DMN61D8LVT-13 [DIODES]
Provides a more reliable and robust interface between sensitive logic and DC relay coils.;
| 型号： | DMN61D8LVT-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Provides a more reliable and robust interface between sensitive logic and DC relay coils. |
| 文件： | 总9页 (文件大小：510K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN61D8L/LVT
Product Summary
Features and Benefits
Provides a more reliable and robust interface between sensitive
logic and DC relay coils.
ID max
V(BR)DSS
RDS(ON) max
TA = +25°C
Replaces 3-4 discrete components enabling PCB footprint to be
reduced.
1.8Ω @ VGS = 5V
2.4Ω @ VGS = 3V
60V
470mA
Internal active clamp removes the need for external zener diode.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Description and Applications
Case: SOT23
DMN61D8L/LVT provides a single component solution for switching
inductive loads such as relays, solenoids, and small DC motors in
automotive applications, without the need of a freewheeling diode.
DMN61D8L/LVT accepts logic level inputs, thus allowing it to be
driven by logic gates, inverters, and microcontrollers. It is ideally
suited for doors, windows, and antenna relay coils.
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Annealed over Alloy 42 Leadframe.
(Lead-Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (Approximate)
Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
ESD protected
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.013 grams (Approximate)
SOT-23
D
S
G
Equivalent Circuit
TSOT26
Top View
Top View
Internal Schematic
Ordering Information (Note 4)
Part Number
DMN61D8L-7
Case
Packaging
SOT23
SOT23
3,000/Tape & Reel
10,000/Tape & Reel
3,000/Tape & Reel
10,000/Tape & Reel
DMN61D8L-13
DMN61D8LVT-7
DMN61D8LVT-13
TSOT26
TSOT26
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
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© Diodes Incorporated
DMN61D8L/LVT
Document number: DS37630 Rev. 3 - 2
DMN61D8L/LVT
Marking Information
1D8 YM
Y M 8 D 1
1D8 = Product Type Marking Code
YM = Date Code Marking
1D8
Y or Y̅ = Year (ex: C= 2015)
M = Month (ex: 9 = September)
SOT23
TSOT26
Date Code Key
Year
2014
2015
2016
2017
2018
2019
2020
Code
B
C
D
E
F
G
H
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
Gate-Source Voltage
60
V
V
VDSS
VGSS
±12
Steady
State
470
370
TA = +25°C
TA = +70°C
Continuous Drain Current (Note 6) SOT23
Continuous Drain Current (Note 6) TSOT26
mA
ID
Steady
State
630
500
TA = +25°C
TA = +70°C
mA
A
ID
IS
Maximum Continuous Body Diode Forward Current (Note 6)
Single Pulse Drain-to-Source Avalanche Energy
0.5
200
20
EZ
mJ
W
(for relay coils/inductive loads of 80Ω or higher) (TJ initial = +85°C)
Peak Power Dissipation, Drain-to-Source (non-repetitive current square
pulse 1.0 ms duration) (TJ initial = +85°C)
PPK
Load Dump Pulse, Drain-to-Source, RSOURCE = 0.5Ω, T = 300 ms)
(for relay coils/inductive loads of 80Ω or higher) (TJ Initial = +85°C)
ELD1
60
V
V
Inductive Switching Transient 1, Drain-to-Source
(Waveform: RSOURCE = 10Ω, T = 2.0 ms)
ELD2
100
(for relay coils/inductive loads of 80Ω or higher) (TJ Initial = +85°C)
Inductive Switching Transient 2, Drain-to-Source
(Waveform: RSOURCE = 4.0Ω, T = 50 µs)
(for relay coils/inductive loads of 80Ω or higher) (TJ Initial = +85°C)
ELD3
300
-14
V
V
Reverse Battery, 10 Minutes (Drain-to-Source)
(for relay coils/inductive loads of 80Ω or higher)
Rev−Bat
Dual Voltage Jump Start, 10 Minutes (Drain-to-Source)
ESD Human Body Model (HBM)
Dual−Volt
28
V
V
ESD
4,000
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© Diodes Incorporated
DMN61D8L/LVT
Document number: DS37630 Rev. 3 - 2
DMN61D8L/LVT
Thermal Characteristics (SOT23) (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
PD
Value
Units
mW
Total Power Dissipation (Note 5)
390
321
Steady State
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
mW
RθJA
610
PD
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
208
°C/W
°C
RθJA
-55 to +150
TJ, TSTG
Thermal Characteristics (TSOT26) (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
PD
Value
820
Units
mW
Total Power Dissipation (Note 5)
Steady State
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
154
°C/W
mW
RθJA
1090
PD
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
116
°C/W
°C
RθJA
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
60
V
BVDSS
IDSS
VGS = 0V, ID = 10mA
VDS = 60V, VGS = 0V
VDS = 12V, VGS = 0V
50
0.5
Zero Gate Voltage Drain Current
Gate-Source Leakage
µA
VGS = ±5V, VDS = 0V
VGS = ±3V, VDS = 0V
±90
±60
µA
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
1.3
2.0
V
VGS(th)
VDS = VGS, ID = 1mA
VGS =5V, ID = 0.15A
VGS = 3V, ID = 0.15A
VDS =12V, ID = 0.15A
VGS = 0V, IS = 0.15A
1.1
1.4
1.8
2.4
Static Drain-Source On-Resistance
Ω
RDS(ON)
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
80
ms
V
|Yfs|
VSD
1.2
12.9
17
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
Ciss
Coss
Crss
Qg
VDS = 12V, VGS = 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
0.84
0.74
0.19
0.16
131
301
582
440
VGS = 5V, VDS = 12V,
ID =150mA
Gate-Source Charge
Qgs
Qgd
tD(on)
tr
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
VDD = 12V, VGS = 5V.
Turn-Off Delay Time
tD(off)
tf
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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© Diodes Incorporated
DMN61D8L/LVT
Document number: DS37630 Rev. 3 - 2
DMN61D8L/LVT
1
1
V
= 10V
GS
V
= 3.0V
GS
V
V
= 5.0V
DS
= 4.0V
GS
V
= 4.5V
GS
0.8
0.8
V
= 5.0V
GS
0.6
0.4
0.2
0
0.6
0.4
V
= 2.5V
GS
T
= 150°C
A
T
A
= 125°C
T
= 85°C
A
0.2
0
T
= 25°C
A
V
= 2.0V
= 1.8V
GS
T
= -55°C
A
V
GS
1.5
3.5
1
2
2.5
3
0
1
2
3
4
5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
2
1.8
1.6
1.4
5
4
3
V
= 3V
GS
V
= 5V
1.2
1
GS
I
= 150mA
D
2
0.8
1
0
0.6
0.4
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
0
2
4
6
8
10
12
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristic
3
2
V
= 5V
GS
1.8
1.6
1.4
1.2
V
= 5V
2.5
2
GS
= 150mA
I
T
= 150°C
= 125°C
D
A
T
A
V
= 3V
GS
= 150mA
I
D
T
= 85°C
= 25°C
A
1.5
1
T
A
1
T
= -55°C
A
0.5
0
0.8
0.6
0
0.2
0.4
0.6
0.8
1
100 125
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
-50 -25
0
25
50
75
150
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
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© Diodes Incorporated
DMN61D8L/LVT
Document number: DS37630 Rev. 3 - 2
DMN61D8L/LVT
3
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
2.5
I
= 1mA
D
V
= 3V
GS
2
1.5
1
I
= 150mA
D
I
= 250µA
D
V
= 5V
GS
I
= 150mA
D
0.5
0
1
0.9
-50 -25
25
0
50
75 100 125 150
-50 -25
TJ, JUNCTION TEMPERATURE (C)
Figure 7 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
1
100
f = 1MHz
T
= 150°C
0.8
A
C
iss
T
= 125°C
A
10
C
oss
T
= 85°C
= 25°C
0.6
A
T
0.4
0.2
0
A
1
C
rss
T
= -55°C
A
0
0
5
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
15
20
25
30
35
40
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
7
6
5
4
3
2
1
0
V
I
= 12V
DS
= 150mA
D
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
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© Diodes Incorporated
DMN61D8L/LVT
Document number: DS37630 Rev. 3 - 2
DMN61D8L/LVT
SOT23:
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1 D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
Rthja(t) = r(t) * R
thja
RJA = 323°C/W
Duty Cycle, D = t1/ t2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10 100
1000
t1, PULSE DURATION TIME (sec)
Figure 12 Transient Thermal Resistance
TSOT26:
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
Rthja(t) = r(t) * R
thja
RJA = 154°C/W
Duty Cycle, D = t1/ t2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
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© Diodes Incorporated
DMN61D8L/LVT
Document number: DS37630 Rev. 3 - 2
DMN61D8L/LVT
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
SOT23
All 7°
H
GAUGE PLANE
SOT23
0.25
J
Dim
A
B
C
D
F
G
H
J
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.40
1.30
2.40
K
K1
a
M
A
L
L1
2.05
3.00
1.83
2.90
0.05
0.013 0.10
K
K1
L
0.890 1.00 0.975
0.903 1.10 1.025
C
B
0.45
0.25
0.61
0.55
0.55
0.40
L1
M
0.085 0.150 0.110
8°
D
G
F
All Dimensions in mm
TSOT26
D
TSOT26
Dim Min Max Typ
e1
A
A1
A2
D
E
E1
b
c
e
e1
L
L2
θ
1.00
0.01 0.10
0.84 0.90
2.90
2.80
1.60
0.95
1.90
E
E1
L2
c
0.30 0.45
0.12 0.20
L
4x1
e
6x b
0.30 0.50
A2
A1
A
0.25
4°
0°
4°
8°
12°
θ1
All Dimensions in mm
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© Diodes Incorporated
DMN61D8L/LVT
Document number: DS37630 Rev. 3 - 2
DMN61D8L/LVT
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT23
Y
Dimensions Value (in mm)
Z
Z
X
Y
C
E
2.9
0.8
0.9
2.0
1.35
C
E
X
TSOT26
C
C
Dimensions Value (in mm)
C
X
Y
0.950
0.700
1.000
3.199
Y1
Y1
Y (6x)
X (6x)
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© Diodes Incorporated
DMN61D8L/LVT
Document number: DS37630 Rev. 3 - 2
DMN61D8L/LVT
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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© Diodes Incorporated
DMN61D8L/LVT
Document number: DS37630 Rev. 3 - 2
相关型号：
DMN61D8LVT-7
Provides a more reliable and robust interface between sensitive logic and DC relay coils.
DIODES
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