DDC122LU-7-F [DIODES]
NPN PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR; NPN预偏置小信号SOT -363双表面贴装晶体管
| 型号： | DDC122LU-7-F |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | NPN PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR |
| 文件： | 总3页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DDC (LO-R1) U
NPN PRE-BIASED SMALL SIGNAL SOT-363
DUAL SURFACE MOUNT TRANSISTOR
Features
·
·
·
·
Epitaxial Planar Die Construction
A
SOT-363
Complementary PNP Types Available (DDA)
Built-In Biasing Resistors
Dim
A
Min
0.10
1.15
2.00
Max
0.30
1.35
2.20
M Y
N X X
C
B
Lead Free/RoHS Compliant (Note 3)
B
NXX YM
C
Mechanical Data
·
G
H
D
0.65 Nominal
Case: SOT-363
F
0.30
1.80
¾
0.40
2.20
0.10
1.00
0.40
0.25
8°
·
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
K
J
H
M
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
J
Terminals: Finish - Matte Tin Solderable per MIL-STD-202,
Method 208
K
0.90
0.25
0.10
0°
L
D
F
L
·
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe)
M
·
·
Terminal Connections: See Diagram
a
Marking: Date Code and Marking Code (See Diagrams &
Page 2)
All Dimensions in mm
·
·
Ordering Information (See Page 2)
Weight: 0.006 grams (approximate)
6
5
4
3
6
1
4
5
R1
R1
R2
P/N
DDC122LU
R1 (NOM) R2 (NOM) MARKING
R2
R1
R1
0.22K
0.47K
0.22K
0.47K
10K
10K
N81
N82
N83
N84
1
2
2
3
DDC142JU
DDC122TU
DDC142TU
OPEN
OPEN
R1, R2
R1 Only
SCHEMATIC DIAGRAM
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
Value
Unit
VCC
Supply Voltage (6) to (1) and (3) to (4)
Input Voltage (2) to (1) and (5) to (4)
50
V
DDC122LU
DDC142JU
-5 to +6
-5 to +6
VIN
V
V
Input Voltage (1) to (2) and (4) to (5)
VEBO (MAX)
DDC122TU
DDC142TU
5
IC
Pd
Output Current
All
100
200
625
mA
mW
Power Dissipation (Note 1)
RqJA
Thermal Resistance, Junction to Ambient Air (Note 1)
°C/W
Note: 1. 150mW per element must not be exceeded.
2. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
3. No purposefully added lead.
DS30424 Rev. 4 - 2
1 of 3
DDC (LO-R1) U
www.diodes.com
ã Diodes Incorporated
@ TA = 25°C unless otherwise specified
Electrical Characteristics
R1, R2 Types
Characteristic
Symbol
Min
Typ
Max Unit
Test Condition
VCC = 5V, IO = 100mA
VO = 0.3V, IO = 20mA
DDC122LU
0.3
0.3
Vl(off)
¾
¾
V
DDC142JU
Input Voltage
2.0
2.0
DDC122LU
DDC142JU
Vl(on)
VO(on)
Il
¾
¾
¾
¾
¾
¾
¾
¾
¾
V
V
V
O = 0.3V, IO = 20mA
IO/Il = 5mA/0.25mA
Output Voltage
Input Current
0.3V
DDC122LU
DDC142JU
28
13
VI = 5V
mA
mA
¾
VCC = 50V, VI = 0V
VO = 5V, IO = 10mA
IO(off)
Gl
Output Current
DC Current Gain
0.5
DDC122LU
DDC142JU
56
56
¾
VCE = 10V, IE = 5mA,
f = 100MHz
fT
Gain-Bandwidth Product*
¾
200
¾
MHz
* Transistor - For Reference Only
Electrical Characteristics
@ TA = 25°C unless otherwise specified
R1-Only
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Symbol
BVCBO
BVCEO
Min
50
Typ
¾
Max Unit
Test Condition
IC = 50mA
IC = 1mA
IE = 50mA
¾
¾
V
V
40
¾
Emitter-Base Breakdown Voltage DDC122TU
DDC142TU
BVEBO
ICBO
¾
5
¾
¾
¾
¾
V
mA
mA
V
I
E = 50mA
VCB = 50V
Collector Cutoff Current
¾
0.5
DDC122TU
Emitter Cutoff Current
¾
¾
0.5
0.5
VEB = 4V
IEBO
DDC142TU
IC = 5mA, IB = 0.25mA
IC = 1mA, VCE = 5V
VCE(sat)
hFE
Collector-Emitter Saturation Voltage
¾
0.3
DDC122TU
DC Current Transfer Ratio
DDC142TU
100
100
250
250
600
600
¾
VCE = 10V, IE = -5mA,
f = 100MHz
fT
Gain-Bandwidth Product*
¾
200
¾
MHz
* Transistor - For Reference Only
(Note 4)
Ordering Information
Device
Packaging
SOT-363
SOT-363
SOT-363
SOT-363
Shipping
DDC122LU-7-F
DDC142JU-7-F
DDC122TU-7-F
DDC142TU-7-F
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
Notes: 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
NXX = Product Type Marking Code
M Y
N X X
See Sheet 1 Diagrams
YM = Date Code Marking
Y = Year ex: T = 2006
NXX YM
M = Month ex: 9 = September
Date Code Key
Year
2002
2003
2004
2005
2006
2007
2008
2009
2010
2011
2012
Code
N
P
R
S
T
U
V
W
X
Y
Z
Month
Code
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30424 Rev. 4 - 2
2 of 3
DDC (LO-R1) U
www.diodes.com
250
200
150
100
50
0
-50
0
50
100
150
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve
(150mW per element must not be exceeded).
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further
notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither
does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will
agreetoholdDiodesIncorporatedandallthecompanieswhoseproductsarerepresentedonourwebsite,harmlessagainstalldamages.
LIFE SUPPORT
DiodesIncorporatedproductsarenotauthorizedforuseascriticalcomponentsinlifesupportdevicesorsystemswithouttheexpressedwrittenapprovalofthe
PresidentofDiodesIncorporated.
DS30424 Rev. 4 - 2
3 of 3
DDC (LO-R1) U
www.diodes.com
相关型号：
DDC123JK-13
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, PLASTIC PACKAGE-6
DIODES
DDC123JK-7-F
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, LEAD FREE, PLASTIC PACKAGE-6
DIODES
©2020 ICPDF网 联系我们和版权申明