DMN6040SSD_16 [DIODES]
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | DMN6040SSD_16 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总6页 (文件大小：254K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN6040SSD
60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
•
•
•
•
•
•
Low Input Capacitance
Low On-Resistance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
ID
V(BR)DSS
RDS(on) max
TA = +25°C
5.0A
4.4A
40mΩ @ VGS = 10V
55mΩ @ VGS = 4.5V
60V
Mechanical Data
Description and Applications
•
•
Case: SO-8
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(on)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
•
•
•
•
•
•
DC-DC Converters
Power Management Functions
Backlighting
•
Weight: 0.074 grams (approximate)
S1
G1
S2
D1
D1
D2
D2
D1
S1
D2
S2
G1
G2
G2
Top View
Top View
Pin Configuration
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN6040SSD-13
Case
SO-8
Packaging
2,500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
8
5
= Manufacturer’s Marking
N6040SD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 14= 2014)
WW = Week (01 - 53)
N 6040 SD
YY WW
1
4
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© Diodes Incorporated
DMN6040SSD
Document number: DS35673 Rev. 4 - 2
DMN6040SSD
Maximum Ratings (@TA = +25°C unless otherwise specified)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
60
Units
V
V
Gate-Source Voltage
±20
VGSS
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
5.0
4.1
A
A
ID
ID
Continuous Drain Current (Note 6) VGS = 10V
6.6
5.3
t<10s
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Note 7) L = 0.1mH
2.5
30
A
A
IS
IDM
IAS
14.2
10
A
Avalanche Energy (Note 7) L = 0.1mH
mJ
EAS
Thermal Characteristics (@TA = +25°C unless otherwise specified)
Characteristic
Symbol
PD
Value
1.3
Units
TA = +25°C
Total Power Dissipation (Note 5)
W
0.8
102
61
1.7
1.1
75
TA = +70°C
Steady state
t<10s
TA = +25°C
TA = +70°C
Steady state
t<10s
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
Rθ
JA
PD
Thermal Resistance, Junction to Ambient (Note 6)
Rθ
JA
50
14.5
°C/W
°C
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Rθ
JC
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = 25°C unless otherwise specified)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
60
V
100
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
VGS = ±20V, VDS = 0V
nA
nA
±100
IGSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
1
3
V
30
VGS(th)
VDS = VGS, ID = 250µA
VGS = 10V, ID = 4.5A
VGS = 4.5V, ID = 3.5A
VDS = 10V, ID = 4.3A
VGS = 0V, IS = 1A
40
55
Static Drain-Source On-Resistance
mΩ
RDS (ON)
35
Forward Transfer Admittance
Diode Forward Voltage
4.5
0.7
S
V
|Yfs|
VSD
1.2
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
1287
57
Ciss
Coss
Crss
RG
Qg
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
44
1.2
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
22.4
10.4
4.9
Total Gate Charge (VGS = 10V)
Total Gate Charge (VGS = 4.5V)
Gate-Source Charge
Qg
nC
nS
VDS = 30V, ID = 4.3A
Qgs
Qgd
tD(on)
tr
Gate-Drain Charge
3.0
Turn-On Delay Time
6.6
Turn-On Rise Time
8.1
VGS = 10V, VDD = 30V, RG = 6Ω,
ID = 4.3A
Turn-Off Delay Time
20.1
4.0
tD(off)
tf
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
18
nS
nC
trr
IS = 4.3A, dI/dt = 100A/μs
11.9
Qrr
IS = 4.3A, dI/dt = 100A/µs
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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© Diodes Incorporated
DMN6040SSD
Document number: DS35673 Rev. 4 - 2
DMN6040SSD
20
16
20
16
V
= 5.0V
DS
12
8
12
8
T
= 150°C
A
T
= 125°C
A
T
= 85°C
A
4
0
4
0
T
= 25°C
A
T
= -55°C
A
0
1
2
3
4
5
0
0.5
1.0
1.5
2.0
2.5
3.0
VGS, GATE-SOURCE VOLTAGE
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig.2 Typical Transfer Characteristics
Fig.1 Typical Output Characteristic
0.10
0.09
0.10
0.08
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.06
0.04
I
= 3.5A
I
= 4.5A
D
D
V
V
= 4.5V
= 10V
GS
GS
0.02
0
0.01
0
0
1
2
3
4
5
6
7
8
9
10
0
4
8
12
16
20
ID, DRAIN-SOURCE CURRENT
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
Fig. 4 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.10
0.09
2.4
2.2
V
= 4.5V
GS
V
= 10V
GS
= 10A
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
T
= 150°C
= 125°C
I
0.08
0.07
0.06
0.05
0.04
0.03
0.02
A
D
T
A
V
= 4.5V
= 5A
GS
I
D
T
= 85°C
A
A
T
= 25°C
T
= -55°C
A
0.01
0
0.2
0
0
4
8
12
16
20
50 -25
0
25
50
75 100 125 150
ID, DRAIN CURRENT
TJ, JUNCTION TEMPERATURE (°C)
Fig. 5 Typical On-Resistance vs.
Drain Current and Temperature
Fig. 6 On-Resistance Variation with Temperature
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© Diodes Incorporated
DMN6040SSD
Document number: DS35673 Rev. 4 - 2
DMN6040SSD
4.0
3.5
0.10
0.08
3.0
2.5
2.0
1.5
1.0
V
= 4.5V
GS
0.06
0.04
I
= 500mA
D
I
= 1mA
D
I
= 250µA
D
V
= 2.5V
GS
I
= 200mA
D
0.02
0
0.5
0
-50 -25
0
25
50 75 100 125 150
- 50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Fig. 8 Gate Threshold Variation vs. Ambient Temperature
Fig. 7 On-Resistance Variation with Temperature
20
16
C
iss
T
= 25°C
A
12
8
4
0
C
oss
C
rss
f = 1MHz
0
5
10
15
20
25
30
0
0.2
0.4
0.6
0.8
1.0
1.2
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Junction Capacitance
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig.9 Diode Forward Voltage vs. Current
100
V = 30V
DS
I
= 4.3A
D
10
1
DC
P
= 10s
W
P
= 1s
P
W
0.1
0.01
= 100ms
W
TJ(m ax) = 150°C
TA = 25°C
P
= 10ms
W
P
= 1ms
W
VGS = 10V
P
= 100µs
W
Single Pulse
DUT on 1 * MRP Board
0.001
0
5
10
15
20
25
100
0.1
1
10
Qg, TOTAL GATE CHARGE (nC)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
Fig. 11 Gate Charge
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© Diodes Incorporated
DMN6040SSD
Document number: DS35673 Rev. 4 - 2
DMN6040SSD
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
Rthja(t)=r(t) * Rthja
D = 0.005
Rthja=100C/W
Duty Cycle, D=t1 / t2
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIMES (sec)
Figure 13 Transient Thermal Resistance
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
SO-8
Dim
Min
-
0.10
1.30
0.15
0.3
Max
1.75
0.20
1.50
0.25
0.5
E1
E
Gauge Plane
Seating Plane
A
A1
A2
A3
b
A1
L
Detail ‘A’
D
E
E1
e
4.85
5.90
3.85
4.95
6.10
3.95
7°~9°
h
°
45
Detail ‘A’
A2
A3
A
1.27 Typ
h
L
θ
-
0.35
0.82
8°
b
e
0.62
0°
D
All Dimensions in mm
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© Diodes Incorporated
DMN6040SSD
Document number: DS35673 Rev. 4 - 2
DMN6040SSD
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.
X
Dimensions Value (in mm)
X
Y
C1
C2
0.60
1.55
5.4
C1
1.27
C2
Y
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
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Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
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© Diodes Incorporated
DMN6040SSD
Document number: DS35673 Rev. 4 - 2
相关型号：
DMN6040UFDE-13
Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
DIODES
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