DMP3028LK3-13_技术文档

DMP3028LK3

30V P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features



100% Unclamped Inductive Switch (UIS) Test In Production

Low On-Resistance

I_D

V_(BR)DSS

R_DS(on)

T_C= +25°C

Fast Switching Speed

-27A

-22A

25mΩ @ V_GS= -10V

38mΩ @ V_GS= -4.5V

-30V

Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

Description

This MOSFET is designed to minimize the on-state resistance

(R_DS(ON)) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

Mechanical Data



Case: TO252

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Matte Tin Finish Annealed over Copper Leadframe.

Solderable per MIL-STD-202, Method 208 e3

Weight: 0.33 grams (Approximate)

Applications



Backlighting

DC-DC Converters

Power Management Functions



D

TO252

G

S

G

S

Equivalent Circuit

Top View

Pin-Out

Ordering Information (Notes 4)

Product

Case

Packaging

DMP3028LK3-13

TO252

2,500/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html .

Marking Information

= Manufacturer’s Marking

P3028L= Product Type Marking Code

.

YYWW = Date Code Marking

P3028L

YYWW

YY = Year (ex: 14 = 2014)

WW = Week (01 - 53)

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December 2014

DMP3028LK3

Document Number DS37257 Rev. 2 - 2

DMP3028LK3

Maximum Ratings (@T_A= +25°C, unless otherwise specified.)

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

-30

Units

V

Gate-Source Voltage

±20

V_GSS

Steady

State

T_C= +25°C

-27

-22

A

I_D

T_C= +70°C

T_A= +25°C

T_A= +70°C

Continuous Drain Current (Note 6) V_GS= -10V

-11

-8.6

t<10s

Maximum Body Diode Continuous Current

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

Avalanche Current (Note 7) L = 0.1mH

-2.5

-40

-22

24

A

I_S

I_DM

IAS

A

Avalanche Energy (Note 7) L = 0.1mH

EAS

mJ

Thermal Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

1.6

Units

T_A= +25°C

Total Power Dissipation (Note 5)

W

P_D

R_θJA

P_D

1.0

T_A= +70°C

Steady state

t<10s

77

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

°C/W

W

34

2.8

T_A= +25°C

T_A= +70°C

Steady state

t<10s

1.8

45

29

Thermal Resistance, Junction to Ambient (Note 6)

R_θJA

°C/W

°C

Thermal Resistance, Junction to Case (Note 6)

Operating and Storage Temperature Range

4.5

R_θJC

-55 to +150

T_J,T_STG

Electrical Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

Symbol

Min

Typ

Max

Unit

Test Condition

-30

—

-1

V

BV_DSS

I_DSS

—

V_GS= 0V, I_D= -250µA

V_DS= -30V, V_GS= 0V

V_GS= 20V, V_DS= 0V

µA

nA

Zero Gate Voltage Drain Current T_J= +25°C

Gate-Source Leakage

I_GSS

—

100

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

-1

—

20

-2.4

25

V

mΩ

V

V_GS(th)

R_DS(ON)

V_SD

V_DS= V_GS, I_D= -250µA

V_GS= -10V, I_D= -7A

V_GS= -4.5V, I_D= -6.2A

V_GS= 0V, I_S= -2.1A

Static Drain-Source On-Resistance

29

38

Diode Forward Voltage

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

-0.7

-1.2

1241

147

110

15

pF

Ω

C_iss

C_oss

C_rss

R_G

—

V_DS= -15V, V_GS= 0V

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

V_DS= 0V, V_GS= 0V, f = 1MHz

VDS = -15V, ID = -7A

22

nC

ns

Total Gate Charge (V_GS= -10V)

Total Gate Charge (V_GS= -4.5V)

Gate-Source Charge

Q_g

11

Q_g

3.5

Q_gs

Q_gd

t_D(on)

t_r

Gate-Drain Charge

4.7

Turn-On Delay Time

9.7

V_GS= -10V, V_DD= -15V,

R_GEN= 6Ω

Turn-On Rise Time

17.1

60.5

40.4

Turn-Off Delay Time

t_D(off)

t_f

I_D= -7A

Turn-Off Fall Time

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. I_ASand E_ASrating are based on low frequency and duty cycles to keep T_J= 25°C.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

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December 2014

DMP3028LK3

Document Number DS37257 Rev. 2 - 2

DMP3028LK3

20

15

10

5

20

15

V

= -10V

GS

V

= -3.5V

GS

V

= -5.0V

DS

V

= -4.0V

GS

= -4.5V

V

GS

V

= -5.0V

GS

V

= -3.0V

GS

10

5

T

= 85C

T

= 150C

A

T

= 125C

T

= 25C

A

V

= -2.5V

GS

T

= -55C

A

0

1

2

3

4

5

0

1

2

3

4

5

-V_DS, DRAIN -SOURCE VOLTAGE (V)

-V_GS, GATE-SOURCE VOLTAGE (V)

Figure 1 Typical Output Characteristics

Figure 2 Typical Transfer Characteristics

0.05

0.04

0.03

0.02

0.01

0

0.05

0.04

0.03

0.02

0.01

0

V

= -4.5V

GS

T

= 150C

A

T

= 125C

A

T

= 85°C

A

V

= -4.5V

GS

T

= 25°C

A

T

= -55°C

A

V

= -10V

GS

0

5

10

15

20

25

30

0

2

4

6

8

10 12 14 16 18 20

-I_D, DRAIN SOURCE CURRENT (A)

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

Figure 4 Typical On-Resistance vs.

Drain Current and Temperature

1.8

1.6

1.4

1.2

1

0.05

0.04

0.03

0.02

0.01

0

V

I

= -10V

GS

= -10A

D

V

I

= -5.0V

GS

= -5.0A

D

V

I

= -5V

GS

= -5A

V

I

= -10V

GS

= -10A

D

0.8

0.6

-50 -25

0

25

50

75 100 125 150

-50 -25

0

25

50

75

100 125 150

T_J, JUNCTION TEMPERATURE (C)

Figure 6 On-Resistance Variation with Temperature

Figure 5 On-Resistance Variation with Temperature

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December 2014

DMP3028LK3

Document Number DS37257 Rev. 2 - 2

DMP3028LK3

3

2.5

2

20

15

-I = 1mA

D

-I = 250µA

D

10

1.5

1

T = 150C

A

T = 125C

A

5

0

T = 85C

A

T = 25C

A

0.5

0

T = -55C

A

0

0.2

0.4

0.6

0.8

1

1.2

-50 -25

0

25

50

75 100 125 150

T_A, AMBIENT TEMPERATURE (°C)

-V_SD, SOURCE-DRAIN VOLTAGE (V)

Figure 7 Gate Threshold Variation vs. Ambient Temperature

Figure 8 Diode Forward Voltage vs. Current

10000

1000

100

10

9

8

7

6

5

4

3

2

1

0

T

= 150°C

A

T

= 125°C

A

T

= 85°C

A

V

I

= -15V

DS

= -7A

D

T

= 25°C

A

1

0.1

0

5

10

15

20

25

0

5

10

15

20

25

30

-V_DS, DRAIN-SOURCE VOLTAGE (V)

Q_g, TOTAL GATE CHARGE (nC)

Figure 9 Typical Drain-Source Leakage Current vs. Voltage

Figure 10 Gate-Charge Characteristics

10000

100

10

1

R

DS(on)

Limited

C

iss

1000

100

DC

P

= 10s

W

P

= 1s

W

P

= 100ms

W

P

= 10ms

W

P

= 1ms

W

P

= 100µs

W

0.1 T_J(max)= 150°C

T_A= 25°C

V_GS= 10V

Single Pulse

DUT on 1 * MRP Board

0.01

0.1

10

0

5

10

15

20

25

30

1

10

100

-V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 11 Typical Junction Capacitance

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 12 SOA, Safe Operation Area

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December 2014

DMP3028LK3

Document Number DS37257 Rev. 2 - 2

DMP3028LK3

1 _{D = 0.9}

D = 0.7

D = 0.5

D = 0.3

0.1 _{D = 0.1}

D = 0.05

D = 0.02

0.01 _{D = 0.01}

D = 0.005

R_thjc(t) = r(t) * R

thjc

Single Pulse

R_thjc= 4°C/W

Duty Cycle, D = t1/ t2

0.001

0.000001

0.00001

0.0001

0.001

0.01

0.1

1

10

t1, PULSE DURATION TIME (sec)

Figure 13 Transient Thermal Resistance

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December 2014

DMP3028LK3

Document Number DS37257 Rev. 2 - 2

DMP3028LK3

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.

E

A

b3

7°±1°

c

TO252 (DPAK)

Dim Min Max Typ

2.19 2.39 2.29

L3

A

A1 0.00 0.13 0.08

A2 0.97 1.17 1.07

D

A2

b

0.64 0.88 0.783

H

L4

b2 0.76 1.14 0.95

b3 5.21 5.46 5.33

c

D

0.45 0.58 0.531

6.00 6.20 6.10

D1 5.21

-

e

-

2.286

e

b(3x)

E

6.45 6.70 6.58

b2(2x)

E1 4.32

-

H

L

9.40 10.41 9.91

1.40 1.78 1.59

0.508

Gauge Plane

L3 0.88 1.27 1.08

L4 0.64 1.02 0.83

D1

Seating Plane

E1

a

0°

10°

-

L

A1

All Dimensions in mm

2.74REF

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

X1

Dimensions Value (in mm)

C

X

X1

Y

Y1

Y2

4.572

1.060

5.632

2.600

5.700

10.700

Y1

Y2

C

Y

X

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December 2014

DMP3028LK3

Document Number DS37257 Rev. 2 - 2

DMP3028LK3

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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December 2014

DMP3028LK3

Document Number DS37257 Rev. 2 - 2


型号：	DMP3028LK3-13
厂家：	DIODES INCORPORATED
描述：	Power Field-Effect Transistor, 27A I(D), 30V, 0.025ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2 PC 开关脉冲晶体管
文件：	总7页 (文件大小：400K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DMP3028LK3-13 [DIODES]

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