DMG6301UDW-7 [DIODES]
Small Signal Field-Effect Transistor;
| 型号： | DMG6301UDW-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Field-Effect Transistor |
| 文件： | 总6页 (文件大小：261K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMG6301UDW
25V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
•
•
•
•
•
•
•
•
•
Low On-Resistance
ID
V(BR)DSS
RDS(ON)
TA = +25°C
0.24A
0.22A
Low Gate Threshold Voltage
4Ω @ VGS = 4.5V
5Ω @ VGS = 2.7V
Low Input Capacitance
25V
Fast Switching Speed
Small Surface Mount Package
ESD Protected Gate (>6kV Human Body Model)
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET has been designed to minimize the
on-state resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
•
•
Case: SOT363
Applications
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
•
•
•
•
DC-DC Converters
Power Management Functions
•
•
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc
•
•
Weight: 0.006 grams (approximate)
D1
D2
S2
D2
G1
S1
SOT363
G2
G1
Gate Protection
Diode
Gate Protection
Diode
S2
G2
D1
S1
ESD HBM >6kV
Top View
Top View
Internal Schematic
Equivalent circuit
Ordering Information (Note 4)
Part Number
DMG6301UDW-7
DMG6301UDW-13
Compliance
Standard
Standard
Case
SOT363
SOT363
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
N5W= Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Date Code Key
Year
2012
2013
2014
2015
2016
2017
2018
Code
Z
A
B
C
D
E
F
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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February 2014
© Diodes Incorporated
DMG6301UDW
Document number: DS36288 Rev. 1 - 2
DMG6301UDW
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
25
Units
V
V
Gate-Source Voltage
8
VGSS
T
A = +25°C
0.24
0.19
A
Continuous Drain Current, VGS = 4.5V (Note 6)
ID
TA = +70°C
T
A = +25°C
0.22
0.17
A
A
Continuous Drain Current, VGS = 2.7V (Note 6)
ID
TA = +70°C
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
1.5
IDM
Thermal Characteristics
Characteristic
Symbol
Value
0.3
Units
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 6)
Total Power Dissipation
W
PD
0.37
409
334
Thermal Resistance, Junction to Ambient
RΘJA
RΘJC
°C/W
Thermal Resistance, Junction to Case
137
Operating and Storage Temperature Range
-55 to +150
°C
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
—
—
—
25
—
—
—
1
V
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 20V, VGS = 0V
VGS = 8V, VDS = 0V
µA
nA
100
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.65
—
0.85
3.8
3.1
1
1.5
4
V
ꢀ
ꢀ
S
V
VGS(th)
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 0.4A
Static Drain-Source On-Resistance
RDS(ON)
—
5
V
GS = 2.7V, ID = 0.2A
Forward Transconductance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
|Yfs|
VSD
⎯
⎯
1.2
VDS = 5V, ID =0.4A
—
0.76
VDS = VGS, ID = 0.25A
—
—
—
—
—
—
—
—
—
—
27.9
6.1
—
—
—
—
—
—
—
—
—
—
Ciss
Coss
Crss
Qg
V
DS = 10V, VGS = 0V,
Output Capacitance
pF
nC
f = 1MHz
2
Reverse Transfer Capacitance
Total Gate Charge
0.36
0.06
0.04
2.9
V
GS = 4.5V, VDS = 5V,
Gate-Source Charge
Qgs
Qgd
tD(on)
tr
ID = 0.2A
Gate-Drain Charge
Turn-On Delay Time
1.8
Turn-On Rise Time
V
GS = 4.5V, VDS = 6V
nS
6.6
ID = 0.5A, RG = 50ꢀ
Turn-Off Delay Time
tD(off)
tf
2.3
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
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February 2014
© Diodes Incorporated
DMG6301UDW
Document number: DS36288 Rev. 1 - 2
DMG6301UDW
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
V
= 8.0V
V
= 2.5V
GS
GS
V
= 5.0V
DS
V
= 4.5V
= 4.0V
V
= 2.7V
GS
GS
GS
V
V
= 2.0V
GS
V
= 3.0V
GS
V
= 1.5V
GS
T
= 150°C
A
T
A
= 125°C
T
= 25°C
A
V
= 1.2V
T
= 85°C
GS
A
T
= -55°C
A
0
1
2
3
0
0.5
1
1.5
2
2.5
3
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
1.5
1.2
0.9
0.6
0.3
0
3
2
1
0
I
= 200mA
D
V
= 2.7V
GS
V
= 4.5V
GS
I
= 50mA
D
0
1
2
3
4
5
6
7
8
0
0.2
0.4
0.6
0.8
1
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
2
1.8
1.6
1.4
1.2
1
1.8
1.6
1.4
1.2
1
V
= 4.5V
GS
V
= 8V
GS
I
= 800mA
D
T
= 150°C
A
T
= 125°C
A
V
= 4.5V
GS
T
= 85°C
I
= 500mA
A
D
T
= 25°C
A
0.8
0.6
0.4
0.2
0
T
= -55°C
A
0.8
0.6
-50 -25
TJ, JUNCTION TEMPERATURE (
Figure 6 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
0
0.2
0.4
0.6
0.8
1
ID, DRAIN CURRENT (A)
°
C)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
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February 2014
© Diodes Incorporated
DMG6301UDW
Document number: DS36288 Rev. 1 - 2
DMG6301UDW
1.5
1.2
0.9
0.6
0.3
1.2
1.1
1
V
= 4.5V
GS
I
= 500mA
D
I
= 1mA
D
0.9
0.8
0.7
0.6
0.5
0.4
V
= 8V
GS
I
= 250µA
D
I
= 800mA
D
-50 -25
0
25
50
75 100 125 150
C)
-50 -25
TJ, JUNCTION TEMPERATURE (
Figure 7 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (
°
°
C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
1
0.8
0.6
0.4
0.2
0
100
f = 1MHz
C
iss
T
= 150°C
A
10
T
= 125°C
A
C
oss
T
= 25°C
A
T
= 85°C
A
C
rss
T
= -55°C
A
1
0
5
10
15
20
25
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
8
6
4
2
0
V
I
= 5V
DS
= 200mA
D
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
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February 2014
© Diodes Incorporated
DMG6301UDW
Document number: DS36288 Rev. 1 - 2
DMG6301UDW
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
SOT363
Min
0.10
1.15
2.00
Dim
Max
0.30
1.35
2.20
B C
A
B
C
D
F
H
J
K
L
0.65 Typ
H
0.40
1.80
0
0.90
0.25
0.10
0°
0.45
2.20
0.10
1.00
0.40
0.22
8°
K
J
M
L
D
F
M
α
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C2
C2
Dimensions Value (in mm)
Z
G
2.5
1.3
X
Y
0.42
0.6
C1
G
Y
Z
C1
C2
1.9
0.65
X
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February 2014
© Diodes Incorporated
DMG6301UDW
Document number: DS36288 Rev. 1 - 2
DMG6301UDW
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
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February 2014
© Diodes Incorporated
DMG6301UDW
Document number: DS36288 Rev. 1 - 2
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