DMN3016LSS_15 [DIODES]
30V N-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | DMN3016LSS_15 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 30V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总6页 (文件大小：298K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN3016LSS
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
•
•
•
•
•
•
Low On-Resistance
ID max
TA = 25°C
10.3 A
V(BR)DSS
RDS(ON) max
Low Input Capacitance
12mΩ @ VGS = 10V
16mΩ @ VGS = 4.5V
Fast Switching Speed
30V
9.3 A
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
•
•
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish Matte Tin annealed over Copper leadframe.
Applications
•
•
•
•
•
•
Backlighting
Power Management Functions
DC-DC Converters
e3
Solderable per MIL-STD-202, Method 208
Weight: 0.076 grams (approximate)
•
D
SO-8
S
S
S
G
D
D
Pin1
G
D
D
S
Top View
Top View
Equivalent Circuit
Pin Configuration
Ordering Information (Note 4)
Part Number
Case
Packaging
DMN3016LSS-13
SO-8
2500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
8
5
= Manufacturer’s Marking
N3016LS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 14 = 2014)
N3016LS
YY WW
N3016LS
YY
WW
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
1
4
1
4
Chengdu A/T Site
Shanghai A/T Site
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July 2014
© Diodes Incorporated
DMN3016LSS
Document number: DS36937 Rev.2 - 2
DMN3016LSS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
30
Units
V
V
Gate-Source Voltage
±20
VGSS
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
10.3
8.3
A
A
A
A
ID
ID
ID
ID
Continuous Drain Current (Note 6) VGS = 10V
Continuous Drain Current (Note 6) VGS = 4.5V
13.4
10.6
t<10s
Steady
State
9.3
7.3
12.0
9.5
t<10s
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Note 7) L = 0.1mH
2.5
80
22
25
A
A
IS
IDM
IAS
EAS
A
Avalanche Energy (Note 7) L = 0.1mH
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
PD
Value
1.5
82
48
2.0
60
Units
W
°C/W
°C/W
W
°C/W
°C/W
°C/W
Total Power Dissipation (Note 5)
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
t<10s
Rθ
JA
Total Power Dissipation (Note 6)
PD
Steady State
Thermal Resistance, Junction to Ambient (Note 6)
Rθ
JA
t<10s
37
6.4
Thermal Resistance, Junction to Case
Rθ
JC
Operating and Storage Temperature Range
-55 to 150
°C
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
30
—
—
—
—
—
—
1
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
μA
nA
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
±100
IGSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
1.3
—
—
—
—
8
2.5
12
V
mΩ
V
VGS(th)
RDS(ON)
VSD
VDS = VGS, ID = 250μA
VGS = 10V, ID = 12A
VGS = 4.5V, ID = 10A
VGS = 0V, IS = 1A
Static Drain-Source On-Resistance
12
0.7
16
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1415
119
82
—
—
—
3.2
—
—
—
—
—
—
—
—
—
—
Ciss
Coss
Crss
Rg
VDS = 15V, VGS = 0V,
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate resistance
2.6
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
11.3
25.1
3.5
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Qg
Qg
nC
ns
VDS = 15V, ID = 12A
Qgs
Qgd
tD(on)
tr
Gate-Drain Charge
3.6
Turn-On Delay Time
4.8
Turn-On Rise Time
16.5
26.1
5.6
VDD = 15V, VGS = 10V,
RL = 1.25Ω, RG = 3Ω,
Turn-Off Delay Time
tD(off)
tf
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
8.5
ns
Trr
IF = 12A, di/dt = 500A/µs
7.0
nC
Qrr
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. UIS in production with L = 0.1mH, starting TA = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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July 2014
© Diodes Incorporated
DMN3016LSS
Document number: DS36937 Rev.2 - 2
DMN3016LSS
30
25
20
15
10
5
30
25
20
15
10
5
V
= 10V
V
= 3.0V
GS
GS
V
= 5.0V
DS
V
= 4.5V
GS
= 4.0V
V
GS
V
= 3.5V
GS
T
= 85°C
T
= 150°C
A
A
V
= 2.5V
GS
T = 25°C
A
T
= 125°C
A
T
= -55°C
A
V
= 2.2V
GS
0
0
0
0.5
1
1.5
2
0
0.5
1
1.5
2
2.5
3
3.5
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
0.03
0.02
0.01
0
0.03
0.025
0.02
0.015
0.01
0.005
0
V
= 4.5V
GS
T
= 150°C
A
T
= 125°C
= 25°C
A
T
= 85°C
A
V
= 4.5V
T
GS
A
T
= -55°C
A
V
= 10V
GS
0
5
10
15
20
25
30
0
5
10
15
20
25
30
ID, DRAIN CURRENT (A)
ID, DRAIN-SOURCE CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
1.8
1.6
1.4
1.2
0.024
0.02
V
= 4.5V
= 5A
GS
V
= 4.5V
= 5A
GS
I
D
I
D
0.016
0.012
0.008
0.004
0
V
= 10V
= 10A
GS
V
= 10V
GS
= 10A
I
D
I
D
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6 On-Resistance Variation with Temperature
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5 On-Resistance Variation with Temperature
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© Diodes Incorporated
DMN3016LSS
Document number: DS36937 Rev.2 - 2
DMN3016LSS
3
2.5
2
30
25
20
15
10
5
I
= 1mA
D
1.5
1
I
= 250µA
D
T
= 25°C
A
0.5
0
0
-50 -25
0
25
50
75 100 125 150
0
0.2
0.4
0.6
0.8
1
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 8 Diode Forward Voltage vs. Current
Figure 7 Gate Threshold Variation vs. Ambient Temperature
10000
10000
1000
T
= 150°C
f = 1MHz
A
1000
C
iss
T
= 125°C
A
100
10
1
T
= 85°C
A
C
oss
100
10
C
rss
T
= 25°C
A
0.1
0
10
20
30
0
2
4
6
8
10 12 14 16 18 20
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Drain-Source Leakage Current vs. Voltage
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
10
9
100
10
R
DS(on)
Limited
8
7
DC
V
I
= 15V
DS
= 12A
6
5
4
3
2
1
0
P
= 10s
W
D
P
= 1s
W
1
P
= 100ms
W
P
= 10ms
W
P
= 1ms
W
0.1
P
= 100µs
W
T
T
= 150°C
J(max)
= 25°C
A
V
= 10V
GS
Single Pulse
DUT on 1 * MRP Board
0.01
0
5
10
15
20
25
0.1
1
10
100
Qg, TOTAL GATE CHARGE (nC)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
Figure 11 Gate Charge
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© Diodes Incorporated
DMN3016LSS
Document number: DS36937 Rev.2 - 2
DMN3016LSS
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
0.01
D = 0.005
RθJA(t) = r(t) * RθJA
RθJA = 82°C/W
Duty Cycle, D = t1/ t2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
SO-8
Min
-
0.10
1.30
0.15
0.3
Dim
Max
A
A1
A2
A3
b
1.75
0.20
1.50
0.25
0.5
E1
E
Gauge Plane
Seating Plane
A1
L
D
E
E1
e
h
L
θ
4.85
5.90
3.85
1.27 Typ
-
0.62
0°
4.95
6.10
3.95
Detail ‘A’
7°~9°
h
°
45
0.35
0.82
8°
Detail ‘A’
A2
A3
A
All Dimensions in mm
b
e
D
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
Dimensions Value (in mm)
X
Y
C1
C2
0.60
1.55
5.4
C1
1.27
C2
Y
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© Diodes Incorporated
DMN3016LSS
Document number: DS36937 Rev.2 - 2
DMN3016LSS
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
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© Diodes Incorporated
DMN3016LSS
Document number: DS36937 Rev.2 - 2
相关型号：
DMN3018SSS-13
Small Signal Field-Effect Transistor, 5.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
DIODES
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