DMP1081UCB4-7 [DIODES]

Small Signal Field-Effect Transistor,;


型号：	DMP1081UCB4-7
厂家：	DIODES INCORPORATED
描述：	Small Signal Field-Effect Transistor,
文件：	总6页 (文件大小：355K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DMP1081UCB4

P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary (Typ. @ V_GS= -4.5V, T_A= +25°C)

Features



LD-MOS Technology with the Lowest Figure of Merit:

R_DS(ON)= 0.065Ω to Minimize On-State Losses

Q_g= 2.5nC for Ultra-Fast Switching

BV_DSS

R_DS(ON)

Q_g

Q_gd

I_D

-12V

0.065Ω

2.5nC

0.6nC

-3.3A



V_gs(TH)= -0.5V Typ. for a Low Turn-On Potential

CSP with Footprint 1.0mm × 1.0mm

Description

Height = 0.62mm for Low Profile

ESD = 3kV HBM Protection of Gate

This new generation MOSFET is designed to minimize the on-state

resistance (R_DS(ON)) and yet maintain superior switching performance,

making it ideal for high efficiency power management applications.

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

Applications



Case: U-WLB1010-4



Battery Management

Load Switch

Terminal Connections: See Diagram Below

Weight: 0.0018 grams (Approximate)

Battery Protection

U-WLB1010-4

ESD PROTECTED TO 3kV

Top View

Equivalent Circuit

Ordering Information (Note 4)

Part Number

Case

Packaging

DMP1081UCB4-7

U-WLB1010-4

3,000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

U-WLB1010-4

7A = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: E = 2017)

M = Month (ex: 9 = September)

Date Code Key

Year

2016

2017

2018

2019

2020

2021

2022

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

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August 2017

DMP1081UCB4

Document number: DS38597 Rev. 2 - 2

DMP1081UCB4

Maximum Ratings (@T_A= +25°C, unless otherwise specified.)

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

-12

-6

Unit

Gate-Source Voltage

V_GSS

Steady

Continuous Drain Current (Note 5) V_GS= -4.5V

State

T_A= +25°C

T_A= +70°C

T_A= +25°C

T_A= +70°C

-3.3

-2.7

I_D

Steady

Continuous Drain Current (Note 5) V_GS= -2.5V

State

-3.0

-2.4

I_D

Pulsed Drain Current (Note 6)

I_DM

Thermal Characteristics

Characteristic

Power Dissipation (Note 7)

Symbol

P_D

Value

0.82

Unit

150

°C/W

Thermal Resistance, Junction to Ambient @T_A= +25°C (Note 7)

Thermal Resistance, Junction to Case @T_C= +25°C (Note 7)

Power Dissipation (Note 5)

R_θJA

42.66

R_θJC

P_D

1.59

80.29

°C/W

°C

Thermal Resistance, Junction to Ambient @T_A= +25°C (Note 5)

Operating and Storage Temperature Range

R_θJA

-55 to +150

T_J, T_STG

Electrical Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

Gate-Source Breakdown Voltage

Symbol

Min

Typ

Max

Unit

Test Condition

-12

BV_DSS

BV_GSS

I_DSS

V_GS= 0V, I_D= -250μA

V_DS= 0V, I_G= -250μA

V_DS= -9.6V, V_GS= 0V

V_GS= -6V, V_DS= 0V

-6.0

-1

A

Zero Gate Voltage Drain Current T_J= +25°C

Gate-Source Leakage

-100

I_GSS

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

-0.35

-0.5

0.065

0.077

0.108

0.4

-0.65

0.08

0.1

V_GS(TH)

V_DS= V_GS, I_D= -250μA

V_GS= -4.5V, I_D= -500mA

V_GS= -2.5V, I_D= -500mA

V_GS= -1.5V, I_D= -500mA

V_GS= -0.9V, I_D= -100mA

V_DS= -6V, I_D= -500mA

V_GS= 0V, I_S= -500mA

Static Drain-Source On-Resistance

Ω

R_DS(ON)

0.13

Forward Transfer Admittance

Diode Forward Voltage

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

|Y_fs|

V_SD

-0.6

-1.0

213

119

54.4

2.5

350

C_iss

C_oss

C_rss

Q_g

V_DS= -6V, V_GS= 0V,

f = 1.0MHz

Output Capacitance

250

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

0.3

Q_gs

V_GS= -4.5V, V_DS= -6V,

I_D= -500mA

Gate-Drain Charge

0.6

Q_gd

Q_g(TH)

t_D(ON)

t_R

0.15

16.7

20.6

38.4

28.4

2.0

Gate Charge at V_TH

Turn-On Delay Time

Turn-On Rise Time

V_DS= -6V, V_GS= -2.5V,

R_G= 20Ω, I_D= -500mA

Turn-Off Delay Time

Turn-Off Fall Time

t_D(OFF)

t_F

Reverse Recovery Charge

Reverse Recovery Time

Q_RR

t_RR

V_DD= –4.0V, I_F= –0.5A,

di/dt =100A/μs

9.5

Notes:

5. Device mounted on FR-4 material with 1inch²(6.45cm²), 2oz. (0.071mm thick) Cu.

6. Repetitive rating, pulse width limited by junction temperature.

7. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to production testing.

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August 2017

DMP1081UCB4

Document number: DS38597 Rev. 2 - 2

DMP1081UCB4

5.0

4.5

= -6.0V

= -4.5V

= -5.0V

= -4.0V

4.0

3.5

= -3.0V

= -2.5V

= -2.0V

= -1.5V

3.0

2.5

2.0

1.5

1.0

= 150C

= 85C

= -1.2V

= -1.0V

T = 125C

= 25C

0.5

= -55C

0.5

1.0

1.5

2.0

2.5

3.0

0.5

1.0

1.5

2.0

-V_DS, DRAIN -SOURCE VOLTAGE (V)

-V_GS, GATE-SOURCE VOLTAGE (V)

Fig. 1 Typical Output Characteristics

Fig. 2 Typical Transfer Characteristics

0.10

0.08

0.20

0.18

= -4.5V

0.16

0.14

0.12

= 150C

= 125C

= -1.5V

= 85C

= 25C

0.10

0.08

0.06

0.04

= -2.5V

= -4.5V

= -6.0V

0.06

0.04

= -55C

0.02

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

-I_D, DRAIN SOURCE CURRENT (A)

Fig. 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

Fig. 4 Typical On-Resistance vs.

Drain Current and Temperature

1.6

1.4

0.16

0.14

= -2.5V

= -1.5A

0.12

0.10

0.08

0.06

0.04

= -2.5V

= -1.5A

1.2

1.0

= -4.5V

= -2.0A

= -4.5V

= -2.0A

0.8

0.6

0.02

-50 -25

T_J, JUNCTION TEMPERATURE (C)

Fig. 6 On-Resistance Variation with Temperature

75 100 125 150

-50 -25

75 100 125 150

T_J, JUNCTION TEMPERATURE (C)

Fig. 5 On-Resistance Variation with Temperature

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DMP1081UCB4

Document number: DS38597 Rev. 2 - 2

DMP1081UCB4

1.2

1.0

)

(

T = 150C

0.8

0.6

0.4

- I = 1mA

T = 125C

T = 85C

-I = 250µA

T = 25C

T = -55C

)

0.2

(

V^G

-50 -25

75 100 125 150

0.3

0.6

0.9

1.2

1.5

T_A, AMBIENT TEMPERATURE (°C)

-V_SD, SOURCE-DRAIN VOLTAGE (V)

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

Fig. 8 Diode Forward Voltage vs. Current

100,000

100

= 10µs

10,000

1,000

100

DS(on)

Limited

)

(

)

= 150°C

= 125°C

(

0.1

= 10s

= 85°C

= 25°C

= 1s

= 100ms

= 10ms

I ^D

= 1ms

= 150°C

I ^D

= 100µs

J(max)

T = 25°C

= -6V

Single Pulse

DUT on 1 * MRP Board

0.1

0.01

0.1

100

10 11 12

-V_DS, DRAIN-SOURCE VOLTAGE (V)

Fig. 9 Typical Drain-Source Leakage Current vs. Voltage

Fig. 10 SOA, Safe Operation Area

D = 0.7

D = 0.5

D = 0.3

0.1

D = 0.1

D = 0.9

D = 0.05

D = 0.02

0.01

D = 0.01

R(t) = r(t) * R

R_θJA(t) = r(t)* R

JAJA

D = 0.005

θJA

R = 153°C/W

R_θJA= 153 C/W



)

(

DDutuytCyyCclyec, lDe,=Dt1=/t2t1/ t2

Single Pulse

0.001

0.00001

0.0001

0.001

0.01

0.1

100

1,000

t1, PULSE DURATION TIME (sec)

Fig. 11 Transient Thermal Resistance

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August 2017

DMP1081UCB4

Document number: DS38597 Rev. 2 - 2

DMP1081UCB4

Package Outline Dimension

Please see http://www.diodes.com/package-outlines.html for the latest version.

U-WLB1010-4

Dim

Min

0.95





0.25



Max

1.05

0.62



0.35



Typ

1.00



0.38

0.30

0.50

0.25



All Dimensions in mm

Suggested Pad Layout

Please see http://www.diodes.com/package-outlines.html for the latest version.

U-WLB1010-4

ØD

Dimensions

Value (in mm)

0.50

0.25

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August 2017

DMP1081UCB4

Document number: DS38597 Rev. 2 - 2

DMP1081UCB4

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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DMP1081UCB4

Document number: DS38597 Rev. 2 - 2

DMP1081UCB4-7 [DIODES]

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