2
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