DDAXXXXU [DIODES]
PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR; PNP预偏置小信号SOT -363双表面贴装晶体管![DDAXXXXU](http://pdffile.icpdf.com/pdf1/p00121/img/icpdf/DDAXXXXU_662995_icpdf.jpg)
型号: | DDAXXXXU |
厂家: | ![]() |
描述: | PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR |
文件: | 总2页 (文件大小:67K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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DDA (xxxx) U
PNP PRE-BIASED SMALL SIGNAL SOT-363
DUAL SURFACE MOUNT TRANSISTOR
Features
DEVELOPMENT
UNDER
·
·
Epitaxial Planar Die Construction
Complementary NPN Types Available
(DDC)
SOT-363
Min
A
Dim
A
Max
0.30
1.35
2.20
0.10
·
Built-In Biasing Resistors
Y M P X X
B
1.15
C
B
C
2.00
Mechanical Data
PXX YM
D
0.65 Nominal
·
·
·
Case: SOT-363, Molded Plastic
Case material - UL Flammability Rating 94V-0
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (approx.)
E
0.30
1.80
1.80
¾
0.40
2.20
2.20
0.10
1.00
0.40
0.25
H
G
H
K
J
M
J
·
·
K
0.90
0.25
0.10
L
D
F
L
M
All Dimensions in mm
P/N
R1
R2
MARKING
R1
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
DDA143TU
DDA114TU
22K
47K
10K
2.2K
10K
4.7K
10K
22K
47K
47K
47K
10K
-
P17
P20
P14
P06
P13
P07
P12
R2
R1
R2
R1
R1
-
R1, R2
R1 Only
SCHEMATIC DIAGRAM
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
VCC
Value
Unit
Supply Voltage, (3) to (1)
Input Voltage, (2) to (1)
50
V
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
DDA143TU
DDA114TU
+10 to -40
+10 to -40
+6 to -40
+5 to -12
+10 to -40
+5 Vmax
+5 Vmax
VIN
V
Output Current
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
DDA143TU
DDA114TU
-30
-30
-70
IO
-100
-50
-100
-100
mA
I
C (Max)
Pd
Output Current
All
-100
-200
mA
mW
°C
Power Dissipation
Tj, TSTG
Operating and Storage and Temperature Range
-55 to +150
DS30346 Rev. 1 - 1
1 of 2
DDA (xxxx) U
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic (DDA143TU & DDA114TU only) Symbol
Min Typ
Max
¾
Unit
V
Test Condition
IC = -50mA
IC = -1mA
BVCBO
BVCEO
BVEBO
ICBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
-50
-50
-5
¾
¾
¾
¾
¾
¾
V
IE = -50mA
VCB = -50V
VEB = -4V
¾
V
¾
-0.5
-0.5
mA
mA
IEBO
Emitter Cutoff Current
¾
IC/IB = -2.5mA / -0.25mA
IC/IB = -1mA / -0.1mA
DDA143TU
DDA114TU
VCE(sat)
Collector-Emitter Saturation Voltage
¾
¾
-0.3
V
hFE
fT
IC = -1mA, VCE = -5V
DC Current Transfer Ratio
Gain-Bandwidth Product*
100
250
250
600
¾
VCE = -10V, IE = 5mA, f = 100MHz
¾
¾
MHz
Characteristic
Symbol
Min
Typ
Max Unit
Test Condition
DDA124EU
-0.5
-0.5
-0.3
-0.5
-0.5
-1.1
-1.1
--
--
-1.1
DDA144EU
DDA114YU
DDA123JU
DDA114EU
Vl(off)
Vl(on)
VO(on)
VCC = -5V, IO = -100mA
¾
Input Voltage
V
V
V
V
V
V
V
O = -0.3, IO = -5mA
O = -0.3, IO = -2mA
O = -0.3, IO = -1mA
O = -0.3, IO = -5mA
O = -0.3, IO = -10mA
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
-1.9
-1.9
--
--
-1.9
-3.0
-3.0
-1.4
-1.1
-3.0
¾
¾
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
IO/Il = -10mA / -0.5mA
IO/Il = -10mA / -0.5mA
IO/Il = -5mA / -0.25mA
IO/Il = -5mA / -0.25mA
IO/Il = -10mA / -0.5mA
Output Voltage
-0.1
-0.3
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
-0.36
-0.18
VI = -5V
Il
Input Current
¾
¾
¾
¾
¾
-0.88 mA
-3.6
-0.88
VCC = -50V, VI = -0V
VO = -5V, IO = -5mA
IO(off)
Output Current
DC Current Gain
-0.5
mA
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
56
68
68
80
30
V
V
V
V
O = -5V, IO = -5mA
O = -5V, IO = -10mA
O = -5V, IO = -10mA
O = -5V, IO = -5mA
Gl
¾
¾
VCE = -10V, IE = -5mA,
f = 100MHz
fT
Gain-Bandwidth Product*
¾
250
¾
MHz
* Transistor - For Reference Only
DEVELOPMENT
UNDER
DS30346 Rev. 1 - 1
2 of 2
DDA (xxxx) U
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